• Journal of the Korean Magnetics Society
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• v.4 no.1
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• pp.1-6
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• 1994

The magnetization dynamics was investigated by solving possible origins of overdamped susceptibility observed in ultra-soft magnetic amorphous thin films. The experimental high frequency spectrum and computational spectrum calculated from Gilbert's equation of motion were compared in order to find proper damping factor $\alpha{\approx}20$ and demagnetizing coefficients $D_{x}{\approx}D_{y}{\approx}D_{z}{\approx}0$ for ultra-soft magnetic films. A magnetization vortex mode was, then, proposed to explain the origin of the reversible susceptibility and other anomalies of the ultra-soft magnetic heterogeneous thin films. In this mode it is suggested that there occur, within the nanoscale structural features of the ultra-soft films, incoherent rotational spin motions that are highly damped by the energy transfer from short wavelength spin wave modes and local defect structure mode interactions.

• Journal of the Semiconductor & Display Technology
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• v.19 no.4
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• pp.84-87
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• 2020

The properties of ultra-thin two-dimensional (2D) organic ferroelectric Langmuir-Blodgett (LB) films of the poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] were investigated to find possible applicability in flexible and wearable electronics applications. In the C-V characteristics of the MFM capacitor of 2-monolayer of 5 nm films, a butterfly hysteresis curve due to the ferroelectricity of P(VDF-TrFE) was confirmed. Typical residual polarization value was measured at 2μC/㎠. When the MFM capacitor with ultra-thin ferroelectric film was measured by applying a 10 Hz bipolar pulse, it was shown that 65% of the initial polarization value in 105 cycles deteriorated the polarization. The leakage current density of the 2-monolayer film was maintained at about 5 × 10-8 A/㎠ for the case at a 5MV/cm electric field. The resistivity of the 2-monolayer film in the case at an electric field at 5 MV/cm was more than 2.35 × 1013 Ω·cm.

• Macromolecular Research
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• v.10 no.5
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• pp.273-277
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• 2002

Ultra-thin polymer films containing cobalt(II) meso-tetraphenylporphyrin(CoTPP) have been prepared by vacuum codeposition of the metal complex and trans-2-butene as an organic monomer using an inductively coupled RF glow discharge operating at 7-9 Watts. The polymer films were characterized by sorption measurements. Sorption data obtained for polymer films containing CoTPP indicate that the CoTPP molecules are capable of reversibly binding oxygen molecules. It was found that the adjacent CoTPP molecules in the aggregated metal complex phase could irreversibly share the oxygen molecules. A dispersion of the metal complex molecules in the polymer matrix was made to maintain the reversible reactivity of the metal complex molecules with oxygen in the polymer films via vacuum evaporation process. The Henry mode solubility constant, the Langmuir mode capacity constant, the amount of binding oxygen, and the dissociation equilibrium in the dual mode sorption theory were discussed.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.121-124
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• 1990

In this paper, we study the electrical conduction mechanism in Langmuir-Blodgett(LB) ultra thin films. The LB device was a metal/LB films/metal sandwich structure, where metal is electrode. In our experiments, the temperature depend on the current at above $0^{\circ}C$. This phenomena show that the electrical conduction current is a schottky current inherent to LB ultra thin films.

• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.31-36
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• 1991

Structural and compositional heterogeneities of sputter deposited, amorphous $Co_{87}Zr_{4}NB_{9}$ thin films were investigated using TEM and EDS with windowless detector. The films deposited with substrate bias and annealed in rotating magnetc field showed two amorphous phases of Co-rich region and (ZrNb)oxide-rich region, and revealed 'ultra-soft' magnetic properties. Revesible bias-responses and overdamped frequency responses, along with small Hc, Hk and Mr/Ms ratio, give the possibility of ultra-soft magnetic behavior fo CoZrNb thin films. We proposed the vortex type magnetization distribution in remanent state which was correlated with the thin film heterogeneity. Then, the ultra-soft characteristics of the compositionally heterogeneous films were explained by the spin vortices that minimized the total magnetostatic and exchange coupling energies.

• Applied Science and Convergence Technology
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• v.25 no.2
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• pp.32-35
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• 2016

Using conventional deposition techniques, we demonstrate a method to fabricate ultra-smooth 10 nm silver films without using a wetting layer or co-depositing another material. The argon working pressure plays a crucial role in achieving an excellent surface flatness for silver films deposited by DC magnetron sputtering on an InP substrate. The formation of ultra-smooth silver thin films is very sensitive to the argon pressure. At the optimum deposition condition, a uniform silver film with an rms surface roughness of 0.81 nm has been achieved.

• Journal of the Korean Applied Science and Technology
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• v.26 no.1
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• pp.102-108
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• 2009

Behaviors of saturated fatty acid halides (CI4, C16, C18) were measured by LB method when the molecules were stimulated by pressure. The saturated fatty acid halides were deposited on the indium tin oxide(lTO) glass by the LB method. The average organic ultra thin film size and the surface roughness of the fatty acid halides thin films were investigated using AFM. It was found that AFM images show small surface roughness ($2.5{\sim}5.0\;nm$) and the organic ultra thin film size of $2.5{\sim}12\;nm$. Both aggregations and pin-holes were also seen on the AFM images. However we found that the surface roughness. These effects seem to be reasonable to be related to the increase of the organic ultra thin film size of fatty acid halides.

• Journal of the Korean Applied Science and Technology
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• v.23 no.3
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• pp.238-242
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• 2006

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electric conduction mechanism of PI Ultra-Thin Films was investigated at room temperature. At low electric field, ohmic conduction $(I{\propto}V)$ was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}\;S/cm$. At high electric field, nonohmic conduction $(I{\propto}V^2)$ was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of PI Ultra-Thin Films was about 7.0.

• Journal of the Korean Applied Science and Technology
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• v.12 no.2
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• pp.131-136
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• 1995

Ultra-thin films of hexyltriphenylphosphonium-TCNQ(1:1) complex were formed on various substrates by Langmuir-Blodgett technique, where hexyltriphenylphosphonium-TCNQ(1:1) complex was synthesized by attaching hexyltriphenylphosphonium group to TCNQ. The reaction product was identified with FT-IR, and UV-Vis absorption spectroscopies. The formation of ultra-thin films of hexyltriphenylphosphonium-TCNQ(1:1) complex was confirmed also by FT-IR, and UV/Vis absorption spectroscopies.

• Proceedings of the IEEK Conference
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• 1998.06a
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• pp.343-346
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• 1998

Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.