• Title/Summary/Keyword: two-dimensional electron gas

Search Result 76, Processing Time 0.02 seconds

Impedance-Based Characterization of 2-Dimenisonal Conduction Transports in the LaAlO3/SrxCa1-xTiO3/SrTiO3 systems

  • Choi, Yoo-Jin;Park, Da-Hee;Kim, Eui-Hyun;Park, Chan-Rok;Kwon, Kyeong-Woo;Moon, Seon-Young;Baek, Seung-Hyub;Kim, Jin-Sang;Hwang, Jinha
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2016.02a
    • /
    • pp.171.2-171.2
    • /
    • 2016
  • The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.

  • PDF

3D Simulation on Polarization Effect in AlGaN/GaN HEMT (AlGaN/GaN HEMT의 분극 현상에 대한 3D 시뮬레이션)

  • Jung, Kang-Min;Kim, Jae-Moo;Kim, Hee-Dong;Kim, Dong-Ho;Kim, Tae-Geun
    • Journal of the Institute of Electronics Engineers of Korea SD
    • /
    • v.47 no.10
    • /
    • pp.23-28
    • /
    • 2010
  • In this paper, we investigated the polarization effects on the electrical and structural characteristics of AlGaN/GaN HEMT. Both the Al mole-fraction and the barrier thickness of AlGaN, which determine the profiles of a two-dimensional electron gas, were simulated to obtain the optimum HEMT structure affecting the polarization effect. As a results, we found that the amount of bound sheet charges was increased by 16% and the maximum drain current density ($I_D$,max) was increased by more than 37%, while AI mole fractions are changed from 0.3 to 0.4. We also observed a 37% improvement in maximum drain current density ($I_D$,max) by increasing AIGaN layer thickness from 17 to 38 nm. However when AlGaN layer thickness reached the critical thickness, DC characteristics were dramatically lowered due to 'bulk' relaxation in AlGaN layer.

Effect of Al2O3 Surface Passivation by Thermal Oxidation of Aluminum for AlGaN/GaN Structure (Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al2O3 패시베이션 효과)

  • Kim, Jeong-Jin;Ahn, Ho-Kyun;Bae, Seong-Bum;Pak, Young-Rak;Lim, Jong-Won;Moon, Jae-Kyung;Ko, Sang-Chun;Shim, Kyu-Hwan;Yang, Jeon-Wook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.25 no.11
    • /
    • pp.862-866
    • /
    • 2012
  • Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

Characterization of SiC nanowire Synthesized by Thermal CVD (열 화학기상증착법을 이용한 탄화규소 나노선의 합성 및 특성연구)

  • Jung, M.W.;Kim, M.K.;Song, W.;Jung, D.S.;Choi, W.C.;Park, C.J.
    • Journal of the Korean Vacuum Society
    • /
    • v.19 no.4
    • /
    • pp.307-313
    • /
    • 2010
  • One-dimensional cubic phase silicon carbide nanowires (${\beta}$-SiC NWs) were efficiently synthesized by thermal chemical vapor deposition (TCVD) with mixtures containing Si powders and nickel chloride hexahydrate $(NiCl_2{\cdot}6H_2O)$ in an alumina boat with a carbon source of methane $(CH_4)$ gas. SEM images are shown that the growth temperature (T) of $1,300^{\circ}C$ is not enough to synthesize the SiC NWs owing to insufficient thermal energy for melting down a Si powder and decomposing the methane gas. However, the SiC NWs could be synthesized at T>$1,300^{\circ}C$ and the most efficient temperature for growth of SiC NWs is T=$1,400^{\circ}C$. The synthesized SiC NWs have the diameter with an average range between 50~150 nm. Raman spectra clearly revealed that the synthesized SiC NWs are forming of a cubic phase (${\beta}$-SiC). Two distinct peaks at 795 and $970 cm^{-1}$ in Raman spectra of the synthesized SiC NWs at T=$1,400^{\circ}C$ represent the TO and LO mode of the bulk ${\beta}$-SiC, respectively. XRD spectra are also supported to the Raman spectra resulting in the strongest (111) peaks at $2{\Theta}=35.7^{\circ}$, which is the (111) plane peak position of 3C-SiC. Moreover, the gas flow rate of 300 sccm for methane is the optimal condition for synthesis of a large amount of ${\beta}$-SiC NW without producing the amorphous carbon structure shown at a high methane flow rate of 800 sccm. TEM images are shown two kinds of the synthesized ${\beta}$-SiC NWs structures. One is shown the defect-free ${\beta}$-SiC NWs with a (111) interplane distance of 0.25 nm, and the other is the stacking-faulted ${\beta}$-SiC NWs. Also, TEM images exhibited that two distinct SiC NWs are uniformly covered with $SiO_2$ layer with a thickness of less 2 nm.

