• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.11 no.3
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• pp.321-331
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• 1999

A numerical study is carried out for increasing heat removal using indirect cooling system. Computation is performed for nine cases as variation of flow condition in the lower channel. As the result of this study, water is more effective than air at the same pressure loss in spite of the lower inlet velocity. In channel configuration, the vertical channel is more effective than horizontal channel because of the buoyancy effect. Under the condition that heat generation is the same, counter flow effectively decreases the temperature difference among blocks. Parallel flow is more effective than counter flow when average temperature of all blocks is considered. In the case of installing obstacles in the lower channel, it is desirable to install obstacles in the bottom of lower channel. Heat transfer rate increases as the height of obstacles increases.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.449-452
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• 2010

We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low power consumption. As device size scaled down, the controllability of dimensions and oxide thickness is very low. We have analyzed the short channel effects for the variation of channel dimensions, and found the design conditions of DGMOSFET having the optimum subthreshold characteristics for digital applications.

• Transactions on Electrical and Electronic Materials
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• v.18 no.1
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• pp.51-54
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• 2017

TFTs (thin film transistors) were fabricated using a-SIZO (amorphous silicon-indium-zinc-oxide) channel by RF (radio frequency) magnetron sputtering at room temperature. We report the influence of various channel thickness on the electrical performances of a-SIZO TFTs and their stability, using TS (temperature stress) and NBTS (negative bias temperature stress). Channel thickness was controlled by changing the deposition time. As the channel thickness increased, the threshold voltage ($V_{TH}$) of a-SIZO changed to the negative direction, from 1.3 to -2.4 V. This is mainly due to the increase of carrier concentration. During TS and NBTS, the threshold voltage shift (${\Delta}V_{TH}$) increased steadily, with increasing channel thickness. These results can be explained by the total trap density ($N_T$) increase due to the increase of bulk trap density ($N_{Bulk}$) in a-SIZO channel layer.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.28 no.11
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• pp.444-449
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• 2016

The main objective of this work is to experimentally investigate the effect of angle variation and intrusion depth of channels on the distribution of two-phase flow at header-channel junctions. The dimensions of the header and the channels in cross-section were fixed at $16mm{\times}16mm$ and $12mm{\times}1.8mm$, respectively. Air and water were used as the test fluids. Two different header-channel positions were tested : a vertical header with horizontal channels (case VM-HC) and a horizontal header with horizontal channels (case HM-HC). In all cases, the intrusion depths of the channels are 0 mm, 2 mm, and 4 mm. For the case of the intrusion depth of VM-HC, the flow distribution became more uniform. However, the intrusion depth negatively affected the flow distribution for the case of HM-HC because liquid separation delay occurred.

• Transactions of the Korean Society of Mechanical Engineers
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• v.19 no.12
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• pp.3329-3343
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• 1995

The interaction of mixed convection and surface radiation in a printed circuit board(PCB) is investigated numerically. The electronic equipment is modeled by a two-dimensional channel with three hot blocks. In order to calculate the turbulent flow characteristics, the low Reynolds number k-.epsilon. model which is proposed by Launder and Sharma is applied. The S-4 approximation is used to solve the radiative transfer equation. The effects of the Reynolds number and geometric configuration variation of PCB on the flow and heat transfer characteristics are analyzed. As the results of this study, it is found that the thermal boundary layer occured at adiabatic wall in case with thermal radiation included, and the effect of radiation is also found to be insignificant for high Reynolds numbers. It is found, as well, that the heat transfer increases as the Reynolds number and block space increase and the channel height decreases and the heat transfer of vertical channel is greater than that of horizontal channel.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.579-582
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• 2008

Three dimensional(3D) Poisson's equation is used to calculate the potential variation in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension and process parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• Journal of Environmental Science International
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• v.17 no.7
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• pp.783-793
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• 2008

The purpose of this study is to analyze the sensitivity of the RMA2 model parameters reflecting the flow characteristics of stream junction and thus understand the hydraulic characteristics of the channel confluence flow. This study dealt with the input parameters of the RMA-2 model, a two-dimensional numerical analysis model widely used for researches both at home and abroad. The parameters of the RMA-2 model are roughness coefficient, turbulent diffusion coefficient, Coriolis forces latitude, Density, and mesh size. This study those parameters estimated from actual heavy rainfall, and varied the parameter size by (-)30%${\sim}$+30% to review the characteristics of the flow characteristics of the channel section. Weobserved that when the ratio of the channel width was relatively small, the smaller the approaching angle was, the farther from the junctions became the generating place of the maximum flow velocity, however, when the ratio of the channel width was relatively large, the larger the approaching angle was, the farther the generating place of the maximum flow velocity from the junctions became. In particular, the distance between junctions and the place where the maximum flow velocity generated showed an absolute correlationover 90% of the relative channel width, but an inverse relationwas found when the distance to the place where the flow velocity generated was shortened as relative the channel width between the main channel and tributary increased.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.4
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• pp.747-752
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• 2009

Three dimensional(3D) Poisson's equation is used to calculate the potential variation for FinFET in the channel to analyze subthreshold current and short channel effect(SCE). The analytical model has been presented to lessen calculating time and understand the relationship of parameters. The accuracy of this model has been verified by the data from 3D numerical device simulator and variation for dimension parameters has been explained. The model has been developed to obtain channel potential of FinFET according to channel doping and to calculate subthreshold current and threshold voltage.

• 한국전산유체공학회:학술대회논문집
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• 2011.05a
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• pp.504-507
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• 2011

The inertial migration of a two-dimensional elastic capsule in a channel flow was studied over the Reynolds number range $1{\leq}Re{\leq}100$. The lateral migration velocity, slip velocity, and the deformation and inclination angle of the capsule were investigated by varying the lateral position, Reynolds number, capsule-to-channel size ratio(${\lambda}$), membrane stretching coefficient(${\Phi}$), and membrane bending coefficient(${\gamma}$). During the initial transient motion, the lateral migration velocity increased with increasing Re and ${\lambda}$ but decreased with increases in ${\Phi}$, ${\gamma}$ and the lateral distance from the wall. The initial behavior of the capsule was influenced by variation in the initial lateral position ($y_0$), but the equilibrium position of the capsule was not affected by such variation. The balance between the wall effect and the shear gradient effect determined the equilibrium position. As Re increased, the equilibrium position initially shifted closer to the wall and then moved towards the channel center. A peak in the equilibrium position was observed near Re=30 for ${\gamma}=0.1$, and the peak shifted to higher Re as ${\gamma}$ increased. Depending on the lateral migration velocity, the equilibrium position moved toward the centerline for larger ${\gamma}$ but moved toward the wall for larger ${\Phi}$ and ${\gamma}$.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.10a
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• pp.889-893
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• 2015

In this work, the characteristics of GIDL current in nanowire GAA MOSFET with different channel width and hot carrier stress. When the gate length is fixed as a 250nm the GIDL current with different channel width of 10nm, 50nm, 80nm, and 130nm have been measured and analyzed. From the measurement, the GIDL is increased as the channel width decreaes. However, the derive current is increased as the channel width increases. From measurement results after hot carrier stress, the variation of GIDL current is increased with decreasing channel width. Finally, the reasons for the increase of GIDL current with decreasing channel width and r device. according to hot carrier stress GIDL's variation shows big change when width and the increase of GIDL current after hot carrier stress are confirmed through the device simulation.