• Publications of The Korean Astronomical Society
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• v.15 no.spc1
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• pp.93-102
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• 2000

We have reviewed the magnetic activity in close binaries. Solar like magnetic activity indicators such as photometric spots, chromo spheric emission, coronal X-ray and radio emission, and flare activity are commonplace in many cool stars with convective envelopes. Using the UV spectra we confirmed the strength of stellar activity increases with more rapid rotation and later spectral types which corresponds to the increasing depth of the star's convective envelope. Apart from very young stellar objects such as T Tauri stars, the stars with the highest levels of activity are close binary systems composed of cool stars, i.e., the chromospherically active binaries such as RS CVn, BY Dra, W UMa and related systems. The IUE low and high dispersion spectra of V711 Tau, VW Cep and SW Lac are used for ultraviolet photometry and for a variation study of chromospheric activity. Evidence of chromospherically activity is indicated by the intensity variation of the Mg II emission line with orbital phase.

• Journal of Information Display
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• v.6 no.1
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• pp.28-32
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• 2005

The electronic structures of Al/RbF/tris-(8-hydroxyquinoline)aluminium ($Alq_3$) and $Al/CaF_2/Alq_3$interfaces were investigated using x-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). For both systems, the UPS showed a significant valence band shift following the deposition of the thin fluoride layers on $Alq_3$. However, the formation of gap state in valence region and the extra peak N 1s core level spectra showed different trends, suggesting that the alkali fluoride and alkali-earth fluoride interlayer have different reaction mechanisms at the interface between Al cathode and $Alq_3$. In addition, the deposition of Al has considerably less effect on the valence band shift compared to the deposition of both RbF and $CaF_2$. These results suggest that the charge transfer across the interface and the resulting gap state formation may have lesser effect on the enhancement of organic light-emitting device performance than the observed valence band shift, which is thought to lower the electron injection barrier.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.491-495
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• 2012

The effects of various buffer layers on the $In_2O_3$ transparent conducting films grown on glass substrates by radio-frequency reactive magnetron sputtering were investigated. The $In_2O_3$ thin films were deposited at $400^{\circ}C$ of growth temperature and 100% of oxygen flow rate. The optical, electrical, and structural and morphological properties of the $In_2O_3$ thin films subjected to buffer layers were examined by using ultraviolet-visible spectrophotometer, Hall-effect measurements, and X-ray diffractometer, respectively. The properties of $In_2O_3$ thin films showed different results, depending on the type of buffer layer. As for the $In_2O_3$ thin film deposited on ZnO buffer layer, the average transmittance was 89% and the electrical resistivity was $7.4{\times}10^{-3}\;{\Omega}cm$. The experimental results provide a way for growing the transparent conducting film with the optimum condition by using an appropriate buffer layer.

• Fibers and Polymers
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• v.2 no.2
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• pp.108-115
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• 2001

Vinyl acetate was polymerized in ultraviolet-ray initiated bulk system at low temperatures using 2,2-azobis(2,4-dimethylvaleronitrile) (ADMVN) or 2,2-azobis(isobutyronitrile) (AIBN) as the photoinitiator, respectively. High molecular weight (HMW) poly(vinyl alcohol) (PVA) having number-average degree of polymerization ($P_n$) of 3,900-7,800 and syndiotactic diad (S-diad) content of 52.5-54.0% could be prepared by complete saponification of synthesized linear poly(vinyl acetate) (PVAc) having $P_n$ 5,900-9,400 obtained at conversion of below 30%. $P_n$ of PVA using ADMVN was larger than that of PVA using AIBN. On the other hand, conversion of the former was smaller than that of the latter, and it was found that the initiation rate of the ADMVN was lower than that of AIBN. This could be explained by a fact that the rate of photolysis of AIBN is faster than that of ADMVN due to the higher quantum yield or dissociation rate constant of AIBN than that of ADMVN. The $P_n$, syndiotacticity, and whiteness of PVA from PVAc polymerized at lower temperatures were superior to those of PVA from PVAc polymerized at higher temperatures.

