• 제목/요약/키워드: vapor-liquid-solid (VLS)

검색결과 47건 처리시간 0.026초

Growth and Characterization of P-type Doping for InAs Nanowires during Vapor-liquid-solid and Vapor-solid Growth Mechanism by MOCVD

  • Hwang, Jeongwoo;Kim, Myung Sang;Lee, Sang Jun;Shin, Jae Cheol
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.328.2-328.2
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    • 2014
  • Semiconductor nanowires (NWs) have attracted research interests due to the distinct physical properties that can lead to variousoptical and electrical applications. In this paper, we have grown InAs NWs viagold (Au)-assisted vapor-liquid-solid (VLS) and catalyst-free vapor-solid (VS) mechanisms and investigated on the p-type doping profile of the NWs. Metal-organic chemical vapor deposition (MOCVD) is used for the growth of the NWs. Trimethylindium (TMIn) and arsine (AsH3) were used for the precursor and diethyl zinc (DEZn) was used for the p-type doping source of the NWs. The effectiveness of p-type doping was confirmed by electrical measurement, showing an increase of the electron density with the DEZn flow. The structural properties of the InAs NWs were examined using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). In addition, we characterize atomic distribution of InAs NWs using energy-dispersive X-ray spectroscopy (EDX) analysis.

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VLS 방법을 이용한 단결정 InxGa1-xAs 나노와이어 성장과 조성비 변화에 대한 특성측정 (Single Crystalline InxGa1-xAs Nanowires on Si (111) via VLS Method)

  • 신현욱;신재철;최정우
    • 한국진공학회지
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    • 제22권2호
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    • pp.105-110
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    • 2013
  • Vapor-Liquid-Solid 방법을 이용하여 다양한 성장온도와 V/III 비율 아래 $In_xGa_{1-x}As$ 나노와이어를 실리콘 (111) 기판 위에 성장하였다. 나노와이어 성장은 화학기상증착(MOCVD)장치를 이용하였으며, 나노와이어의 구조적 특성은 주사전자현미경 및 투과전자현미경을 이용하여 분석하였다. 나노와이어의 조성비 분포를 확인하기 위하여 투과전자현미경에 장착된 Energy dispersive X-ray 분석기로 나노와이어의 길이에 따른 In과 Ga의 조성비를 측정하였다. 성장온도와 V/III 비율이 올라갈수록 In 조성비가 나노와이어 내부에서 크게 변하는 것을 확인하였는데, 이는 Vapor-Solid 방식에 의한 나노와이어 표면에서의 성장이 증가하기 때문으로 이해된다.

CVD 방법을 이용한 단결정 InSb 나노와이어의 성장과 Open/Close 시스템에서의 반응 메커니즘 연구 (Synthesis of Single-Crystalline InSb Nanowires Using CVD Method and Study of Growth Mechanism in Open and Close System)

  • 강은지;박이슬;이진석
    • 한국진공학회지
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    • 제22권6호
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    • pp.306-312
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    • 2013
  • 화학적 증기증착(Chemical Vapor Deposition, CVD) 방법을 이용하여 단결정 Indium antimonide (InSb) 나노와이어를 $SiO_2$ wafer 위에 성장시켰으며, 성장된 InSb 나노와이어의 결정성과 조성비를 X-Ray Diffraction (XRD)과 Energy Dispersive x-ray Spectroscopy (EDS)의 측정을 통하여 확인하였다. 또한, 반응 source로 사용된 InSb 분말의 기상화(vaporization) 정도를 source container의 모형, 즉 open 및 close 시스템으로 변형하여 조절하였고 이렇게 성장된 InSb 나노와이어들의 구조적 특성을 주사전자현미경(Scaning Electron Microscopy, SEM)을 통하여 자세히 분석함으로써, 그들의 성장과정을 Vapor-Liquid-Solid (VLS) 및 Vapor-Solid (VS) 메커니즘으로 설명하였다. Open-boat를 사용하여 나노와이어를 성장시켰을 경우, close-boat 의 경우와 비교하여 합성된 나노와이어의 yield가 높았으며 나노와이어의 길이와 두께도 증가하는 현상이 관측되었다. 이러한 결과는, InSb source 의 기상화 정도가 close-boat에서 보다 open-boat에서 더욱 가속화되면서 공통적으로 일어나는 VLS 성장 이외에 VS 성장이 추가적으로 진행되어지기 때문으로 추측되어진다. 또한, 반응시간을 증가시켰을 때, 나노와이어의 두께가 증가하는 결과를 통하여 InSb 나노와이어의 성장에서 VS 메커니즘이 우세하게 작용하고 있음을 확인할 수 있었다.

