• Title/Summary/Keyword: unified analytical model

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A Unified Analytical One-Dimensional Surface Potential Model for Partially Depleted (PD) and Fully Depleted (FD) SOI MOSFETs

  • Pandey, Rahul;Dutta, Aloke K.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.4
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    • pp.262-271
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    • 2011
  • In this work, we present a unified analytical surface potential model, valid for both PD and FD SOI MOSFETs. Our model is based on a simplified one dimensional and purely analytical approach, and builds upon an existing model, proposed by Yu et al. [4], which is one of the most recent compact analytical surface potential models for SOI MOSFETs available in the literature, to improve its accuracy and remove its inconsistencies, thereby adding to its robustness. The model given by Yu et al. [4] fails entirely in modeling the variation of the front surface potential with respect to the changes in the substrate voltage, which has been corrected in our modified model. Also, [4] produces self-inconsistent results due to misinterpretation of the operating mode of an SOI device. The source of this error has been traced in our work and a criterion has been postulated so as to avoid any such error in future. Additionally, a completely new expression relating the front and back surface potentials of an FD SOI film has been proposed in our model, which unlike other models in the literature, takes into account for the first time in analytical one dimensional modeling of SOI MOSFETs, the contribution of the increasing inversion charge concentration in the silicon film, with increasing gate voltage, in the strong inversion region. With this refinement, the maximum percent error of our model in the prediction of the back surface potential of the SOI film amounts to only 3.8% as compared to an error of about 10% produced by the model of Yu et al. [4], both with respect to MEDICI simulation results.

Analysis of composite plates using various plate theories -Part 2: Finite element model and numerical results

  • Bose, P.;Reddy, J.N.
    • Structural Engineering and Mechanics
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    • v.6 no.7
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    • pp.727-746
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    • 1998
  • Finite element models and numerical results are presented for bending and natural vibration using the unified third-order plate theory developed in Part 1 of this paper. The unified third-order theory contains the classical, first-order, and other third-order plate theories as special cases. Analytical solutions are developed using the Navier and L$\acute{e}$vy solution procedures (see Part 1 of the paper). Displacement finite element models of the unified third-order theory are developed herein. The finite element models are based on $C^0$ interpolation of the inplane displacements and rotation functions and $C^1$ interpolation of the transverse deflection. Numerical results of bending and natural vibration are presented to evaluate the accuracy of various plate theories.

A Unified Analytical Surface Potential Model for SOI MOSFETs (SOI MOSFET의 모든 동작영역을 통합한 해석적 표면전위 모델)

  • 유윤섭
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.2
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    • pp.9-15
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    • 2004
  • We present a new unified analytical front surface potential model, which can accurately describe the transitions between the partially-depleted (PD) and the fully-depleted (FD) regimes with an analytical expression for the critical voltage V$_{c}$ delineating the PD and the FD region. It is valid in all regions of operation (from the sub -threshold to the strong inversion) and has the shorter calculation time than the iterative procedure approach. A charge sheet model based on the above explicit surface potential formulation is used to derive a single formula for the drain current valid in all regions of operation. Most of the secondary effects can be easily included in the charge sheet model and the model accurately reproduces various numerical and experimental results. No discontinuity in the derivative of the surface potential is found even though three types of smoothing functions are used. More importantly, the newly introduced parameters used in the smoothing functions do not strongly depend on the process parameter.

Unified Model for Performance Analysis of IEEE 802.11 Ad Hoc Networks in Unsaturated Conditions

  • Xu, Changchun;Gao, Jingdong;Xu, Yanyi;He, Jianhua
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • v.6 no.2
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    • pp.683-701
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    • 2012
  • IEEE 802.11 standard has achieved huge success in the past decade and is still under development to provide higher physical data rate and better quality of service (QoS). An important problem for the development and optimization of IEEE 802.11 networks is the modeling of the MAC layer channel access protocol. Although there are already many theoretic analysis for the 802.11 MAC protocol in the literature, most of the models focus on the saturated traffic and assume infinite buffer at the MAC layer. In this paper we develop a unified analytical model for IEEE 802.11 MAC protocol in ad hoc networks. The impacts of channel access parameters, traffic rate and buffer size at the MAC layer are modeled with the assistance of a generalized Markov chain and an M/G/1/K queue model. The performance of throughput, packet delivery delay and dropping probability can be achieved. Extensive simulations show the analytical model is highly accurate. From the analytical model it is shown that for practical buffer configuration (e.g. buffer size larger than one), we can maximize the total throughput and reduce the packet blocking probability (due to limited buffer size) and the average queuing delay to zero by effectively controlling the offered load. The average MAC layer service delay as well as its standard deviation, is also much lower than that in saturated conditions and has an upper bound. It is also observed that the optimal load is very close to the maximum achievable throughput regardless of the number of stations or buffer size. Moreover, the model is scalable for performance analysis of 802.11e in unsaturated conditions and 802.11 ad hoc networks with heterogenous traffic flows.

Shear-Strengthening of Reinforced & Prestressed Concrete Beams Using FRP: Part I - Review of Previous Research

  • Ary, Moustapha Ibrahim;Kang, Thomas H.K.
    • International Journal of Concrete Structures and Materials
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    • v.6 no.1
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    • pp.41-47
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    • 2012
  • Fiber-Reinforced Polymers (FRP) are used to enhance the behavior of structural components in either shear or flexure. The research conducted in this paper was mainly focused on the shear-strengthening of reinforced and prestressed concrete beams using FRP. The main objective of the research was to identify the parameters affecting the shear capacity provided by FRP and evaluate the accuracy of analytical models. A review of prior experimental data showed that the available analytical models used to estimate the added shear capacity of FRP struggle to provide a unified design equation that can predict accurately the shear contribution of externally applied FRP. In this study, the ACI 440.2R-$08^1$ model and the model developed by Triantafillou and Antonopoulos$^2$ were compared with the prior experimental data. Both analytical models failed to provide a satisfactory prediction of the FRP shear capacity. This study provides insights into potential reasons for the unsatisfactory prediction.

