• Journal of the Earthquake Engineering Society of Korea
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• v.6 no.2
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• pp.51-61
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• 2002

In this research, a numerical algorithm is developed for the response analysis of burined pipelines considering longitudinal permanent ground deformation(PGD) due to liquefaction induced lateral spreading. Buried pipelines and surrounding soil are modeled as continuous pipelines using the beam elements and a series of elasto-plastic springs represented for equivalent soil stiffness, respectively. Idealized various PGD patterns based on the observation of PGD are used as a loading configuration and the length of the lateral spread zone is considered as loading parameter. Numerical results are verified with other research results and efficient applicability of developed procedure is shown. Analyses are performed by varying different parameters such as PGD pattern, pipe diameter and pipe thickness. Through these procedures, relative influences of various parameters on the response of buried pipeline subject to longitudinal PGD are investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.168-168
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• 2008

Dimension of a transistor has rapidly shrunk to increase the speed of device and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate dioxide layer and low conductivity characteristic of poly-Si gate in nano-region. To cover these faults, study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$, and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-Si gate is not compatible with high-k materials for gate-insulator. Poly Si gate with high-k material has some problems such as gate depletion and dopant penetration problems. Therefore, new gate structure or materials that are compatible with high-k materials are also needed. TiN for metal/high-k gate stack is conductive enough to allow a good electrical connection and compatible with high-k materials. According to this trend, the study on dry etching of TiN for metal/high-k gate stack is needed. In this study, the investigations of the TiN etching characteristics were carried out using the inductively coupled $BCl_3$-based plasma system and adding $Cl_2$ gas. Dry etching of the TiN was studied by varying the etching parameters including $BCl_3$/Ar gas mixing ratio, RF power, DC-bias voltage to substrate, and $Cl_2$ gas addition. The plasmas were characterized by optical emission spectroscopy analysis. Scanning electron microscopy was used to investigate the etching profile.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.1
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• pp.44-48
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• 2013

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.19 no.1 s.71
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• pp.63-71
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• 2006

This study presents the effective stiffness-based optimal technique to control Quantitatively lateral drift for shear wall-frame structure system using sensitivity analysis. To this end, the element stiffness matrices are constituted to solve the compatibility problem of displacement degree of freedom between the frame and shear wall. Also, lateral drift constraint to introduce the approximation concept that can preserve the generality of the mathematical programming and can effectively solve the large scaled problems is established. And, the section property relationships for shear wall and frame members are considered in order to reduce the number of design variables and differentiate easily the stiffness matrices. Specifically, constant-shape assumption which is uniformly varying in size during optimal process is applied in frame structure. The thickness or length of shear wall can be changed depending on user's intent. Two types of 20 story shear wall-frame structure system are presented to illustrate the features of the stiffness-based optimal design technique.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.24 no.4
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• pp.439-447
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• 2011

Longitudinal cracks due to traffic truck loadings that are caused by local deformations of steel orthotropic bridge decks are sometimes observed in the wearing surface. So, underlying causes of the longitudinal pavement crack induced by structural behaviors of steel decks are investigated in this study. For this purpose, The rational finite element model of the steel deck and the pavement having the box girder is developed and a parametric study is performed by varying thickness or elastic modulus ratios of both the steel deck plate and the pavement. As a result, a large tensile strain above the webs of the u-rib and the box girder, which becomes the main cause of the cracks of the pavement, is detected from variation of the normal strain component of the wearing surface in the transverse direction.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.22 no.6
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• pp.541-548
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• 2009

In this study, Charpy impact test and numerical studies were performed to examine the effects of failure behavior and energy absorption on the notch position. For this purpose, carbon steel plate(SA-516 Gr. 70) with thickness of 25mm usually used for pressure vessel was welded by SMAW(Shielded Metal-Arc Welding)method and specimens were fabricated from the welded plate. The Charpy impact tests were then performed with specimens having different notch positions varying within HAZ. A series of three-dimensional FE analysis which simulates the Charpy test and crack propagation are carried out as well. We divided HAZ into two, three and four regions to apply mechanical properties of HAZ to FE-analys. Results reveal that the absorbed energies during impact test depend significantly on the notch position. To obtain the results of reliability, HAZ should be divided into at least three regions.

