• Journal of Haehwa Medicine
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• v.9 no.2
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• pp.269-276
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• 2001

In the literatual study about incurable case of C.V.A, the result were as follow: 1. The expressions of incurable C.V.A are sa(死), bulchi(不治), bulgabokchi(不可復治), hyung(凶), samang(死亡), danbulgu(斷不救), etc. 2. The symptoms of incurable C.V.A are balgiktomal(髮直吐沫),oudusangchan(搖頭上竄),augugijo(魚口氣粗),mokjingjiksi,ansohusungyuegue(眼小喉聲如鋸)myunjukyejang(面赤加粧), hanchulyueju(汗出如珠), sooneuimosang(循衣摸床), sinhonbuloe(神昏不語) dumyunsujokjogabchunghuk(頭面手足靑黑), dongjiguntong(動止筋痛), tohyulhayul(吐血下血), daetodaesa(大吐大瀉), gugaeanhab(口開眼合), suchul(手撤), bihan, yunyoe(遺尿) etc. 3. The pulse of incurable C.V.A is classified with maekgeubidaesakja(脈急而大數者) and maekgindaegeunjil(脈緊大急疾). 4. The symptoms of incurable C.V.A are classified into five viscerals and classify the differences between special symtom of each visceral and proenosis.

• Journal of the Korean Chemical Society
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• v.14 no.4
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• pp.321-326
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• 1970

The relation between the heating temperature and the V.C.P(Vacuum Condensing Point) at different degree of vacuum through the sublimatographic separation was studied where by ; (1) Anthracene and Anthraquinone, ${\alpha}$-Naphtol and ${\beta}$-Naphthol, o-Aminobenzoicacid and p-Aminobeenzoicacid were easily separated from each of its mixtures as shown in Figure9, 10 and 11, while tailings appeared appreciably. The results were in good agreement with those expected from the $t_k$-V.C.P curves in Figures 3,4,5,6,7 and 8. (2) The relation between the degree of vacuum and the V.C.P. of ${\alpha}$-Naphthol and Anthracene at different heating temperatures appeared as follows and are shown in Figures 12 and 13.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.350-353
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• 2002

High voltage SiC Schottky barrier diodes with field plate structure have been fabricated and characterized. N-type 4H-SiC wafer with an epilayer of ∼10$\^$15/㎤ doping level was used as a starting material. Various Schottky metals such as Ni, Pt, Ta, Ti were sputtered and thermally-evaporated on the low-doped epilayer. Ohmic contact was formed at the backside of the SiC wafer by annealing at 950$^{\circ}C$ for 90 sec in argon using rapid thermal annealer. Field oxide of 550${\AA}$ in thickness was formed by a wet oxidation process at l150$^{\circ}C$ for 3h and subsequently heat-treated at l150$^{\circ}C$ for 30 min in argon for improving oxide quality. The turn-on voltages of the Ni/4H-SiC Schottky diode was 1.6V which was much higher than those of Pt(1.0V), Ta(0.7V) and Ti(0.7). The voltage drop was measured at the current density of 100A/$\textrm{cm}^2$ showing 2.1V for Ni Schottky diode, 1.45V for Pt 1.35V, for Ta, and 1.25V for Ti, respectively. The maximum reverse breakdown voltage was measured 1100V in the file plated Schottky diodes with 101an thick epilayer.

• Electrical & Electronic Materials
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• v.10 no.8
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.274-274
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• 2008

This paper describes on the fabrication and characteristics of a 3C-SiC (Silicon Carbide) micro pressure sensor for harsh environment applications. The implemented micro pressure sensor used 3C-SiC thin-films heteroepitaxially grown on SOI (Si-on-insulator) structures. This sensor takes advantages of the good mechanical properties of Si as diaphragms fabricated by D-RIE technology and temperature properties of 3C-SiC piezoresistors. The fabricated pressure sensors were tasted at temperature up to $250^{\circ}C$ and indicated a sensitivity of 0.46 mV/V*bar at room temperature and 0.28 mV/V*bar at $250^{\circ}C$. The fabricated 3C-SiC/SOI pressure sensor presents a high-sensitivity and excellent temperature stability.

• Korean journal of food and cookery science
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• v.12 no.1
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• pp.6-12
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• 1996

The survival and growth of Vibrio parahaemolyticus in tryptic soy broth(TSB), flounder homogenate and oyster homogenate with 0 or 5% of ethanol was tested at -20, 5, 35, 45 and 50$^{\circ}C$. Growth pattern of V. parahaemolyticus was similar in TSB and flounder homogenate but slightly poor in oyster homogenate at 35$^{\circ}C$. Growth occured at 5% ethanol, in TSB and flounder homogenate after a prolonged lag period but decreased in oyster homogenate during incubation at 35$^{\circ}C$. TSB and fish homogenates containing 0 or 5% of ethanol were inoculated with 10$\^$6/-10$\^$7/ cells/ml of V. parahaemolyticus and cold or heat resistance of the cells were determined at -20, 5, 45 and 50$^{\circ}C$. At 5$^{\circ}C$, the viability in culture broth with 5% of ethanol or without ethanol was not vary with the culture broth. In the presence of 5% of ethanol at -20$^{\circ}C$, cells of V. parahaemolyticus in flounder homogenate and oyster homogenate were more significantly inhibited than in TSB. The D-valves for V. parahaemolyticu at 45 and 50$^{\circ}C$ was significantly lower in oyster homogenate than in TSB and flounder homogenate with 5% of ethanol or without ethanol. The D-values in each culture broth without ethanol were 1.9-3.5 times of that value in each culture broth containing 5% of ethanol at 45 and 50$^{\circ}C$.

