• Proceedings of the Materials Research Society of Korea Conference
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• 1996.11a
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• pp.89-89
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• 1996

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 1999.04a
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• pp.80-81
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• 1999

• Journal of the Korean Ceramic Society
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• v.56 no.3
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• pp.317-324
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• 2019

Cr-diamond-like carbon (Cr-DLC) films were deposited using a hybrid method involving both physical vapor deposition and plasma-enhanced chemical vapor deposition. DLC sputtering was carried out using argon and acetylene gases. With an increase in the DC power, the Cr content increased from 14.7 to 29.7 at%. The Cr-C bond appeared when the Cr content was 17.6 at% or more. At a Cr content of 17.6 at%, the films showed an electrical conductivity of > 363 S/cm. The current density was 9.12 × 10^-2 ㎂/㎠, and the corrosion potential was 0.240 V. Therefore, a Cr content of 17.6 at% was found to be optimum for the deposition of the Cr-DLC thin films. The Cr-DLC thin films developed in this study showed high conductivity and corrosion resistance, and hence, are suitable for applications in separators.

• The Plant Pathology Journal
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• v.36 no.2
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• pp.133-147
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• 2020

Hexanal, a C-6 aldehyde has been implicated to have antimicrobial properties. Hence, this study was conducted to determine the antifungal activities of hexanal vapor against major postharvest pathogens of banana viz., Colletotrichum gloeosporioides and Lasiodiplodia theobromae. The pathogens were cultured in vitro and exposed to hexanal vapor at 600, 800, 1,000 and 1,200 ppm. Mycelial growth of both fungal pathogens were inhibited completely at 800 ppm and the incidence of anthracnose and stem-end rot diseases reduced by 75.2% and 80.2%, respectively. The activities of peroxidase, polyphenol oxidase, phenylalanine ammonia-lyase and glucanase had transiently increased in hexanal vapor treated banana by 5 to 7 days and declined thereafter. Postharvest treatment of banana with hexanal vapor resulted in phospholipase D inhibition and also resulted in cell wall thickening of the treated fruit, which impeded the penetration of the pathogenic spores. This was further confirmed by scanning electron micrographs. The defense-related protein intermediaries had increased in hexanal vapor treated banana fruit, which suggests induced resistance against C. gloeosporioides and L. theobromae, via., the phenylpropanoid pathway which plays a significant role in hindering the pathogen quiescence. Delayed ripening due to inhibition of phospholipase D enzyme, inhibition of mycelial growth and induced systemic resistance by defense enzymes collectively contributed to the postharvest disease reduction and extended shelf life of fruit.

• Journal of the Korean Vacuum Society
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• v.22 no.4
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• pp.204-210
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• 2013

In order to improve osseointegration for biomedical implants, it is crucial to understand the interactions between nanostructured surfaces and cells. In this study, $TiO_2$ nanowires were prepared via Vapor-Liquid-Solid (VLS) process with Sn as a metal catalyst in the tube furnace. Nanowires were grown with $N_2$ heat treatment with their size controlled by the agglomeration of Sn layers in various thicknesses. MC3T3-E1 (pre-osteoblast) were cultured on the $TiO_2$ nanowires for a week. Preliminary results of the cell culture showed that the cells adhere well on the $TiO_2$ nanowires.

• Journal of the Korean Society for Heat Treatment
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• v.2 no.4
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• pp.1-10
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• 1989

To investigate the influence of temperature on the TiN film, it was deposited on the STC-3 steel and Si-wafer from $TiCl_4/N_2/H_2$ gas mixture by using the radio frequency plasma assisted chemical vapor deposition. The deposition was performed at temperature of $400^{\circ}C-500^{\circ}C$. The results showed that crystalline TiN film was deposited over $480^{\circ}C$, and all specimens showed the crystalline TiN X-ray diffraction peaks after vacuum heat treatment for 3 hrs, at $1000^{\circ}C$, $10^{-5}torr$. While the film thickness was increased above $480^{\circ}C$, it was decreased under $480^{\circ}C$ as temperature increased. And the contents of titanium were increased and it of chlorine were decreased as temperature increased. Because temperature increase was attributed to the increase in the density of TiN film, surface hardness of TiN film was increased with temperature.

