• The Transactions of the Korean Institute of Power Electronics
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• v.7 no.4
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• pp.346-352
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• 2002

A novel Zero Current Switching(ZCS) Pulse Width Modulation(PWM) boost converter with dual mode for reducing two rectifiers reverse recovery related losses is proposed. The switches of the proposed converter are operating to work alternatively turn-on and turn-off with soft switching condition In the every cycle and the proposed converter reduces the reverse recovery current, which is related switching losses and EMI problems, of the free-wheeling diode$(D_1, D_2)$ by adding the resonant inductor Lr, in series with the switch $S_1$. The switching components$(S_1, S_2, D, D_1)$ in the proposed boost converter are subjected to minimum voltage and current stresses same as those in their PWM counterparts because there are no additional active switches and resonant elements compared with the conventional ZVT PWM $converters^{[2]}$. The operation of the proposed converter, in this paper, is analyzed and to verify the feasibility of the characteristics is built and tested.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.551-554
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• 2000

The stability of $Pr_6$$O_{11}$-based ZnO varistors doped with $Y_2$$O_3$ was investigated under various d.c. stresses. The varistors were sintered at $1350^{\circ}C$ for 1h in the addition range of 0.0 to 4.0 mol% $Y_2$$O_3$. The varistors doped with $Y_2$$O_3$ exhibited much higher nonlinearity than that without $Y_2$$O_3$. In Particular, the varistors containing 0.5 mol% $Y_2$$O_3$ showed very excellent V-I characteristics, which the nonlinear exponent was 51.19 and the leakage current was 1.32 $\mu\textrm{A}$. And these varistors also showed an excellent stability, which the variation rate of the varistor voltage and the nonlinear exponent were -0.80% and -2.17%, respectively, under 4th d.c. stress, such as (0.80 $V_ {1mA}$/$90^{\circ}C$/12h)+(0.85 $V_{1mA}$/$115^{\circ}C$/12h)+(0.90 $V_{1mA}$/$120^{\circ}C$/12h)+(0.95 $V_{1mA}$/$125^{\circ}C$/12h). Consequently, since $Pr_ 6$$O_{11}$-based ZnO varistors doped with 0.5 mol% $Y_2$$O_3$ have an excellent stability as well as good nonlinearity, it is expected to be usefully used to develop the superior varistors in future.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.37 no.1
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• pp.1-8
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• 2013

Coolant rubber hoses for automotive radiators can degrade under thermal and mechanical loadings and thus fail owing to the influences of locally formed electricity. In this study, an advanced test method was developed to simulate the failure of a rubber hose. The aging behavior of carbon-black-filled ethylene-propylene diene monomer (EPDM) rubber used as a radiator hose material under a combination of electrochemical stresses and tensile strain was analyzed. The changing behaviors of the current and the resistance as a function of the aging time were analyzed in consideration of the tensile strain, voltage, and aging temperature. Sectioned specimens clarified the failure mechanisms of the aged skin layer under the combined electrochemical stresses.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.355-363
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• 2015

HVDC technology has become popular as an economic mode of bulk power transmission over very long distances. Polymeric insulators in HVDC power transmission lines are affected by surface tracking and erosion problems due to contamination deposit, which pose a greater challenge in maintaining the reliability of the HVDC system. In addition, polymeric insulators are also naturally affected by aging due to various environmental stresses, which in turn accelerates the surface tracking and erosion problems. Research works towards the improvement of tracking and erosion resistance of polymeric insulators by adding nano-sized fillers in the base material are being carried out worldwide. However, surface tracking and erosion performance of nano-filled aged polymeric insulators for HVDC applications are not well reported. Hence, in the present work, tracking and erosion resistance of the nano $Al(OH)_3$ filled silicone rubber insulation material has been evaluated under DC voltages at different filler concentrations and aged conditions, as per IEC 60587 test procedures. Leakage current and contact angle measurements were carried out to understand the surface hydrophobicity. Moving average technique was used to analyze the trend followed by leakage current. Water aged specimen shows less tracking resistance when compared with thermal aged specimen. It is observed that nano-filler concentration of 5% is even sufficient to get better tracking/erosion resistance under DC voltages.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.7
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• pp.21-29
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• 2004

Hot carrier degradation characteristics of Nano-scale CMOSFETs with dual gate oxide have been analyzed in depth. It is shown that, PMOSFET lifetime dominate the device lifetime than NMOSFET In Nano-scale CMOSFETs, that is, PMOSFET lifetime under CHC (Channel Hot Carrier) stress is much lower than NMOSFET lifetime under DAHC (Dram Avalanche Hot Carrier) stress. (In case of thin MOSFET, CHC stress showed severe degradation than DAHC for PMOSFET and DAHC than CHC for NMOSFET as well known.) Therefore, the interface trap generation due to enhanced hot hole injection will become a dominant degradation factor in upcoming Nano-scale CMOSFET technology. In case of PMOSFETs, CHC shows enhanced degradation than DAHC regardless of thin and thick PMOSFETs. However, what is important is that hot hole injection rather than hot electron injection play a important role in PMOSFET degradation i.e. threshold voltage increases and saturation drain current decreases due to the hot carrier stresses for both thin and thick PMOSFET. In case of thick MOSFET, the degradation by hot carrier is confirmed using charge pumping current method. Therefore, suppression of PMOSFET hot carrier degradation or hot hole injection is highly necessary to enhance overall device lifetime or circuit lifetime in Nano-scale CMOSFET technology

