• 제목/요약/키워드: ultra-thin films

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BaMgF$_{4}$ 를 이용한 금속-강유전체박막-실리콘(MFS) 구조의 특성 (Properties of metal-ferroelectric thin film-silicon(MFS) structure using BaMgF$_{4}$)

  • 김광호;김제덕;유병곤
    • 전자공학회논문지A
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    • 제33A권5호
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    • pp.102-107
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    • 1996
  • Use of a rapid thermal annealing (RTA) technique is shown to improve the properties of metal-ferroelectric BaMgF$_{4}$-silicon structures. The fluoride film was deposited in an ultra-high vacuum system at asubstrate temperature of 300$^{\circ}C$. A post-deposition annelaing was conducted for 10 seconds at 600.deg. C in a vacuum of 0.1 Torr, using a home-made RTA apparatus. The results showed that the resistivity of the ferroelectric BaMgF$_{4}$ film from a typical value of 1-2${\times}10^{11}{\Omega}{\cdot}cm$ before the annealing to about 5${\times}10^{13}{\Omega}{\cdot}cm$ and reduce the interface state density of the BaMgF$_{4}$/Si interface to about 8${\times}10^{10}cm^{2}{\cdot}$eV. Ferroelectric hysteresis measurements using a sawyer-tower circuit yielded remanent polarization and coercive field values of about 0.5$\mu$C/cm$^{2}$ and 80 kV/cm, respectively. the typical remanent polarization of the BaMgF$_{4}$ films ont he (100) and (111) oreientated silicon wafers were 0.5 - 0.6 $\mu$C/cm$^{2}$ and that of th efilms on the (110) wafers was 1.2$^{\circ}C$/cm$^{2}$.

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Fabrication of SOI FinFET Devices using Arsenic Solid-phase-diffusion

  • Cho, Won-Ju;Koo, Hyun-Mo;Lee, Woo-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • 한국전기전자재료학회논문지
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    • 제20권5호
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    • pp.394-398
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    • 2007
  • A simple doping method to fabricate a very thin channel body of the nano-scaled n-type fin field-effect-transistor (FinFET) by arsenic solid-Phase-diffusion (SPD) process is presented. Using the As-doped spin-on-glass films and the rapid thermal annealing for shallow junction, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. The n-type FinFET devices with a gate length of 20-100 nm were fabricated by As-SPD and revealed superior device scalability.

나노구조 덴드리머의 광변위특성 (Photo Displacement Properties of Nano structure Organic Ultra Thin Films)

  • 송진원;최영일;조수영;김덕태;이우기;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집
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    • pp.23-26
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    • 2004
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems promising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current(MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.

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나노구조 유기초박막의 광변위특성 (Photo Displacement Properties of Nano structure Organic Ultra Thin Films)

  • 송진원;최영일;조수영;김영근;이경섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.468-471
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    • 2004
  • Monolayers of lipids on a water surface have attracted much interest as models of biological membranes, but also as precursors of multilayer systems premising many technical applications. Until now, many methodologies have been developed in order to gain a better understand. Photoisomerization in monolayers of a novel azobenzene compound, azobenzene dendrimer, was investigated for the first time by means of the absorption spectrum and Maxwell displacement current (MDC) technique. Dendrimers are well-defined macromolecules exhibiting a tree-like structure, first derived by the cascade molecule approach. According to the absorption spectrum, trans-to-cis conversion ratio was estimated to the third generation of azobenzene dendrimer deposited onto a glass substrate. Temperature-dependent induced charge with trans-cis isomerization was also measured by means of MDC technique.