Interplay between Defect Propagation and Surface Hydrogen in Silicon Nanowire Kinking Superstructures

  • 신내철
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.221.1-221.1
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    • 2015
  • The vapor-liquid-solid (VLS) method, where the "liquid" catalytic droplets collecting atoms from vapor precursors build the solid crystal layers via supersaturation, is a ubiquitous technique to synthesize 1-dimensional nanoscale materials. However, the lack of fundamental understanding of chemical information governing the process inhibits the rational route to the structural programming. By combining the in situ or operando IR spectroscopy with post-growth high resolution electron microscopy, we show the strong correlation between the surface chemical species concentration and nanowire structures. More specifically, the critical role of surface adsorbed hydrogen, generated from the decomposition of Si2H6 precursor on the interplay between nanowire / kinking and the defect propagation is demonstrated. Our results show that adsorbed hydrogen atoms are responsible for selecting -oriented growth and indicate that a twin boundary imparts structural coherence. The twin boundary, only continuous at / kinks, reduces the symmetry of the trijunction and limits the number of degenerate directions available to the nanowire. These findings constitute a general approach for rationally engineering kinking superstructures and also provide important insight into the role of surface chemical bonding during VLS synthesis.

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Morphology Control of Single Crystalline Rutile TiO2 Nanowires

  • Park, Yi-Seul;Lee, Jin-Seok
    • Bulletin of the Korean Chemical Society
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    • 제32권10호
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    • pp.3571-3574
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    • 2011
  • Nano-scaled metal oxides have been attractive materials for sensors, photocatalysis, and dye-sensitization for solar cells. We report the controlled synthesis and characterization of single crystalline $TiO_2$ nanowires via a catalyst-assisted vapor-liquid-solid (VLS) and vapor-solid (VS) growth mechanism during TiO powder evaporation. Scanning electron microscope (SEM) and transmission electron microscope (TEM) studies show that as grown $TiO_2$ materials are one-dimensional (1D) nano-structures with a single crystalline rutile phase. Also, energy-dispersive X-ray (EDX) spectroscopy indicates the presence of both Ti and O with a Ti/O atomic ratio of 1 to 2. Various morphologies of single crystalline $TiO_2$ nano-structures are realized by controlling the growth temperature and flow rate of carrier gas. Large amount of reactant evaporated at high temperature and high flow rate is crucial to the morphology change of $TiO_2$ nanowire.

골융합을 위한 Vapor-Liquid-Solid 법을 이용한 TiO2 나노와이어의 합성 (Fabrication of TiO2 Nanowires Using Vapor-Liquid-Solid Process for the Osseointegration)

  • 윤영식;강은혜;윤인식;김용욱;여종석
    • 한국진공학회지
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    • 제22권4호
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    • pp.204-210
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    • 2013
  • 임플란트와의 골융합을 향상시키기 위해서 세포와 임플란트 표면의 나노구조의 상호작용에 대한 이해가 중요하다. 본 연구에서는 Sn를 촉매로 이용하여 Vapor-Liquid-Solid 법을 이용하여 $TiO_2$ 나노와이어를 튜브 전기로 안에서 질소기체 조건하에서 합성하였다. 이 때 촉매로 사용된 Sn 박막의 두께에 따라 응집된 나노스피어를 이용하여 $TiO_2$ 나노와이어의 크기를 조절하였다. 골융합을 위한 예비 실험으로써, 만들어진 $TiO_2$ 나노와이어 샘플 위에서 조골전구세포(pre-osteoblast)를 1주일간 배양하였고, 세포가 $TiO_2$ 나노와이어에 잘 결합함을 볼 수 있었다.