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.3
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• pp.163-168
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• 2020

We studied the change of photovoltaic properties of a flexible CuIn_xGa(_1-x)Se₂ (CIGS) solar cell fabricated on polyimide by mechanical bending with curvature radii of 75 mm (75R) and 20 mm (20R). The flexible CIGS cells were flattened on a PET film, then placed and forced against the surface of a curved block fabricated with pre-designed curvatures. Both up (compressive) and down (tensile) bending were applied to a specimen of CIGS on PET with curvatures of 75R and 20R for 10,000 times and 2,000 times, respectively. From J-V measurements, we found that the conversion efficiency (Eff.) was reduced by 3% and 4% for up-and down-bending, respectively, at curvature 75R; it was greatly reduced by 15% for curvature 20R in the up-bending. However, the open circuit voltage (V_oc) and short-circuit current density (J_sc) seemed to change little, within 3%, for the applied mechanical stresses. The degradation in Eff. resulted from the deterioration of the series (R_s) and shunt (R_sh) resistances of the solar cell.

• Proceedings of the KIPE Conference
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• 2001.10a
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• pp.256-260
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• 2001

This paper presents boost and buck and buck-boost DC-DC converter circuit topologies of high-frequency soft switching transition PWM chopper type DC-DC high power converters with a single auxiliary passive resonant snubber. In the proposed boost power converter circuits operating under a principle of ZCS turn-on and ZVS turn-off commutation schemes, the capacitor and inductor in the auxiliary passive resonant circuit works as the loss less resonant snubber. In addition to this, the switching voltage and current peak stresses as well as EMI and RFI noises can be basically reduced by this single passive resonant snubber. Moreover, it is proved that converter circuit topologies with a passive resonant snubber are capable of solving some problems of the conventional hard switching PWM processing based on high-ferquency pulse modulation operation principle. The simulation results of this converter are discussed as compared with the experimental ones. The effectiveness of this power converter with a single passive resonant snubber is verified by the 5kW experimental breadboad set up.

• Journal of Power Electronics
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• v.4 no.3
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• pp.161-168
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• 2004

This paper presents a new circuit topology of high-frequency soft switching commutation boost type PWM chopper-fed DC-DC power converter with a loadside auxiliary passive resonant snubber. In the proposed boost type chopper-fed DC-DC power converter circuit operating under a principle of ZCS turn-on and ZVS turn-off commutation, the capacitor and inductor in the auxiliary passive resonant circuit works as the lossless resonant snubber. In addition to this, the voltage and current peak stresses of the power semiconductor devices as well as their di/dt or dv/dt dynamic stress can be effectively reduced by the single passive resonant snubber treated here. Moreover, it is proved that chopper-fed DC-DC power converter circuit topology with an auxiliary passive resonant snubber could solve some problems on the conventional boost type hard switching PWM chopper-fed DC-DC power converter. The simulation results of this converter are illustrated and discussed as compared with the experimental ones. The feasible effectiveness of this soft witching DC-DC power converter with a single passive resonant snubber is verified by the 5kW, 20kHz experimental breadboard set up to be built and tested for new energy utilization such as solar photovoltaic generators and fuel sell generators.

• Proceedings of the KIPE Conference
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• 2007.11a
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• pp.115-117
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• 2007

This paper is analyzed for DC-DC chopper performance of high efficiency added in electric isolation. The general converters of high efficiency are made that the power loss of the used switching devices is minimized. To achieve high efficiency system, the proposed chopper is constructed by using a partial resonant circuit. The control switches using in the chopper are operated with soft switching for a partial resonant method. The control switches are operated without increasing their voltage and current stresses by the soft switching technology. The result is that the switching loss is very low and the efficiency of chopper is high. And the proposed chopper is added in a electric isolation. When the power conversion system is required to electric isolation, the proposed chopper is adopted with system development of high efficiency. The soft switching operation and the system efficiency of the proposed chopper is verified by digital simulation and experimental results.

• Journal of Power Electronics
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• v.15 no.2
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• pp.356-365
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• 2015

This paper presents a new single phase front-end ac-dc bridgeless power factor correction (PFC) rectifier topology. The proposed converter achieves a high efficiency over a wide range of input and output voltages, a high power factor, low line current harmonics and both step up and step down voltage conversions. This topology is based on a non-inverting buck-boost (Zeta) converter. In this approach, the input diode bridge is removed and a maximum of one diode conducts in a complete switching period. This reduces the conduction losses and the thermal stresses on the switches when compare to existing PFC topologies. Inherent power factor correction is achieved by operating the converter in the discontinuous conduction mode (DCM) which leads to a simplified control circuit. The characteristics of the proposed design, principles of operation, steady state operation analysis, and control structure are described in this paper. An experimental prototype has been built to demonstrate the feasibility of the new converter. Simulation and experimental results are provided to verify the improved power quality at the AC mains and the lower conduction losses of the converter.