• Journal of Magnetics
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• v.15 no.1
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• pp.7-11
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• 2010

Spin-orbit coupling (SOC) is a source of strong spin dephasing in two- and three-dimensional semiconducting systems. We report that spin dephasing in a two-dimensional electron gas can be suppressed by introducing a quantum point contact. Surprisingly, this suppression was not limited to the vicinity of the contact but extended to the entire two-dimensional electron gas. This facilitates the electrical control of the spin degree of freedom in a two-dimensional electron gas through spin-orbit coupling.

• Journal of Korean Vacuum Science & Technology
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• v.1 no.1
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• pp.19-23
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• 1997

The conductance of a microscopic constriction in a two-dimensional electron gas is obtained as a function of both the constriction width and curvature. When the quantized conductance G at plateaus is given by the channel number Nc times the quantum unit 2e2/h, Nc is found to be a function of not only the width and but also the curvature. At a given W, Nc increases by one whenever the constriction curvature decreases by about a certain value. Until the shape smoothness becomes comparable to the two parallel boundaries, there exist more channels avaliable for conduction in a smaller-curvature constriction than in a larger-curvature one. This result is very interesting because Nc has been considered to depend on the width W only. this reflects that the number of the quantized transverse levels depend o both the constriction width and curvature in a two-dimensional electron gas.

• Applied Science and Convergence Technology
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• v.23 no.3
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.3
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• pp.59-65
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• 1992

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

• Journal of Magnetics
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• v.10 no.2
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• pp.66-70
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• 2005

The junction properties between the ferromagnet (FM) and two-dimensional electron gas (2DEG) system are crucial to develop spin electronic devices. Two types of 2DEG layer, InAs and GaAs channel heterostructures, are fabricated to compare the junction properties of the two systems. InAs-based 2DEG layer with low trans-mission barrier contacts FM and shows ohmic behavior. GaAs-based 2DEG layer with $Al_2O_3$ tunneling layer is also prepared. During heat treatment at the furnace, arsenic gas was evaporated and top AlAs layer was converted to aluminum oxide layer. This new method of forming spin injection barrier on 2DEG system is very efficient to obtain tunneling behavior. In the potentiometric measurement, spin-orbit coupling of 2DEG layer is observed in the interface between FM and InAs channel 2DEG layers, which proves the efficient junction property of spin injection barrier.

• Electrical & Electronic Materials
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• v.25 no.12
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• pp.13-20
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• 2012

• Journal of the Korean Chemical Society
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• v.40 no.6
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• pp.401-408
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• 1996

In general, the high temperature superconductors have two-dimensional anisotropic structures. It is important to investigate the dependence of the critical temperature on the dimensions of the electron's motion. The equation of state for electron gas is deduced which describes the electron's motion in superconductors using the kinetic theory of gas. And the critical temperatures of three, two, and one dimensional gases were calculated. According to these equations, restricting the dimension of the electron's motion induces the increase of the critical temperatures. This implies the possibility that the multi-critical temperature of some superconductors is caused by the change of the dimension related to the pathways of the electron.

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1373-1379
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• 1988

This paper describes a two-dimensional analysis of the potential distribution and electron concentration of the MODFET at channel using FDM. More exact analysis can be obtained by two-dimensional analysis which considers parasitic effects ignored in one-dimensional analysis. Using Poisson and Shrodinger equations, the potential distribution and the wave function are calculated within a constant error bound. As a result, the relations between the thickness of spacer, doping concentration of (n) AlGaAs layer, and the sheet density of the 2DEG (2 Dimensional Electron Gas) of MODFET at channel are suggested quantitively. The sheet density of the 2DEG is increased as the thickness of the spacer is decreased of the doping concentration of the (n)AlGaAs layer is lowered.

• Proceedings of the KAIS Fall Conference
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• 2004.06a
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• pp.158-161
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• 2004

In this study, an analytical model for I-V characteristics of an n-AIGaAs / GaAs Delta doped HEMT is proposed. The two-dimensional electron gas density and the conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. The parameters, which include the saturation velocity, two-dimensional electron gas concentration, thickness of the doped and undoped layer(AIGaAs, GaAs, spacer etc.,), are in good agreement with the independent calculations.

• Journal of the Korean Physical Society
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• v.73 no.11
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• pp.1612-1618
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• 2018

In this work, the ground-state properties of an interacting electron gas confined in a two-dimensional quantum dot system with the Gaussian potential ${\upsilon}(r)=V_0(1-{\exp}(-r^2/p))$, where $V_0$ and p are confinement parameters, are determined numerically by using the Thomas-Fermi approximation. The shape of the potential is modified by changing the $V_0$ and the p values, and the influence of the confining potential on the system's properties, such as the chemical energy, the density profile, the kinetic energy, the confining energy, etc., is analyzed for both the non-interacting and the interacting cases. The results are compared with those calculated for a harmonic potential, and excellent agreement is obtained in the limit of high p values for both the non-interacting and the interacting cases.