• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2013년도 추계학술대회 논문집
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• pp.206-213
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• 2013

본 논문에서는 적분변환법을 이용하여 면외전단 충격하중이 작용하는 두 개의 서로 다른 압전재료층 사이의 기능경사압전재료 접합층 내부 균열에 대한 과도응답 해석 을 수행한다. 기능경사압전재료의 물성치는 두께 방향을 따라 연속적으로 변하는 것으로 가정한다. 라플라스 변환과 푸리에 변환을 이용하여 문제를 복합적분방정식으로 구성하고, 수치해석을 위해 복합적 분방정식을 제 2 종 프레드홀름 적분방정식으로 표현한다. 전기적 하중, 재료물성 치의 변화율, 각 접합층의 두께가 균열의 과도응답에 미치는 영향을 보기 위해 동에너지 해방률에 대한 수치해석 결과를 제시한다.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2006년도 추계 학술대회논문집
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• pp.167-176
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• 2006

In this paper we show that solutions of the nonlinear Nernst-Planck equation possesses the quadruple-layer structure near the interface when the electrolyte receives a high frequency forcing such as a high-frequency alternating current. Very near to the interface wall, the well-known, classical Stern layer exists. Near to the Stern layer we have the secondly thin layer (to be called inner layer in this paper) where the ion concentrations behave under the same frequency as the external forcing. However, in this layer, the positive and negative ion concentrations develop with the time phase 180-degree different from each other. Next to this second layer, we have the third layer (called middle layer) in which two ion concentrations change with the time period double the forcing, and both concentrations behave in the same time phase. In the outermost layer, i.e. the forth layer, (called outer layer) the ion concentrations show the same-phase development as the third one but decaying very slowly in time. Our assertion is mostly based on the 1-D numerical simulation for the Nernst-Planck equation under a high frequency AC field assuming that the quadruple layer is very thin compared with the length scale representative of the bulk region.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.25-28
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• 2002

We have been fabricated white organic light emitting diode with two-wavelength ard mixing blue emit in DPVBi (4, 4-bis(2, 2-diphenylvinyl)-1, 1 -biphenyl)layer and yellow emit in rubrene (5, 6, 11, 12-tetraphenylnaphthacene)as emitting layer which are controlled with thickness. This device emits white light emitting in CIE (0.29, 0.33), 1000cd/$m^2$ at DC 18V.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 1995년도 추계 학술대회논문집
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• pp.126-131
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• 1995

In this paper we study steady capillary-gravity waves in a two-layer fluid bounded above by a free surface and below by a horizontal rigid boundary with a small obstruction, Two critical speeds for the waves are obtained. Near the smaller critical speed, the derivation of the usual forced KdV equation (FKdV) fails when the coefficient of the nonlinear term in the FKdV vanishes. To overcome this difficulty, a new equation called a forced extended KdV equation (FEKdV) governing interfacial wave forms is obtained by a refined asymptotic method. Various solutions and numerical results of this equation are presented.

• 한국해안해양공학회지
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• 제9권1호
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• pp.9-23
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• 1997

일차원 2층 성충류에 대한 음해 유한차분법을 이용한 수치실험 연구를 실시하였다 수치방법에 대한 기본 테스트와 함께 수질실험 자료가 있는 교환류에 대한 모델결과의 검증을 실시하였다. 다양한 충간 및 해저마찰계수와 수치계산의 시간 가중인자, smoothing 인자에 대한 모델 반응 결과를 제시한다. 아울러 2층 모델을, 성충이 되어 있고 해저면 기울기가 급격한 조건에서 내부파의 발생과 전파 특성에 대한 연구에 응용하였다. 하류부 경계의 1개 층 혹은 2개 층을 방사조건으로 처리했을 때, 하류부를 통해 내부파가 잘 전파되어, 방사파 조건의 성충류 모델링에의 적용성을 확인하였다. 또한 하류부의 저층두께가 두꺼울수록 내부파가 하류부 경계를 통해 활발히 전파해 가는 것으로 나타났다. 이는 충간의 내부파 위치에너지는 상충의 두께가 일정한 경우, 하층의 두께에 좌우될 것임을 암시한다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.45-48
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• 2003

BiSrCaCuO thin films were fabricated by atomic layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to $SrBi_2O_4$ by in-situ anneal.

• 오토저널
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• 제10권2호
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• pp.61-69
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• 1988

The finite-difference three-dimensional boundary layer procedure of Chang and Patel is modified and applied to solve the boundary layer development on the automobile surface. The inviscid pressure distribution needed to solve the boundary layer equations is obtained by using a low order panel method. The plane of symmetry boundary layer exhibits the strong streamline divergence up to the midbody and convergence thereafter. The streamline divergence in front of the windshield helps the boundary layer to overcome the sever adverse pressure gradient and avoid the separation. The relaxation of the pressure right after the top of the wind-shield, on the other hand, makes the overly thinned boundary layer to readjust and prompts the streamlines to converge into the symmetry plane before the external streamlines do. The three-dimensional characteristics are less apparent after the midbody and the boundary layer is similar to that of the two-dimensional flow. The results of the off-plane-of-symmetry boundary layer are also presented.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2002년도 하계종합학술대회 논문집(2)
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• pp.225-228
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• 2002

The adhesion effect between the oxide layer and the metal layer has been studied by RTP anneal. Two types of oxides, BPSG and P-TEOS, were used as a bottom layer under multi-layered metal film. We observe the interface between oxide and metal layer using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Adhesion failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal film at 650"C RTP anneal. The phosphorus rich layer was observed at interface between BPSG oxide and metal layer by AES and TEM measurements. On the other hand adhesion was a)ways good in the sample used P-TEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal film was improved when the sample was annealed below $650^{\circ}C$.TEX>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.281-283
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• 2001

$Bi_{2}Sr_{2}CuO_{x}$(Bi-2201) thin films were fabricated by atomic layer-by-layer deposition using an ion bearn sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used with ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition. two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit. then three dimensional growth takes place. Since Cu element is the most difficult to oxidize. only Sr and Bi react with each other predominantly. and forms a buffer layer on the substrate in an amorphous-like structure. which is changed to $SrBi_{2}O_{4}$ by in-situ anneal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.281-283
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• 2001

Bi$_2$Sr$_2$CuO$\_$x/(Bi-2201) thin films were fabricated layer-by-layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed with oxygen were used ultraviolet light irradiation to assist oxidation. At early stages of the atomic layer by layer deposition, two dimensional epitaxial growth which covers the substrate surface would be suppressed by the stress and strain caused by the lattice misfit, then three dimensional growth takes place. Since Cu element is the most difficult to oxidize, only Sr and Bi react with each other predominantly, and forms a buffer layer on the substrate in an amorphous-like structure, which is changed to SrBi$_2$O$_4$ by in-situ anneal.