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마찰력현미경을 이용한 나노스케일 마멸시험 시 다이아몬드 탐침으로의 MoS2 마멸입자 전이현상 (Material Transfer of MoS2 Wear Debris to Diamond Probe Tip in Nanoscale Wear test using Friction Force Microscopy)

  • 송현준;임형우;성권일;안효석
    • Tribology and Lubricants
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    • 제35권5호
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    • pp.286-293
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    • 2019
  • In friction and wear tests that use friction force microscopy (FFM), the wear debris transfer to the tip apex that changes tip radius is a crucial issue that influences the friction and wear performances of films and coatings with nanoscale thicknesses. In this study, FFM tests are performed for bilayer $MoS_2$ film to obtain a better understanding of how geometrical and chemical changes of tip apex influence the friction and wear properties of nanoscale molecular layers. The critical load can be estimated from the test results based on the clear distinction of the failure area. Scanning electron microscopy and energy-dispersive spectroscopy are employed to measure and observe the geometrical and chemical changes of the tip apex. Under normal loads lower than 1000 nN, the reuse of tips enhances the friction and wear performance at the tip-sample interface as the contact pair changes with the increase of tip radius. Therefore, the reduction of contact pressure due to the increase of tip radius by the transfer of $MoS_2$ or Mo-dominant wear debris and the change of contact pairs from diamond/$MoS_2$ to partial $MoS_2$ or Mo/$MoS_2$ can explain the critical load increase that results from tip reuse. We suggest that the wear debris transfer to the tip apex should be considered when used tips are repeatedly employed to identify the tribological properties of ultra-thin films using FFM.

스퍼터링법으로 증착된 초박형 Al 박막의 투명전극 적용성 연구 (Ultra-thin aluminum thin films deposited by DC magnetron sputtering for the applications in flexible transparent electrodes)

  • 김대균;최두호
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.82-82
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    • 2018
  • 광전소자용 투명전극으로 적용하기 위한 초박형 Al 박막에 대해서 기초연구를 수행하였다. 증착 전 챔버(chamber) 내 기저압력은 $3{\times}10^{-7}Torr$이하로 유지하였으며 Ar 불활성 기체의 유입을 통해 작업압력을 $1{\times}10^{-2}Torr$로 상승시켜 증착을 실시하였다. DC 마그네트론 스퍼터링법을 이용하여 유리기판상에 Al 박막의 증착을 실시하였으며, 박막의 두께가 3-12 nm인 Al 박막을 각각 형성하였다. 두께가 7 nm 일 때 면저항은 $135{\Omega}/{\square}$로 측정되었고 7 nm 이상인 두께의 박막은 두께가 증가할 때 면저항이 점진적으로 감소되는 경향을 확인할 수 있었다. 두께가 10 nm인 박막의 측정된 면저항은 $13.1{\Omega}/{\square}$로 두께 7 nm인 박막과 비교하였을 때 약 10배의 차이를 확인할 수 있었다. 두께 6 nm 이하인 박막은 면저항 측정이 불가능하였는데 이는 SEM 분석 결과, 연속박막을 이루지 못 하였기 때문이라고 결론을 내릴 수 있었으며, 두께 12 nm인 박막까지 완전한 연속박막이 형성되지 않았다. 각각의 박막에서 입자의 크기는 선 교차법(line intercept method)을 이용하여 시편당 평균 120개의 입자에 대한 평균값을 측정하였으며, 이론적으로 예상할 수 있는 바와 같이 두께가 증가할수록 입자크기도 비례하여 증가하게 되는 것을 확인할 수 있었다. 가시광선 파장영역 내 투과도의 경우, 3 nm 두께에서 평균 80% 이상의 투과도가 측정된 데 반하여, 4-5 nm 두께에서 평균 60%로 급격하게 감소되기 시작하며 그 이후, 두께 증가에 따라 투과도가 점진적으로 감소되는 경향을 확인할 수 있었다. 또한 Al 박막은 시간의 경과에 따른 표면의 산화가 진행되어 기존에 측정된 면저항보다 10-60%의 면저항이 증가하였는데 이는 두께가 얇을수록 더 산화의 영향을 많이 받기 때문에 나타난 결과로 보인다. 추후 산화방지막 및 빛반사방지막 층을 초박형 Al박막과 함께 Oxide/Metal/Oxide 구조로 형성하여 위와 같은 현상들을 해결하고 박막물성의 증진을 통해 투명전극에 적용을 목표로 한다.

