Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Al2O3 Surface Passivation by Thermal Oxidation of Aluminum for AlGaN/GaN Structure

Al의 열산화 방법을 이용한 AlGaN/GaN 구조의 표면 Al2O3 패시베이션 효과

  • Kim, Jeong-Jin (Department of Semiconductor and Chemical Engineering, Chonbuk University) ;
  • Ahn, Ho-Kyun (Electronics and Telecommunications Research Institute) ;
  • Bae, Seong-Bum (Electronics and Telecommunications Research Institute) ;
  • Pak, Young-Rak (Electronics and Telecommunications Research Institute) ;
  • Lim, Jong-Won (Electronics and Telecommunications Research Institute) ;
  • Moon, Jae-Kyung (Electronics and Telecommunications Research Institute) ;
  • Ko, Sang-Chun (Electronics and Telecommunications Research Institute) ;
  • Shim, Kyu-Hwan (Department of Semiconductor and Chemical Engineering, Chonbuk University) ;
  • Yang, Jeon-Wook (Department of Semiconductor and Chemical Engineering, Chonbuk University)
  • Received : 2012.10.09
  • Accepted : 2012.10.24
  • Published : 2012.11.01
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Abstract

Surface passivation of AlGaN/GaN heterojunction structure was examined through the thermal oxidation of evaporated Al. The Al-oxide passivation increased channel conductance of two dimensional electron gas (2DEG) on the AlGaN/GaN interface. The sheet resistance of 463 ohm/${\Box}$ for 2DEG channel before $Al_2O_3$ passivation was decreased to 417 ohm/${\Box}$ after passivation. The oxidation of Al induces tensile stress to the AlGaN/GaN structure and the stress seemed to enhance the sheet carrier density of the 2DEG channel. In addition, the $Al_2O_3$ films formed by thermal oxidation of Al suppressed thermal deterioration by the high temperature annealing.

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References

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