References
- E. R. Fossum, IEEE Trans. Electron Dev., 44, 1689 (1997). https://doi.org/10.1109/16.628824
- H. Y. Cheng and Y. C. King, IEEE Electron Devices Lett., 23, 538 (2002). https://doi.org/10.1109/LED.2002.802587
- B. C. Burkey, W. C. Chang, J. Littlenhale, T. H. Lee, T. J. Tredwell, J. P. Lavine, and E. A. Trabka, IEDM Tech. Dig., 28 (1984).
- R. M. Guidash, T. H. Lee, P. P. K. Lee, D. H. Sackett, C. I. Drawley, M. S. Swenson, L. Arbaugh, R. Hollestein, F. Shapiro, and S. Domer, IEDM Tech. Dig., 927 (1997).
- T. Lule , S. Benthien, H. Keller, F. Mutze, P. Rieve, K. Seibel, M. Sommer, and M. Bohm, IEEE Trans. Elec. Dev., 47, 2110 (2000). https://doi.org/10.1109/16.877173
- N. V. Loukianova, H. O. Folkers, J. P. V. Maas, D. W. E. Verbugt, A. J. Mierop, W. Hoekstra, E. Roks, and A. J. Theuwissen, IEEE Trans. Elec. Dev., 50, 77 (2003). https://doi.org/10.1109/TED.2002.807249
- H. Kwon, I. Kang, B. Park, J. Lee, and S. Park, IEEE Trans. Elec. Dev., 51, 178 (2004). https://doi.org/10.1109/TED.2003.821765
- I. Inoue, N. Tanaka, H. Yamashita, T. Yamaguchi, H. Ishiwata, and H. Ihara, IEEE Trans. Elec. Dev., 50, 43 (2003). https://doi.org/10.1109/TED.2002.807525
- M. Mori, M. Katsuno, S. Kasuga, T. Murata, and T. Yamaguchi, IEEE J. Solid-State Circuits, 39, 2426 (2004). https://doi.org/10.1109/JSSC.2004.837028