• Title/Summary/Keyword: unity gain bandwidth

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A Fast Low Dropout Regulator with High Slew Rate and Large Unity-Gain Bandwidth

  • Ko, Younghun;Jang, Yeongshin;Han, Sok-Kyun;Lee, Sang-Gug
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.4
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    • pp.263-271
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    • 2013
  • A low dropout regulator (LDO) with fast transient responses is presented. The proposed LDO eliminates the trade-off between slew rate and unity gain bandwidth, which are the key parameters for fast transient responses. In the proposed buffer, by changing the slew current path, the slew rate and unity gain bandwidth can be controlled independently. Implemented in $0.18-{\mu}m$ high voltage CMOS, the proposed LDO shows up to 200 mA load current with 0.2 V dropout voltage for $1{\mu}F$ output capacitance. The measured maximum transient output voltage variation, minimum quiescent current at no load condition, and maximum unity gain frequency are 24 mV, $7.5{\mu}A$, and higher than 1 MHz, respectively.

A CMOS Op-amp Design of Improved Common Mode Feedback(CMFB) Circuit for High-frequency Filter Implementation (고주파용 필터구현을 위한 개선된 CMFB회로를 이용한 CMOS Op-amp 설계)

  • Lim, Dae-Sung;Choi, Young-Jae;Lee, Meung-Su;Kim, Dong-Yong
    • Proceedings of the KIEE Conference
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    • 1993.07a
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    • pp.479-482
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    • 1993
  • A fully balanced differential amplifier can achieve high-gain wide-bandwidth characteristics. And also, Offset PSRR, CMRR and Noise performance of that are excellent, but these merits can be achieved only when the architecture holds fully balanced. Commonly, the fully balanced differential amplifier has a common mode feedback(CMFB) circuit in order to maintain the balance. This paper presents improved characteristics of the CMFB circuit and designs the wide-bandwidth CMOS Op-amp. The unity gain bandwidth of this Op-amp is 50MHz with the load capacitor 2pF, and the value of phase margin is $85^{\circ}$.

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A Highly Linear CMOS Baseband Chain for Wideband Wireless Applications

  • Yoo, Seoung-Jae;Ismail, Mohammed
    • ETRI Journal
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    • v.26 no.5
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    • pp.486-492
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    • 2004
  • The emergence of wide channel bandwidth wireless standards requires the use of a highly linear, wideband integrated CMOS baseband chain with moderate power consumption. In this paper, we present the design of highly linear, wideband active RC filters and a digitally programmable variable gain amplifier. To achieve a high unity gain bandwidth product with moderate power consumption, the feed-forward compensation technique is applied for the design of wideband active RC filters. Measured results from a $0.5{\mu}m$ CMOS prototype baseband chain show a cutoff frequency of 10 MHz, a variable gain range of 33 dB, an in-band IIP3 of 13 dBV, and an input referred noise of 114 ${\mu}Vrms$ while dissipating 20 mW from a 3 V supply.

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Design of A 3V CMOS Lowpass Filter Using the Improved Continuous-Time Fully-Differential Current-Mode Integrator (개선된 연속시간 Fully-Differential 전류모드 적분기를 이용한 3V CMOS 저역필터 설계)

  • 최규훈;방준호;조성익
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.4
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    • pp.685-695
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    • 1997
  • In this paper, a new CMOS continuous-time fully-differential current-mode integrator is proposed as a basic building block of the low-voltage high frequency current-mode active filter. The proposed integrator is composed of the CMOS complementary circuit which can extend transconductance of an integrator. Therefore, the unity gain frequency which is determined by a small-signal transconductance and a MOSFET gate capacitance can be expanded by the complementary transconductance of the proposed integrator. And also the magnitude of pole and zero are increased. The unity gain frequency of the proposed integrator is increased about two times larger than that of the conventional continuous-time fully-differential integrator with NMOS-gm. These results are verified by the small signal analysis and the SPICE simulation. As an application circuit of the proposed fully-differential current-mode integrator, the three-pole Chebyshev lowpass filter is designed using 0.8.$\mu$m CMOS processing parameters. SPICE simulation predicts a 3-dB bandwidth of 148MHz and power dissipation of 4.3mW/pole for the three-pole filter with 3-V power supply.

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CMOS Operational Amplifiers for Switched Capacitor Filter Application (CMOS 공정을 사용한 정밀능동필터용 연산증폭기)

  • Yang, Kyung Hoon;Kim, Wonchan;Lee, Choong Woong
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.4
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    • pp.477-483
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    • 1986
  • This paper studies the design of a CMOS operational amplifier for the switched capacitor filter by computer simulation, and presents the results of measurement. The operational amplifier composed of two stages is fabricated in the CMOS digital process. The DC voltage gain of the operational amplifier is 66dB, and the unity gain bandwidth is 833kHz. These results satisfy the performance requirmance requirements for the operational amplifier of the switched capacitor filter.

