• Transactions on Electrical and Electronic Materials
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• 제8권3호
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• pp.105-109
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• 2007

The microstructure and electrical properties of Zn-Pr-Co-Cr-Tb oxide-based varistors were investigated for different $Tb_4O_7$ amounts. As the $Tb_4O_7$ amount increased, the average grain size decreased from 7.7 to $4.8{\mu}m$ and the sintered density increased from 5.73 to $5.84g/cm^3$. As the $Tb_4O_7$ amount increased, the varistor voltage increased from 280.9 to 715.8V/mm and the nonlinear coefficient increased from 26.4 to 44.4. It is assumed that these varistors can be applied for high power with compact size.

• The Korean Journal of Ceramics
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• 제4권3호
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• pp.207-212
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• 1998

By comparison of the experimental results in two systems of ZnO varistors, it's appear that Sb2O3 is the indispensable element for twining in ZnO varistors and the Zn7Sb2O12 spinel acts as the nucleus to form twins. Al2O3 is not the origin of twining in ZnO varistor, but it was found that Al2O3 could strengthen the twining and form a deformation twining by ZnAl2O4 dragging and pinning effect. The inhibition ratios of grain and nonuniformity of two systems ZnO varistors increase with the increase of Al2O3 content. The twins affect the inhibition of grain growth, the mechanism could be explained follow as: twins increase the mobility viscosity of ZrO grain and grain boundary, and drag ZrO grain and liquid grain boundary during the sintering, then the grain growth is inhibited and the microstructure becomes more uniform.

• 한국세라믹학회지
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• 제41권6호
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• pp.464-470
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• 2004

ZnO-P $r_{6}$ $O_{11}$-CoO-C $r_2$ $O_3$- $Y_2$ $O_3$계 세라믹스로 구성된 ZPCCY계 바리스터의 소결시간별 DC 가속열화 스트레스에 대한 전기적 안정성을 조사하였다. 소결시간은 전기적 특성 및 안정성에 크게 영향을 미치는 것으로 나타났다. 소결시간이 증가함에 따라 비직선 지수는 51.2∼23.8의 범위로 감소하였으며, 누설전류는 1.3∼5.6 $\mu$A의 범위로 증가하였다. 1시간 소결된 바리스터는 비직선성은 우수하나 밀도가 낮은 관계로 안정성이 상대적으로 낮았으며, 3시간 소결된 바리스터는 안정성은 양호하나 비직선성이 다소 낮은 것으로 나타났다 2시간 소결된 바리스터는 비직선 지수가 38.6, 누설전류가 3.6 $\mu$A로 양호 하고, DC스트레스_0.95 $V_{1㎃}$15$0^{\circ}C$/12h에서 바리스터 전압, 비직선 지수, 누설전류, 손실계수 변화율이 각각 -0.8%, -1.8%, +74.4%, +0.9%를 나타냄으로서 안정성이 우수한 것으로 나타났다.다.

• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.307-312
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• 2018

Liquid phases in ZnO varistors cause more complex phase development and microstructure, which makes the control of electrical properties and reliability more difficult. Therefore, we have investigated 2 mol% $CaCO_3$ doped $ZnO-Co_3O_4-Cr_2O_3-La_2O_3$ (ZCCLCa) bulk ceramics as one of the compositions without liquid phase sintering additive. The results were as follows: when $CaCO_3$ is added to ZCCLCa ($644{\Omega}cm$) acting as a simple ohmic resistor, CaO does not form a secondary phase with ZnO but is mostly distributed in the grain boundary and has excellent varistor characteristics (high nonlinear coefficient ${\alpha}=78$, low leakage current of $0.06{\mu}A/cm^2$, and high insulation resistance of $1{\times}10^{11}{\Omega}cm$). The main defects $Zn_i^{{\cdot}{\cdot}}$ (AS: 0.16 eV, IS & MS: 0.20 eV) and $V_o^{\bullet}$ (AS: 0.29 eV, IS & MS: 0.37 eV) were found, and the grain boundaries had 1.1 eV with electrically single grain boundary. The resistance of each defect and grain boundary decreases exponentially with increasing the measurement temperature. However, the capacitance (0.2 nF) of the grain boundary was ~1/10 lower than that of the two defects (~3.8 nF, ~2.2 nF) and showed a tendency to decrease as the measurement temperature increased. Therefore, ZCCLCa varistors have high sintering temperature of $1,200^{\circ}C$ due to lack of liquid phase additives, but excellent varistor characteristics are exhibited, which means ZCCLCa is a good candidate for realizing chip type or disc type commercial varistor products with excellent performance.

