Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study on the Characteristics of NbOx Thin Film at Various Frequencies of Pulsed DC Sputtering by In-Line Sputter System

인라인 스퍼터 시스템을 이용한 펄스의 주파수 변화에 따른 NbOx 박막 특성에 관한 연구

  • Eom, Jimi (Department of Electronics Engineering, Gachon University) ;
  • Oh, Hyungon (Department of Electronics Engineering, Myongji University) ;
  • Kwon, Sang Jik (Department of Electronics Engineering, Gachon University) ;
  • Park, Jung Chul (Department of Electronics Engineering, Gachon University) ;
  • Cho, Eou Sik (Department of Electronics Engineering, Gachon University) ;
  • Cho, Il Hwan (Department of Electronics Engineering, Myongji University)
  • Received : 2012.11.14
  • Accepted : 2012.11.29
  • Published : 2013.01.01
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Abstract

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

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References

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