• Korean Journal of Optics and Photonics
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• v.17 no.2
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• pp.149-158
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• 2006

We have analyzed various tolerances of the multi-configurative microscopic system for inspecting the wire-bonding of a reed frame by using the Gaussian bracket method and the equivalent lens method. The tolerances for the curvature and the thickness, which are axial symmetric tolerances, are given by varying the back focal length within a fecal depth under diffraction-limited conditions. Moreover, by using the trial and error method, the axial non-symmetric tolerances for decenter and tilt are established by assigning the 5% variation of MTF(modulation transfer function) at the spatial frequency of 50 lp/mm and at the field angle of 0.7 field. As the tolerances with the most probable distribution are distributed within the range of the decay rate of less than 5% independent of the probability distribution of tolerances, we can achieve completely the desired design performances of the multi-configurative microscopic system by using the various ranges of these tolerances.

• Journal of the Korean Ceramic Society
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• v.32 no.5
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• pp.617-625
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• 1995

In order to reduce reflectance of soda-lime glass having average reflectance of 7.35% and refractive index of 1.53, single (SiO2), double (SiO2/20SiO2-80ZrO2), and triple (SiO2/ZrO2/75SiO2-25ZrO2) layers were designed and fabricated on the glass substrate by Sol-Gel method. Stble sols of SiO2-ZrO2 binary system for antireflective (AR) coatings were synthesized with tetraethyl orthosilicate (TEOS) and zirconium n-butoxide as precursors and ethylacetoacetate (EAcAc) as a chelating agent in an atmosphere environment. Films were deposited on soda-lime glass at the withdrawal rates of 3~11 cm/min using the prepared polymeric sols by dip-coating and they were heat-treated at 45$0^{\circ}C$ for 10 min to obtain homogeneous, amorphous and crack-free films. In case of SiO2-ZrO2 binary system, refractive index of film increased with an increase of ZrO2 mol%. Designed optical constant of films could be obtained through varying the withdrawal rate. In the visible region (380~780nm), reflectance was measured with UV/VIS/NIR Spectrophotometer. Average reflectances of the prepared single-layer [SiO2 (n=1.46, t=103nm)], double-layer [SiO2 (n=1.46, t=1-4nm)/20SiO2-80ZrO2 (n=1.81, t=82nm)], and triple-layer [SiO2 (n=1.46, t=104nm)/ZrO2 (n=1.90, t=80nm)/75SiO2-25ZrO2 (n=1.61, t=94 nm)] were 4.74%, 0.75% and 0.38%, respectively.

• Journal of the Korean Ceramic Society
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• v.48 no.5
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• pp.447-453
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• 2011

The monodisperse spherical $SiO_2$ particles were overcoated with $Y_2O_3:Eu^{3+}$ phosphor layers via a Pechini sol-gel process and the resulting $SiO_2@Y_2O_3:Eu^{3+}$ core-shell phosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and luminescent property of core-shell structured $SiO_2@Y_2O_3:Eu^{3+}$ phosphors were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL). The spherical, nonagglomerated $SiO_2$ particles prepared by a Stober method exhibited a relatively narrow size distribution in the range of 260-300 nm. The thickness of phosphor shell layer in the core-shell particles can be facilely controlled by varying the coating number of $Y_2O_3:Eu^{3+}$ phosphors. The core-shell structured $SiO_2@Y_2O_3:Eu^{3+}$ phosphors showed a strong red emission, which was dominated by the $^5D_0-^7F_2$ transition (610 nm) of $Eu^{3+}$ ion under the ultraviolet excitation (263 nm). The PL emission properties of $SiO_2@Y_2O_3:Eu^{3+}$ phosphors were also compared with pure $Y_2O_3:Eu^{3+}$ nanophosphors.