An Analytical Model for Deriving the 3-D Potentials and the Front and Back Gate Threshold Voltages of a Mesa-Isolated Small Geometry Fully Depleted SOI MOSFET

  • Lee, Jae Bin;Suh, Chung Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.12 no.4
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    • pp.473-481
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    • 2012
  • For a mesa-isolated small geometry SOI MOSFET, the potentials in the silicon film, front, back, and side-wall oxide layers can be derived three-dimensionally. Using Taylor's series expansions of the trigonometric functions, the derived potentials are written in terms of the natural length that can be determined by using the derived formula. From the derived 3-D potentials, the minimum values of the front and the back surface potentials are derived and used to obtain the closed-form expressions for the front and back gate threshold voltages as functions of various device parameters and applied bias voltages. Obtained results can be found to explain the drain-induced threshold voltage roll-off and the narrow width effect of a fully depleted small geometry SOI MOSFET in a unified manner.

Two-Dimensional Analytical Model for Deriving the Threshold Voltage of a Short Channel Fully Depleted Cylindrical/Surrounding Gate MOSFET

  • Suh, Chung-Ha
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.11 no.2
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    • pp.111-120
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    • 2011
  • A two-dimensional analytical model for deriving the threshold voltage of a short channel fully depleted (FD) cylindrical/surrounding gate MOSFET (CGT/SGT) is suggested. By taking into account the lateral variation of the surface potential, introducing the natural length expression, and using the Bessel functions of the first and the second kinds of order zero, we can derive potentials in the gate oxide layer and the silicon core fully two-dimensionally. Making use of these potentials, the minimum surface potential can be obtained to derive the threshold voltage as a closed-form expression in terms of various device parameters and applied voltages. Obtained results can be used to explain the drain-induced threshold voltage roll-off of a CGT/SGT in a unified manner.

Using the Analytical Hierarchy Process as a Tool for Assessing Service Quality

  • Liu, Dahai;Bishu, Ram R.;Najjar, Lotfollah
    • Industrial Engineering and Management Systems
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    • v.4 no.2
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    • pp.129-135
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    • 2005
  • Continuous quality improvement through process refinement is a must for survival of all industries in the contemporary market place. This is true for both manufacturing and service sectors. While manufacturing has spearheaded quality efforts, the service sector has lagged behind primarily because of inherent difficulties. Customer satisfaction is perhaps the most important performance measure for service quality. There are a number of quality dimensions in service quality, such as reliability, responsiveness, assurance, empathy, and tangibles. An issue of concern is ‘how can one have a unified measure of service quality across all the dimensions?' The intent of this paper is to determine if the Analytical Hierarchy Process (AHP) method could be used to derive a single quality index. AHP is a quantitative technique that structures a multi-attribute, multi-person and multi-period problem hierarchically so that solutions are facilitated. This paper presents the development of an AHP model and the derivation of a Quality Index through it. The model is used in a hypothetical case and a quality index was developed. The advantages of using such a technique are discussed.

Flexural/shear strength of RC beams with longitudinal FRP bars An analytical approach

  • Kosmidou, Parthena-Maria K.;Chalioris, Constantin E.;Karayannis, Chris G.
    • Computers and Concrete
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    • v.22 no.6
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    • pp.573-592
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    • 2018
  • An analytical methodology for the calculation of the flexural and the shear capacity of concrete members with Fibre-Reinforced-Polymer (FRP) bars as tensional reinforcement is proposed. The flexural analysis is initially based on the design provisions of ACI 440.1R-15 which have properly been modified to develop general charts that simplify computations and provide hand calculations. The specially developed charts include non-dimensional variables and can easily be applied in sections with various geometrical properties, concrete grade and FRP properties. The proposed shear model combines three theoretical considerations to facilitate calculations. A unified flexural/shear approach is developed in flow chart which can be used to estimate the ultimate strength and the expected failure mode of a concrete beam reinforced with longitudinal FRP bars, with or without transverse reinforcement. The proposed methodology is verified using existing experimental data of 138 beams from the literature, and it predicts the load-bearing capacity and the failure mode with satisfactory accuracy.

Free and forced analysis of perforated beams

  • Abdelrahman, Alaa A.;Eltaher, Mohamed A.;Kabeel, Abdallah M.;Abdraboh, Azza M.;Hendi, Asmaa A.
    • Steel and Composite Structures
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    • v.31 no.5
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    • pp.489-502
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    • 2019
  • This article presents a unified mathematical model to investigate free and forced vibration responses of perforated thin and thick beams. Analytical models of the equivalent geometrical and material characteristics for regularly squared perforated beam are developed. Because of the shear deformation regime increasing in perforated structures, the investigation of dynamical behaviors of these structures becomes more complicated and effects of rotary inertia and shear deformation should be considered. So, both Euler-Bernoulli and Timoshenko beam theories are proposed for thin and short (thick) beams, respectively. Mathematical closed forms for the eigenvalues and the corresponding eigenvectors as well as the forced vibration time response are derived. The validity of the developed analytical procedure is verified by comparing the obtained results with both analytical and numerical analyses and good agreement is detected. Numerical studies are presented to illustrate effects of beam slenderness ratio, filling ratio, as well as the number of holes on the dynamic behavior of perforated beams. The obtained results and concluding remarks are helpful in mechanical design and industrial applications of large devices and small systems (MEMS) based on perforated structure.