Structural Evolution on Ag/Si(111) Ag/Si(111)√3X√3 with Adatom Coverage (흡착원자의 덮임율에 따른 Ag/Si(111)√3X√3의 구조 변화)

  • Jeong, Ho-Jin;Jeong, Suk-Min
    • Journal of the Korean Vacuum Society
    • /
    • v.17 no.5
    • /
    • pp.387-393
    • /
    • 2008
  • Using a first-principles total-energy method, we investigate structural and energy changes on Ag/Si(111)$\sqrt{3}{\times}\sqrt{3}$($\sqrt{3}-Ag$ hereafter) as the number of the additional Ag adatoms increases. The Ag coverage varies from 0.02 to 0.14 ML. Most Ag adatoms occupy the ST site, which is the center of small triangles of the substrate Ag layer that is composed of small and large triangles. One of the interesting adsorption features is that the adatoms immerse below the substrate layer. The total energy calculations show that the clusters become the most stable when the number of Ag atoms is three. This three-Ag cluster becomes the building block of the $\sqrt{21}{\times}\sqrt{21}$ phase that shows a large surface conductivity. The simulated STM images show that the adatoms look dark in filled-state images while bright in empty-state images. This suggests that the adatoms donate their charge to the substrate. The simulated STM images agree well with the experimental images.

Dosimetry of the Low Fluence Fast Neutron Beams for Boron Neutron Capture Therapy (붕소-중성자 포획치료를 위한 미세 속중성자 선량 특성 연구)

  • Lee, Dong-Han;Ji, Young-Hoon;Lee, Dong-Hoon;Park, Hyun-Joo;Lee, Suk;Lee, Kyung-Hoo;Suh, So-Heigh;Kim, Mi-Sook;Cho, Chul-Koo;Yoo, Seong-Yul;Yu, Hyung-Jun;Gwak, Ho-Shin;Rhee, Chang-Hun
    • Radiation Oncology Journal
    • /
    • v.19 no.1
    • /
    • pp.66-73
    • /
    • 2001
  • Purpose : For the research of Boron Neutron Capture Therapy (BNCT), fast neutrons generated from the MC-50 cyclotron with maximum energy of 34.4 MeV in Korea Cancer Center Hospital were moderated by 70 cm paraffin and then the dose characteristics were investigated. Using these results, we hope to establish the protocol about dose measurement of epi-thermal neutron, to make a basis of dose characteristic of epi-thermal neutron emitted from nuclear reactor, and to find feasibility about accelerator-based BNCT. Method and Materials : For measuring the absorbed dose and dose distribution of fast neutron beams, we used Unidos 10005 (PTW, Germany) electrometer and IC-17 (Far West, USA), IC-18, ElC-1 ion chambers manufactured by A-150 plastic and used IC-l7M ion chamber manufactured by magnesium for gamma dose. There chambers were flushed with tissue equivalent gas and argon gas and then the flow rate was S co per minute. Using Monte Carlo N-Particle (MCNP) code, transport program in mixed field with neutron, photon, electron, two dimensional dose and energy fluence distribution was calculated and there results were compared with measured results. Results : The absorbed dose of fast neutron beams was $6.47\times10^{-3}$ cGy per 1 MU at the 4 cm depth of the water phantom, which is assumed to be effective depth for BNCT. The magnitude of gamma contamination intermingled with fast neutron beams was $65.2{\pm}0.9\%$ at the same depth. In the dose distribution according to the depth of water, the neutron dose decreased linearly and the gamma dose decreased exponentially as the depth was deepened. The factor expressed energy level, $D_{20}/D_{10}$, of the total dose was 0.718. Conclusion : Through the direct measurement using the two ion chambers, which is made different wall materials, and computer calculation of isodose distribution using MCNP simulation method, we have found the dose characteristics of low fluence fast neutron beams. If the power supply and the target material, which generate high voltage and current, will be developed and gamma contamination was reduced by lead or bismuth, we think, it may be possible to accelerator-based BNCT.

  • PDF