• Korean Journal of Materials Research
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• v.28 no.4
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• pp.208-213
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• 2018

Epitaxial ($11{\bar{2}}0$) a-plane GaN films were grown on a ($1{\bar{1}}02$) R-plane sapphire substrate with photoresist (PR) masks using metal organic chemical vapor deposition (MOCVD). The PR mask with striped patterns was prepared using an ex-situ lithography process, whereas carbonization and heat treatment of the PR mask were carried out using an in-situ MOCVD. The heat treatment of the PR mask was continuously conducted in ambient $H_2/NH_3$ mixture gas at $1140^{\circ}C$ after carbonization by the pyrolysis in ambient $H_2$ at $1100^{\circ}C$. As the time of the heat treatment progressed, the striped patterns of the carbonized PR mask shrank. The heat treatment of the carbonized PR mask facilitated epitaxial lateral overgrowth (ELO) of a-plane GaN films without carbon contamination on the R-plane sapphire substrate. Thhe surface morphology of a-plane GaN films was investigated by scanning electron microscopy and atomic force microscopy. The structural characteristics of a-plane GaN films on an R-plane sapphire substrate were evaluated by ${\omega}-2{\theta}$ high-resolution X-ray diffraction. The a-plane GaN films were characterized by X-ray photoelectron spectroscopy (XPS) to determine carbon contamination from carbonized PR masks in the GaN film bulk. After $Ar^+$ ion etching, XPS spectra indicated that carbon contamination exists only in the surface region. Finally, the heat treatment of carbonized PR masks was used to grow high-quality a-plane GaN films without carbon contamination. This approach showed the promising potential of the ELO process by using a PR mask.

• Journal of the Korean institute of surface engineering
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• v.49 no.2
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• pp.202-210
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• 2016

This study was intended to investigate the effect of the amount of magnesium addition and heat treatment in the Al-Mg coating film in order to improve corrosion resistance of aluminum coating. Al-Mg alloy films were deposited on cold rolled steel by physical vapor deposition sputtering method. Heat treatment was fulfilled in an nitrogen atmosphere at the temperature of $400^{\circ}C$ for 10 min. The morphology was observed by SEM, component and phase of the deposited films were investigated by using GDLS and XRD, respectively. The corrosion behaviors of Al-Mg films were estimated by exposing salt spray test at 5 wt.% NaCl solution and measuring polarization curves in deaerated 3 wt.% NaCl solution. With the increase of magnesium content, the morphology of the deposited Al-Mg films changed from columnar to featureless structure and particle size was became fine. The x-ray diffraction data for deposited Al-Mg films showed only pure Al peaks. However, Al-Mg alloy peaks such as $Al_3Mg_2$ and $Al_{12}Mg_{17}$ were formed after heat treatment. All the sputtered Al-Mg films obviously showed good corrosion resistance compared with aluminum and zinc films. And corrosion resistance of Al-Mg film was increased after heat treatment.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.20 no.3
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• pp.583-589
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• 2016

Volatile organic compounds(VOCs) are regarded as a harmful cause substance not only causing air pollutions but also causing global warming phenomenon. For this reason, VOCs are managed politically to reduce emissions by each country. In particular, the vapor from the gas station contains VOCs which is harmful to the human body such as carcinogens benzene and pollute the atmosphere, the Ministry of Environment defined every gas station must install vapor recovery equipment to recover volatile organic compounds. Recently, there are many accidents caused by existing vapor treatment methods, the liquefaction recovery technology is getting the spotlight to cool the vapor at the field. However, because the liquefaction recovery technology have risks of fire or explosion in accordance with temperature, the real time monitoring is critical factor. In this paper, we implement an Android-based monitoring application for liquified vapor recovery device which attached sensor module for temperature and power to monitoring real time information.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.4
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• pp.153-157
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• 2011

We have investigated the effect of inductively coupled plasma (ICP) treatment on the early growth stage of heteroepitaxial Ge layers grown on Si(100) substrates using low pressure chemical vapor deposition (LPCVD), The Si(100) substrates were treated by ICP process with various source and bias powers, followed by the Ge deposition, The ICP treatment led to the enhancement in the coalescence of Ge islands, The growth rate of Ge on Si(100) with ICP surface treatment is about 5 times higher than that without ICP surface treatment. A missing dimer caused by the ICP surface treatment can act as a nucleation site for Ge adatoms, which could be responsible for the improvement in growth behavior of Ge on Si(100) substrates.