• Korean Journal of Oriental Medicine
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• v.1 no.1
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• pp.1-14
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• 1995

The clinical study was carried out on 1737 cases of inpatient and outpatient which have been diagnosed as C.V.A at hospital attached to 8 colleges of oriental medicine in Korea or National Medical Center from January 1st 1994 to December 31st 1994. The results were as follows; 1. In this study, the case of Occlusive C.V.D was 70.1%, Cerebral hemorrhage was 20.5%, Transient ischemic attack (T.I.A) was 5.3%, Subdural hemorrhage was 3.0%, Subarachnoid hemorrhage was 0.8% 2. It was confirmed by C.T (20%), E.K.G. (19%), X-ray (19%), Urinalysis (19%), Hematoscopy (20%). 3. The mean days of hospital treatment was 27.88 days, mean days of ambulation was 70.34 days. The mean days of hospital treatment of Occlusive C.V.D, Cerebral hemorrhage, T.I.A., Subdural hemorrhage, Subarachnoid hemorrhage were 25.79, 39.32, 12.49, 16.23, 23.40 days, respectively. The mean days of ambulation of Occlusive C.V.D, Cerbral hemorrhage, T.I.A., Subdural hemorrhage, Subarachnoid hemorrhage were 74.40, 93.68, 69.10, 29.75, 32.57 days, respectavely. 4. Oriental medical treatment of C.V.A was mainly Acupuncture (25%), Paper of Chinese herbs (22%), Chinese physiotherapy (14%), Extract of Chinese herbs (11%). 5. Oriental medical physiotherapy for C.V.A was mostly E.S.T., Kinesiatrics, electric negative therapy, others Aerohydrotherapy, interferential current therapy (I.C.T.), Carbon, Samhogi, T.E.N.S., Ultra-sound, Infra-red, Microwave, T.D.P., Ultraviolet, S.S.P., Chinese herbs beth, Prarffin bath, Magnetic treatment and tractions.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.7
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• pp.1255-1260
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• 2007

[ $TiO_2-V_2O_5$ ] sol was prepared using sol-gel method. Sol changed to gel with hydrolysis and polymerization. DTA properties of gel powder had endothermic reaction due to evaporation of propanol about $80^{\circ}C$, had exothermic reaction due to combustion of propanol about $230^{\circ}C$ and had exothermic reaction due to combustion of alkyl group about $350^{\circ}C$. Crystalline properties of gel powder retained amorphous phase at $50^{\circ}C$, retained anatase phase from $400^{\circ}C\;to\;600^{\circ}C$ and had all rutile phase over $700^{\circ}C$ at 0.01mole $V_2O_5$ additive. The capacitance of thin films increased with increasing heat treatment temperature and thin films had best properties at $700^{\circ}C$. The capacitance of thin films increased a lot with decreasing measurement frequency.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.8
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• pp.587-592
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• 2010

We have fabricated schottky barrier diode (SBDs) using polar (c-plane) and non polar (a-, m-plane) n-type 6H-SiC wafers. Ni/SiC ohmic contact was accomplished on the backside of the SiC wafers by thermal evaporation and annealed for 20minutes at $950^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The specific contact resistance was $3.6{\times}10^{-4}{\Omega}cm^2$ after annealing at $950^{\circ}C$. The XRD results of the alloyed contact layer show that formation of $NiSi_2$ layer might be responsible for the ohmic contact. The active rectifying electrode was formed by the same thermal evaporation of Ni thin film on topside of the SiC wafers and annealed for 5 minutes at $500^{\circ}C$ in mixture gas ($N_2$ 90% + $H_2$ balanced). The electrical properties of SBDs have been characterized by means of I-V and C-V curves. The forward voltage drop is about 0.95 V, 0.8 V and 0.8 V for c-, a- and m-plane SiC SBDs respectively. The ideality factor (${\eta}$) of all SBDs have been calculated from log(I)-V plot. The values of ideality factor were 1.46, 1.46 and 1.61 for c-, a- and m-plane SiC SBDs, respectively. The schottky barrier height (SBH) of all SBDs have been calculated from C-V curve. The values of SBH were 1.37 eV, 1.09 eV and 1.02 eV for c-, a- and m-plane SiC SBDs, respectively.