• Transactions on Electrical and Electronic Materials
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• 제13권5호
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• pp.262-265
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• 2012

The Microstructure and nonlinear electrical properties of the ZPCCYT (ZnO-$Pr_6O_{11}$-CoO-$Cr_2O_3$-$Y_2O_3$-$Tb_4O_7$) varistors were investigated for different amounts of $Tb_4O_7$. The addition of $Tb_4O_7$ has a significant effect on microstructure and electrical properties. Analysis of the microstructure indicated that the ceramics consisted of ZnO grain as a main phase and a few secondary phases as a mix of $Pr_6O_{11}$, $Y_2O_3$, and $Tb_4O_7$. As the amount of $Tb_4O_7$ increased, the sintered densities of pellets increased from $\rho$ = 5.70 to $5.78g/cm^3$ and the average grain size decreased from d = 4.8 to $3.6{\mu}m$. The increase in the amount of $Tb_4O_7$ increased from $E_B$ = 7,473 to 10,035 V/cm and from ${\alpha}$ = 39.7 to 52.2. In particular, it was found that the ceramics modified with 1.0 mol% in the amount of $Tb_4O_7$ are suited for the varistors for high voltage in the light of a high sintered density and a high voltage gradient.

• 한국세라믹학회지
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• 제39권3호
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• pp.286-293
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• 2002

소성온도에 따른 ZnO계 적층형 세라믹 칩 바리스터(약칭 MLV)의 미세구조와 전기적 특성의 변화를 조사하였다. 소성온도 1100$^{\circ}$C에서 Ag/Pd(7:3) 내부전극층의 두께가 불균일하게 변화하면서 부분적인 공극이 발생하기 시작하고, 1150$^{\circ}$C에서는 상당한 전극 패턴의 소멸과 박리가 관찰되었다. 950$^{\circ}$C로 소성한 MLV의 경우 누설전류의 열화가 특히 컸는데 이는 미반응의 pyrochlore상이 잔류하여 액상과 천이원소의 균일한 분포가 일어나지 않았기 때문이라 사료된다. 1100$^{\circ}$C 이상의 온도로 소성한 경우에는 바리스터 특성 및 그 재현성의 저하가 관찰되었는데, 이는 내부전극의 소멸, 전극물질과 소체의 반응, 그리고 $Bi_2O_3$의 휘발에 기인한 것으로 보인다. 한편, 950∼1100$^{\circ}$C의 전 소성온도 범위에 걸쳐 온도가 증가할수록 정전용량과 누설전류는 증가하고 항복전압과 피크전류는 감소하였으나, 비선형계수와 클램핑 비는 각각 ∼30 및 1.4로 거의 일정한 값을 유지하였다. 특히 1000∼1050$^{\circ}$C 소성체의 경우 칩 바리스터에 적합한 바리스터 특성이 재현성 있게 나타났다. 결과적으로 Ag/Pd(7:3) 합금은 1050$^{\circ}$C의 동시 소성 온도이하에서는 $Bi_2O_3$를 함유한 대부분의 ZnO계 MLV의 내부전극으로 충분히 사용가능한 것으로 판단된다.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.835-839
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• 2004

The surge characteristics of ZnO varistors consisting of $ZnO-{Pr}_6{O}_11-CoO-{Cr}_2{O}_3-{Er}_2{O}_3$ceramics were investigated at various sintering temperatures. As sintering temperature raises, the varistor voltage was decreased from 341.2 to 223.1 V/mm, the nonlinear exponent was decreased from 64,9 to 44.1. On the other hand, the leakage current exhibited a minimum(0.64 $\mu$A) at 134$0^{\circ}C$, The clamping capability was slightly deteriorated with increasing sintering temperature. On the whole, the ZPCCE-based ZnO varistors exhibited good clamping voltage characteristics as exhibiting the clamping voltage ratio of 1.85 ∼ 1.92 approximately at surge current of 100 A.