SLS 성장방법에 의한 SiC 나노와이어의 성장 (Growth of SiC nanowires by SLS growth mechanism)

  • 노대호;김재수;변동진;진정근;김나리;양재웅
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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    • pp.116-116
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    • 2003
  • Most of all nano-structures, SiC had a high electrical conductivity and mechanical strengths ay high temperatures. So It was considered a useful materials for nanosized device materials and added materials for strength hardening. Much methods were developed for SiC nanowire and nanorods like CVD, carbothermal reduction, Laser ablation and CNT-confined reduction. These methods used the VLS (Vapor-Liquid-Solid) growth mechanism. In these experiments, SiC nanowire was grown by SLS (Sold-Liquid-Solid) growth mechanism used Graphite substrate, And we characterized its microstructure to compare with VLS growth mechanism.

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수직배향된 산화아연 나노막대의 성장 및 발광특성에 관한 연구 (Metalorganic vapor-phase epitaxial growth of vertically well-aligned ZnO nanorods and their photoluminescent properties)

  • Jeon Yong-Ho;Park Won-Il;Lee Gyu-Cheol
    • 한국광학회:학술대회논문집
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    • 한국광학회 2002년도 하계학술발표회
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    • pp.174-175
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    • 2002
  • One-dimensional semiconductor nanowires and nanorods have attracted increasing interest due to their unique physical properties and diversity for potential electronic and photonic device applications., Unlike the conventional nanowires fabricated by metal catalyst-assisted vapor-liquid-solid (VLS) method, we developed metalorganic vapor-phase epitaxial (MOVPE) growth for which no catalyst is needed. The structural and photoluminecent properties will also be discussed. (omitted)

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탄화규소 휘스커의 (II): 적층결함 (Synthesis of Silicon Carbide Whiskers (II): Stacking Faults)

  • 최헌진;이준근
    • 한국세라믹학회지
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    • 제36권1호
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    • pp.36-42
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    • 1999
  • 2단계 열탄소환원법으로 탄화규소 휘스커를 기상-고상, 2단계, 기상-액상-고상 성장기구로 각각 합성하였다. 그리고 휘스커에 있는 적층결합을 X-ray와 투과전자현미경을 이용하여 분석하였다. 탄화규소 휘스커에 있는 적층결함은 휘스커의 지름과 상관관계가 있는 것으로 나타났다. 즉, 기상-고상, 2단계 성장, 기상-액상-고상 성장기구에 상관없이 지름이 1$\mu\textrm{m}$이하로 작아지는 경우 적층결합이 많아지고, 기상-액상-고상 기구로 성장한 지름이 2$\mu\textrm{m}$보다 큰 경우 적층결함이 거의 없는 것으로 나타났다. 이같은 현상은 휘스커 지름이 작아짐에 따라 휘스커의 비표면적이 증가하는 때문인 것으로 판단되었다.

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Control of Nanospacing in TiO2 Nanowire Array Using Electron Beam Lithography

  • Yun, Young-Shik;Yeo, Jong-Souk
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.430.1-430.1
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    • 2014
  • According to advanced nanotechnology in the field of biomedical engineering, many studies of the interaction between topography of surfaces and cellular responses have been focused on nanostructure. In order to investigate this interaction, it is essential to make well-controlled nanostructures. Electron beam lithography (EBL) have been considered the most typical processes to fabricate and control nano-scale patterns. In this work, $TiO_2$ nanowire array was fabricated with hybrid process (top-down and bottom-up processes). Nanodot arrays were patterned on the substrate by EBL process (top-down). In order to control the spacing between nanodots, we optimized the EBL process using Poly(methyl methacrylate) (PMMA) as an electron beam resist. Metal lift-off was used to transfer the spacing-controlled nanodots as a seed pattern of $TiO_2$ nanowire array. Au or Sn nanodots which play an important role for catalyst using Vapor-Liquid-Solid (VLS) method were patterned on the substrate through the lift-off process. Then, the sample was placed in the tube furnace and heated at the synthesis temperature. After heat treatment, $TiO_2$ nanowire array was fabricated from the nanodots through VLS method (bottom-up). These results of spacing-controlled nanowire arrays will be used to study the interaction between nanostructures and cellular responses in our next steps.

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