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Memory Effect of $In_2O_3$ Quantum Dots and Graphene in $SiO_2$ thin Film

  • Lee, Dong Uk;Sim, Seong Min;So, Joon Sub;Kim, Eun Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.240.2-240.2
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    • 2013
  • The device scale of flash memory was confronted with quantum mechanical limitation. The next generation memory device will be required a break-through for the device scaling problem. Especially, graphene is one of important materials to overcome scaling and operation problem for the memory device, because ofthe high carrier mobility, the mechanicalflexibility, the one atomic layer thick and versatile chemistry. We demonstrate the hybrid memory consisted with the metal-oxide quantum dots and the mono-layered graphene which was transferred to $SiO_2$ (5 nm)/Si substrate. The 5-nm thick secondary $SiO_2$ layer was deposited on the mono-layered graphene by using ultra-high vacuum sputtering system which base pressure is about $1{\times}10^{-10}$ Torr. The $In_2O_3$ quantum dots were distributed on the secondary $SiO_2$2 layer after chemical reaction between deposited In layer and polyamic acid layer through soft baking at $125^{\circ}C$ for 30 min and curing process at $400^{\circ}C$ for 1 hr by using the furnace in $N_2$ ambient. The memory devices with the $In_2O_3$ quantum dots on graphene monolayer between $SiO_2$ thin films have demonstrated and evaluated for the application of next generation nonvolatile memory device. We will discuss the electrical properties to understating memory effect related with quantum mechanical transport between the $In_2O_3$ quantum dots and the Fermi level of graphene layer.

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이온화된 소금물을 이용한 ASA 구조의 고 투명 평면형 다이폴 안테나 (High Transparent Planar Dipole Antenna using Ionized Salt-water of ASA Structure)

  • 판쥐뚱;정창원
    • 한국산학기술학회논문지
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    • 제22권3호
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    • pp.492-498
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    • 2021
  • 본 논문에서는 액체 소금물을 전도체로써 이용한 평면형 투명 안테나의 구현 가능성을 연구 하였다. 소금물을 이용한 투명 안테나 구현의 가장 큰 이유는 기존 고체 투명전극의 광투과도 indium tin oxide (ITO:> 73%) 또는 multi-layer films (MLF: > 78%) 대비 높은 소금물의 광투과도 (> 95% @ 40 ppt)에 있다. 제안된 다이폴안테나의 양쪽 팔의 소금물 층을 평면형으로 고정하기 위해 투명 아크릴(��r = 2.61, tan�� = 0.01, OTav > 90 %)을 사용하였으며, 소금물의 표면장력을 이용하여 (ASA: 아크릴/소금물/아크릴) 형태의 평면형 ASA층으로 구현 하였다. 전기적, 광학적으로 ASA 전도체 구조를 분석하기 위해, 표면장력을 통한 평면형 구조 유지 시, 소금물 두께에 따른 면저항과 광투과도를 분석 하였다. 소금물을 이용한 투명 평면형 다이폴 안테나는 UHF(Ultra high frequency) 대역(470-771 MHz)에서 1.72 dBi의 평균 방사이득 및 74 %의 방사효율을 가지며, 향후 소금물을 이용한 평면형 투명안테나로써의 활용 가능성을 확인 하였다.

Luminous Characteristics of Transparent Field Emitters Produced by Using Ultra-thin Films of Single Walled Carbon Nanotubes

