Proceedings of the KAIS Fall Conference (한국산학기술학회:학술대회논문집)

The Korea Academia-Industrial cooperation Society (한국산학기술학회)
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A Study on the I-V characteristics of a delta doped short-channel HEMT

단채널 델타도핑 HEMT의 전압-전류 특성에 대한 2차원적 해석

  • Lee Jung-Ho (Department of Electronics Hong-Ik University) ;
  • Chae Gyoo-Soo (Division of Information & Communication Cheonan University) ;
  • Kim Min-Nyun (Division of Information & Communication Cheonan University)
  • 이정호 (홍익대학교 전자공학과) ;
  • 채규수 (천안대학교 정보통신학부) ;
  • 김민년 (천안대학교 정보통신학부)
  • Published : 2004.06.01
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Abstract

In this study, an analytical model for I-V characteristics of an n-AIGaAs / GaAs Delta doped HEMT is proposed. The two-dimensional electron gas density and the conduction band edge profile are calculated from a self-consistent iterative solution of the Poisson equation. The parameters, which include the saturation velocity, two-dimensional electron gas concentration, thickness of the doped and undoped layer(AIGaAs, GaAs, spacer etc.,), are in good agreement with the independent calculations.

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