• 한국세라믹학회지
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• 제25권6호
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• pp.645-654
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• 1988

The microstructure and electrical characteristics of ZnO-Bi2O3 ceramics containing 5mol% Bi2O3 have been studied in relation to sintering temperature and mode. The distribution and thickness of Bi2O3 intergranular layer was varied with sintering temperature and mode. Intergranular layer was more homogeneous with increasing sintering temperature, when sintering by direct heating and rapid cooling mode showed the best distribution of intergranular layer. These microstructural changes affected electrical characteristics directly, at 140$0^{\circ}C$ and C mode obtained high value of electrical resistivity and nonlinear exponent. Varistor voltage decreased with increasing sintering temperature, increased with decreasing holding time at high temperature. Barrier voltage obtained by calculation was about 1.5V.

• 한국전기전자재료학회논문지
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• 제21권8호
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• pp.738-748
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• 2008

In this study, it has been investigated on the changing behavior of electrical properties in $ZnO-Bi_2O_3-Sb_2O_3$ (Sb/Bi=2.0, 1.0 and 0.5) ceramics. The samples were prepared by conventional ceramic process, and then characterized by I-V, C-V curve plots, impedance and modulus spectroscopy (IS & MS) measurement. The electrical properties of ZBS systems were strongly dependent on Sb/Bi. In ZBS systems, the varistor characteristics were deteriorated noticeably with increasing Sb/Bi and the donor density and interface state density were increased with increasing Sb/Bi. On the other hand, we observed that the grain boundary reacted actively with the ambient oxygen according to Sb/Bi ratio. Especially the grain boundaries of Sb/Bi=0.5 systems were divided into two types, i.e. sensitive to oxygen and thus electrically active one and electrically inactive intergranular one with temperature. Besides, the increased pyrochlore and $\beta$-spinel phase with Sb/Bi ratio caused the distributional inhomogeneity in the grain boundary barrier height and the temperature instability. To the contrary, the grain boundary layer was relatively homogeneous and more stable to temperature change and kept the system highly nonlinear at high Bi-rich phase contents.

• 한국전기전자재료학회논문지
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• 제14권8호
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• pp.640-646
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• 2001

The electrical stability for DC stress of Pr$_{6}$O$_{11}$-based ZnO varistos consisting of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$-based ceramics were investigated with sintering temperature in the range of 1325~1345$^{\circ}C$. A the sintering temperature is raised, the nonlinear exponent of varistors was decreased, whereas the stability was markedly improved. The density of ceramics was found to greatly affect the electrical stability for DC stress. The varistors sintered at 13$25^{\circ}C$ were completely degraded because of thermal runaway attributing to low density. The varistors sintered at 1335$^{\circ}C$ exhibited the highest nonlinearity, with a nonlinear exponent of 70.53 and a leakage current of 1.92$\mu$A, whereas they did not exhibit relatively high stability. On the contrary, the varistors sintered at >134$0^{\circ}C$ exhibited not only a high nonlinearity marking the nonlinear exponent above 50 and the leakage current below 3$\mu$A, but also a high stability marking the variation rate of the varistor voltage below 2%, even under DC stress such as (0.80V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85V$_{1mA}$/115$^{\circ}C$/12h)+(0.90V$_{1mA}$/12$0^{\circ}C$/12h)+(0.95V$_{1mA}$/1$25^{\circ}C$/12h)+(0.95V$_{1mA}$/15$0^{\circ}C$/12h). In particular, ti was found that the varistors sintered at 134$0^{\circ}C$ were more nonlinear and more stable, compared with that of 1345$^{\circ}C$.EX>.}C$.EX>.