  • Jang, Eun-Soo;Goak, Jeung-Choon;Lee, Han-Sung;Lee, Seung-Ho;Lee, Nae-Sung
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2009년도 춘계학술발표대회
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    • pp.31.1-31.1
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    • 2009
  • Carbon nanotubes (CNTs) are attractive material because of their superior electrical, mechanical, and chemical properties. Furthermore, their geometric features such as a large aspect ratio and a small radius of curvature at tip make them ideal for low-voltage field emission devices including backlight units of liquid crystal display, lighting lamps, X-ray source, microwave amplifiers, electron microscopes, etc. In field emission devices for display applications, the phosphor anode is positioned against the CNT emitters. In most case, light generated from the phosphor by electron bombardment passes through the anode front plate to reach observers. However, light is produced in a narrow depth of the surface of the phosphor layer because phosphor particles are big as much as several micrometers, which means that it is necessary to transmit through the phosphor layer. Hence, a drop of light intensity is unavoidable during this process. In this study, we fabricated a transparent cathode back plate by depositing an ultra-thin film of single walled CNTs (SWCNTs) on an indium tin oxide (ITO)-coated glass substrate. Two types of phosphor anode plates were employed to our transparent cathode back plate: One is an ITO glass substrate with a phosphor layer and the other is a Cr-coated glass substrate with phosphor layer. For the former case, light was radiated from both the front and the back sides, where luminance on the back was ~30% higher than that on the front in our experiments. For the other case, however, light was emitted only from the cathode back side as the Cr layer on the anode glass rolled as a reflecting mirror, improving the light luminance as much as ~60% compared with that on the front of one. This study seems to be discussed about the morphologies and field emission characteristics of CNT emitters according to the experimental parameters in fabricating the lamps emitting light on the both sides or only on the cathode back side. The experimental procedures are as follows. First, a CNT aqueous solution was prepared by ultrasonically dispersing purified SWCNTs in deionized water with sodium dodecyl sulfate (SDS). A milliliter or even several tens of micro-liters of CNT solution was deposited onto a porous alumina membrane through vacuum filtration. Thereafter, the alumina membrane was solvated with the 3 M NaOH solution and the floating CNT film was easily transferred to an ITO glass substrate. It is required for CNT film to make standing CNTs up to serve as electron emitter through an adhesive roller activation.

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Micro/Nanotribology and Its Applications

  • Bhushan, Bharat
    • Tribology and Lubricants
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    • 제11권5호
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    • pp.128-135
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    • 1995
  • Atomic force microscopy/friction force microscopy (AFM/FFM) techniques are increasingly used for tribological studies of engineering surfaces at scales, ranging from atomic and molecular to microscales. These techniques have been used to study surface roughness, adhesion, friction, scratching/wear, indentation, detection of material transfer, and boundary lubrication and for nanofabrication/nanomachining purposes. Micro/nanotribological studies of single-crystal silicon, natural diamond, magnetic media (magnetic tapes and disks) and magnetic heads have been conducted. Commonly measured roughness parameters are found to be scale dependent, requiring the need of scale-independent fractal parameters to characterize surface roughness. Measurements of atomic-scale friction of a freshly-cleaved highly-oriented pyrolytic graphite exhibited the same periodicity as that of corresponding topography. However, the peaks in friction and those in corresponding topography were displaced relative to each other. Variations in atomic-scale friction and the observed displacement has been explained by the variations in interatomic forces in the normal and lateral directions. Local variation in microscale friction is found to correspond to the local slope suggesting that a ratchet mechanism is responsible for this variation. Directionality in the friction is observed on both micro- and macro scales which results from the surface preparation and anisotropy in surface roughness. Microscale friction is generally found to be smaller than the macrofriction as there is less ploughing contribution in microscale measurements. Microscale friction is load dependent and friction values increase with an increase in the normal load approaching to the macrofriction at contact stresses higher than the hardness of the softer material. Wear rate for single-crystal silicon is approximately constant for various loads and test durations. However, for magnetic disks with a multilayered thin-film structure, the wear of the diamond like carbon overcoat is catastrophic. Breakdown of thin films can be detected with AFM. Evolution of the wear has also been studied using AFM. Wear is found to be initiated at nono scratches. AFM has been modified to obtain load-displacement curves and for nanoindentation hardness measurements with depth of indentation as low as 1 mm. Scratching and indentation on nanoscales are the powerful ways to screen for adhesion and resistance to deformation of ultrathin fdms. Detection of material transfer on a nanoscale is possible with AFM. Boundary lubrication studies and measurement of lubricant-film thichness with a lateral resolution on a nanoscale have been conducted using AFM. Self-assembled monolyers and chemically-bonded lubricant films with a mobile fraction are superior in wear resistance. Finally, AFM has also shown to be useful for nanofabrication/nanomachining. Friction and wear on micro-and nanoscales have been found to be generally smaller compared to that at macroscales. Therefore, micro/nanotribological studies may help def'me the regimes for ultra-low friction and near zero wear.