• Elastomers and Composites
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• v.50 no.1
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• pp.7-12
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• 2015

The $BaCrO_4$ nanoparticles were synthesized from a 0.1 M $K_2CrO_4$ and 0.1 M $BaCO_3$ solution with stirring for 10 h. The product was washed several times with acetone and heated to $700^{\circ}C$ for 6 h. At that time, the color of mixture was a greenish yellow. The graphene/$BaCrO_4$ nanocomposites were prepared with graphene and $BaCrO_4$ nanoparticles by stirring in tetrahydrofuran and heated in an electric furnace at $700^{\circ}C$ for 2 h. The $BaCrO_4$ nanoparticles, graphene/$BaCrO_4$ and heated graphene/$BaCrO_4$ nanocomposites were characterized by X-ray diffraction, scanning electron microscopy and transmission electron microscopy. The graphene/$BaCrO_4$ nanocomposites and heated graphene/$BaCrO_4$ nanocomposites were evaluated as a photocatalyst and discussed about kinetics study for the degradation of organic dyes, such as methylene blue and rhodamine B under ultraviolet light irradiation at 254 nm.

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.374-386
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• 2019

A process for nitrogen doping of TiO₂ ceramics was developed, whereby polycrystalline titania particles were prepared at 450-1000℃ with variation of the firing schedule under N₂ atmosphere. The effect of nitrogen doping on the polycrystallites was investigated by X-ray diffraction (XRD) and Raman analysis. The microstructure of the TiO₂ ceramics changed with variation of the firing temperature and the firing atmosphere (N₂ or O₂). The microstructural changes in the nitrogen-doped TiO₂ ceramics were closely related to changes in the Raman spectra. Within the evaluated temperature range, the nitrogen-doped titania ceramics comprised anatase and/or rutile phases, similar to those of titania ceramics fired in air. Infiltration of nitrogen gas into the titania ceramics was analyzed by Raman spectroscopy and XRD analysis, showing a considerable change in the profiles of the N₂-doped TiO₂ ceramics compared with those of the TiO₂ ceramics fired under O₂ atmosphere. The nitrogen doping in the anatase phase may produce active sites for photocatalysis in the visible and ultraviolet regions.

• Journal of the Korean earth science society
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• v.23 no.1
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• pp.52-58
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• 2002

A colorless and transparent zirconium oxide ($Zr_{0.73}Y_{0.27}O_{1.87}$) crystal has been synthesized by the Bridgman-Stockbager method. The gem-quality material is produced by adding 20${\sim}$25 wt.% $Y_2O_3$ (stabilizer) and 0.04 wt.% $Nd_2O_3$ (decolorising agent) to the $ZrO_2$ powder. It shows a vitreous luster with a slight oily appearance. Under a polarizing microscope, it shows isotropic nature with no appreciable anisotropism. Mohs hardness value and specific gravity is measured to be 8${\sim}$$8{\frac{1}{2}}$ and 5.85, respectively. Under ultraviolet light it shows a faint white glow. The crystal structure of yttria-stabilized zirconia with 0.27 at.% Y has been re-investigated, using single crystal X-ray diffraction, and confirmed to be a cubic symmetry, space group $Fm{\overline{3}}m$ ($O^5_h$) with a=5.1552(5) ${{\AA}}$, V=136.99(5) ${{\AA}}^3$, Z=4. The stabilizer atoms randomly occupy the zirconium sites and there are displacements of oxygen atoms with amplitudes of ${\Delta}/a{\sim}$0.033 and 0.11 along <110> and <111> from the ideal positions of the fluorite structure, respectively.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.67 no.2
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• pp.106-111
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• 2018

Recently, due to the effect of global warming, the high temperature phenomenon continues, and the time for workers exposed to high temperature, cold and infrared is increasing and then safety is threatened. Due to the nature of on-site work, the work is being carried out in an unreasonable manner due to the process, which is exposed to disasters due to high temperature and cold. Even though the injured skin may be damaged, the worker may not be aware of it and may be injured. By understanding the working environment of the worker and calculating the risk index and expressing it on the helmet, the surrounding colleagues inform the worker of the risk and take appropriate measures so that the accident can be prevented in advance. This study was conducted to investigate the effect of exposure duration on the workers' by measuring the exposure time, the risk index is displayed in the form of a traffic light to the helm, informing neighboring workers and managers, and transmitting to the workers by voice.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.72-72
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• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.