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Design of A 2V 750kHz CMOS Bandpass Active Filter (2V 750kHz CMOS 대역통과 능동필터 설계)

  • Lee, Ceun-Ho
    • Journal of Korea Multimedia Society
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    • v.7 no.11
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    • pp.1515-1520
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    • 2004
  • In this paper, a new continuous-time bandpass active filter for lour-voltage applications is proposed. The active filter is composed of the CMOS complementary cascode circuit which can increase trans-conductance of an active element. These results are verified through the 0.25$\mu\textrm{m}$ CMOS n-well parameter hspice simulation. As a result, the gain and the unity gain frequency is 42dB and 200MHz respectively in the integrator. Additionally, center frequency of the bandpass active filter is 747kHz. And also bandwidth of the filter is 649kHz on 2V supply voltage.

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Design and analysis of a signal readout integrated circuit for the bolometer type infrared detect sensors (볼로미터형 적외선 센서의 신호처리회로 설계 및 특성)

  • Kim, Jin-Su;Park, Min-Young;Noh, Ho-Seob;Lee, Seoung-Hoon;Lee, Je-Won;Moon, Sung-Wook;Song, Han-Jung
    • Journal of Sensor Science and Technology
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    • v.16 no.6
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    • pp.475-483
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    • 2007
  • This paper proposes a readout integrated circuit (ROIC) for $32{\times}32$ infrared focal plane array (IRFPA) detector, which consist of reference resistor, detector resistor, reset switch, integrated capacitor and operational amplifier. Proposed ROIC is designed using $0.35{\;}{\mu}m$ 2P-4M (double poly four metal) n-well CMOS process parameters. Low noise folded cascode operational amplifier which is a key element in the ROIC showed 12.8 MHz unity-gain bandwidth and open-gain 89 dB, phase margin $67^{\circ}$, SNR 82 dB. From proposed circuit, we gained output voltage variation ${\Delta}17{\};mV/^{\circ}C$ when the detector resistor varied according to the temperature.

Reference white setting based on brightness of CPT and resolution (수상관의 밝기 및 해상도를 고려한 기준 백색 설정)

  • 최덕규;김주동;권기룡;안상호;이건일;송규익
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.22 no.2
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    • pp.334-343
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    • 1997
  • Reference white in color television receiver can be achieved by adjusting the RGB gun current ratio and it is necessary to provide additional gain ratio adjustment for the RGB video signal. Generally, the gun current density profile has a gaussian distribution and the gain-bandwidth product of RGB channel amplifieris constant. Therefore brightness and spatial resolution are changed with variations in reference white of receiver. In this paper, the effect of RGB gun current and channel gain ratios on brightness and resolution of CPT is analyzed. Brightness is increased with the color temperature of referenc white because of Helmholtz-kohlrausch effect. The change in ligh output is more abrupt and spatial resolution is improved with unity current ratio. For more bright and improved ressolution we also present the range of color temperature of reference white for P22 phosphors.

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Design and Fabrication of CMOS Micro Humidity Sensor System (CMOS 마이크로 습도센서 시스템의 설계 및 제작)

  • Lee, Ji-Gong;Lee, Sang-Hoon;Lee, Sung-Pil
    • Journal of the Institute of Convergence Signal Processing
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    • v.9 no.2
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    • pp.146-153
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    • 2008
  • Integrated humidity sensor system with two stages operational amplifier has been designed and fabricated by $0.8{\mu}m$ analog mixed CMOS technology. The system (28 pin and $2mm{\times}4mm$) consisted of Wheatstone-bridge type humidity sensor, resistive type humidity sensor, temperature sensors and operational amplifier for signal amplification and process in one chip. The poly-nitride etch stop process has been tried to form the sensing area as well as trench in a standard CMOS process. This modified technique did not affect the CMOS devices in their essential characteristics and gave an allowance to fabricate the system on same chip by standard process. The operational amplifier showed the stable operation so that unity gain bandwidth was more than 5.46 MHz and slew rate was more than 10 V/uS, respectively. The drain current of n-channel humidity sensitive field effect transistor (HUSFET) increased from 0.54 mA to 0.68 mA as the relative humidity increased from 10 to 70 %RH.

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Design and Performance Evaluation of MIMO Antenna for Handheld Devices (휴대 단말형 MIMO 안테나 설계 및 성능 평가)

  • Moon, Hyo-Sang;Jun, Kye-Suk;Lee, Bom-Son
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.12A
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    • pp.1233-1241
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    • 2008
  • We design, fabricate, and measure a MIMO antenna system mountable on a small PCB (such as UMPC). The proposed antenna system accommodates three radiation elements on the PCB area of $40mm\;{\times}\;100mm$. Two of them employ a slot type and one uses a modified monopole with an inverted L shape expecting high isolation and polarization purity. The bandwidth of each proposed MIMO antenna ranges from 80MHz and 200MHz at the center frequency of 1.8 GHz. The isolations between ports have been found to be greater than 10dB over the interested frequency band. Besides, the proposed MIMO system has been evaluated in terms of ARC(Active Reflection Coefficient, TARC(Total ARC), correlation, MEG, and etc. The envelope correlation is calculated to be much less than 0.04 and the ratio of the mean effective gain(MEG) between the antennas is found to be close to unity.