• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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• pp.846-850
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• 2003

Thin film $SnO_2$ Gas Sensor was fabricated by using ion beam sputtering and ultra thin film Pt catalyst of $45{\AA}$ was deposited on $SnO_2$ thin film. The effects of annealing temperature on the structural properies of $SnO_2$ were investigated using the X-ray diffraction. Using SEM, microstructures of thin film were investigated. The good gas sensitivity is shown when annealing condition is $650^{\circ}C$, 5hr and ultra thin film Pt catalyst thickness is $45{\AA}$.

• E2M - 전기 전자와 첨단 소재
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• 제8권2호
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• pp.184-189
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• 1995

The electrical property of ultra thin PVA films(several hundreds .angs.-several .mu.m in thickness) formed by sphere bulb blowing technique, has been studied. The electrical conductivity of relatively thick films(>several thousands .angs.) has been very high and enhanced by the exposure either to high humidity of air or $NH_3$, which can be explained in terms of the role of ionic transport. The use of PVA films as NH$_{3}$ sensor is also proposed. In ultra thin PVA films less than 1500.angs., two conducting states ; high conducting and low conducting states, are observed. The nonlinear current-voltage characteristics in the low conducting state and the switching between these two states are also confirmed. These properties are discussed in terms of electronic conduction processes. The breakdown strength of the ultra thin PVA film is found to be very high(-30MV/cm), supporting the electron avalanche process in a thick polymer films.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1744-1746
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• 1999

In this paper, we give pressure stimulation into organic ultra thin films and detected the induced displacement current properties, and then manufacture a device under the accumulation condition. In processing of a device manufacture, we can see the process is good from the change of a surface pressure and transfer ratio of area per molecule of organic ultra thin films. The structure of manufactured device is MIM(Au/polyimide LB films/AU), the number of accumulated 19 layers. I-V characteristic of the device is measured from -5[V] to +5[V]. The maximum value of measured current is increased as the number of accumulated layers are decreased. The insulation of a thin film is better as the interval between electrodes is larger, and the insulation properties of a thin film is better as the distance between electrodes is larger.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.175-178
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• 1988

A film is fabricated by depositing several sliced organic ultra thin films on a slide glass. Both UV-absorbance and the capacitance of a multi - layered organic ultra thin film with (N-docosyl pyridinium)-TCNQ(1:2) complex have a desired value on the condition of well alignment in depositing several layers. Forethermore the conductivity of this film measured by the direction of either horizontal or vertical axis. respectively, is results in a quite different value.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제16회 학술발표회 논문개요집
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• pp.93-93
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• 1998

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제34회 동계학술대회 초록집
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• pp.277-277
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• 2008

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
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• pp.51-51
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• 2008

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.45-49
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• 1999

이온빔 보조 증착법을 이용하여 제작한 $SnO_2$박막을 기저 물질로한 가연성 센서에 catalyst로 ultra-thin Pd layer를 이온빔 스퍼터링으로 흡착시켰다. 가연성 기체의 센싱 메카니즘에서 Pd 촉매의 역할을 정확하게 조사하기 위해서 진공 및 공기 상에서 annealing 함으로서 Pd 촉매의 초기 산화 상태를 조절하였다. 촉매가 순수한 금속 Pd 클러스터 상태로 존재하는 $SnO_2$센서의 경우에는 PdO 클러스터가 있는 것에 비해 높은 감응성을 보였다. 이것은 PdO 클러스터가 표면 acceptor로 작용을 하는 것으로 생각되며 $SnO_2$로 부터 Pd sub-channel을 통해 전자를 받아 센서의 감도를 낮추고 응답시간을 늦추는 것으로 생각된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.248-248
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• 2007

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 하계학술대회 논문집
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• pp.244-246
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• 1991

Recently, a study on LB ultra thin film of molecular size is widely performed. To make use of LB ultra thin film in engineering applications, it is important to investigate how uniformly Langmuir film is deposited on a substrate. In this paper, to confirm the uniformity of film deposition, the relation between the monolayer numbers deposited and its ratio is investigated by deposition of the Y type and Hetero type LB film. If films are deposited ideally, the deposition ratio will become 1.0. From the experimental results, it can be suggested that the deposition of LB film is done well, as we obtained an approximate value 1.0 by the calculation of deposition ratio of L film area and LB film deposition area.