• The KIPS Transactions:PartC
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• v.8C no.6
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• pp.721-730
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• 2001

Nowadays corporation networks are growing rapidly and they are needed to communicate with branch offices. Therefore, a VPN (Virtual Private Network) appears to reduce the cost of access and facilitate to manage and operate the enterprise network. Along with this trend, many studies have been done on VPN. It is important that the performance issues should be considered when VPN protocols are applied. However, most of them are limited on the tunneling methods and implementation of VPN and a few studies are performed on how installation of VPN affects the network. Therefore, in this paper, a testbed is constructed and VPN protocols are installed on it. Real traffic is generated and transmitted on the testbed to test how installing a VPN affects the network. As a result, layer 3 VPN protocol shows lower network performance than layer 2 VPN protocols. And we realize that the combination of L2TP and IPSec is the better method to install VPN than using IPSec only in the aspects of performance and security.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.1268-1270
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• 1993

In this study, the characteristics of Si-$SiO_2$ interface and its degradation in short channel SONOSFET nonvolatile memory devices, fabricated by 1Mbit CMOS process($1.2{\mu}m$ design rule), with $65{\AA}$ blocking oxide layer, $205{\AA}$ nitride layer, and $30{\AA}$ tunneling oxide layer on the silicon wafer were investigated using the charge pumping method. For investigating the Si-$SiO_2$ interface characteristics before and after write/erase cycling, charge pumping current characteristics with frequencies, write/erase cycles, as a parameters, were measured. As a result, average Si-$SiO_2$ interface trap density and mean value of capture cross section were determined to be $1.203{\times}10^{11}cm^{-2}eV^{-1}\;and\;2.091{\times}10^{16}cm^2$ before write/erase cycling, respectively. After cycling, when the write/erase cycles are $10^4$, average $Si-SiO_2$ interface trap density was $1.901{\times}10^{11}cm^{-2}eV^{-1}$. Incresing write/erase cycles beyond about $10^4$, Si-$SiO_2$ interface characteristics with write/erase cycles was increased logarithmically.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.382-382
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• 2010

$TaO_2$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility in achieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFETchannel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. The atomic structure of amorphous and crystalline Tantalum oxide ($TaO_2$) gate dielectrics thin film on Si (100) were grown by utilizing atomic layer deposition method was examined using Ta-K edge x-ray absorption spectroscopy. By using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy (REELS) the electronic and optical properties was obtained. In this study, the band gap (3.400.1 eV) and the optical properties of $TaO_2$ thin films were obtained from the experimental inelastic scattering cross section of reflection electron energy loss spectroscopy (REELS) spectra. EXAFS spectra show that the ordered bonding of Ta-Ta for c-$TaO_2$ which is not for c-$TaO_2$ thin film. The optical properties' e.g., index refractive (n), extinction coefficient (k) and dielectric function ($\varepsilon$) were obtained from REELS spectra by using QUEELS-$\varepsilon$(k, $\omega$)-REELS software shows good agreement with other results. The energy-dependent behaviors of reflection, absorption or transparency in $TaO_2$ thin films also have been determined from the optical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.381-381
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• 2010

$(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films as gate dielectrics have been proposed to overcome the problems of tunneling current and degradation mobility inachieving a thin equivalent oxide thickness. An extremely thin $SiO_2$ layer is used in order to separate the carrier in MOSFET channel from the dielectric field fluctuation caused by phonons in the dielectric which decreases the carrier mobility. The electronic and optical properties influenced the device performance to a great extent. $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric films on p-Si (100) were grown by atomic layer deposition method, for which the conduction band offsets, valence band offsets and band gapswere obtained by using X-ray photoelectron spectroscopy and reflection electron energy loss spectroscopy. The band gap, valence and conduction band offset values for $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ dielectric thin film, grown on Si substrate were about 5.34, 2.35 and 1.87 eV respectively. This band alignment was similar to that of $ZrO_2$. In addition, The dielectric function (k, $\omega$), index of refraction n and the extinction coefficient k for the $(ZrO_2)_{0.66}(HfO_2)_{0.34}$ thin films were obtained from a quantitative analysis of REELS data by comparison to detailed dielectric response model calculations using the QUEELS-$\varepsilon$(k, $\omega$)-REELS software package. These optical properties are similar with $ZrO_2$ dielectric thin films.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.114-114
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• 2010

최근 고용량의 디커플링 캐패시터를 기판에 내장하여 고주파 발생의 원인인 배선길이와 실장 면적을 획기적으로 줄이는 임베디드 디커플링 캐패시터에 대한 연구가 활발히 진행되고 있다. 하지만 기존의 공정들은 높은 공정온도와 같은 공정상의 한계를 가지고 있어 상온 저 진공 분위기에서 세라믹 분말을 기판에 고속 분사시켜 기공과 균열이 거의 없는 치밀한 나노구조의 세라믹 제작이 가능한 후막코팅기술인 Aerosol Deposition Method (ADM)에 착목하였으며, 이 ADM을 박막공정으로 응용하여 $BaTiO_3$ 박막을 제작하고 고용량의 디커플링 캐패시터 제작을 실현하고자 한다. 하지만, Cu 기판 상에 성막 된 $0.5\;{\mu}m$이하의 $BaTiO_3$ 박막에서는 $BaTiO_3$ 분말 내에 존재하는 평균입자 보다 큰 입자와 응집분말로 인해 발생하는 pore, crater, not-fully-crushed particles와 같은 거시적인 결함들에서의 전류 통전과 울퉁불퉁한 $BaTiO_3$ 박막과 기판 사이의 계면에서의 전계의 집중에 의한 전류의 증가로 인하여 큰 누설전류 발생하는 문제에 봉착하였다. 이러한 문제를 해결하기 위하여 제시된 효과적인 방법으로 Stainless steel 기판과 같이 표면경도가 높은 기판을 사용하는 것이며, 이를 통해 $0.2\;{\mu}m$의 두께까지 유전 $BaTiO_3$ 박막을 성막 할 수 있었으며, 치밀한 표면 미세구조와 줄어든 $BaTiO_3$ 박막과 기판 사이의 계면의 거칠기를 확인하였다. 하지만, $BaTiO_3$ 박막 내에 발생하는 누설전류의 근본원인을 확인하기 위해서는 누설전류에 대한 미시적인 접근이 더욱 요구된다. 이에 본 연구에서는 누설전류 발생원인의 미시적 접근을 위해 두께에 따른 $BaTiO_3$ 박막의 누설전류 전도기구에 대한 조사하였으며, 이를 통해 $BaTiO_3$ 박막내 발생하는 누설전류의 원인은 $BaTiO_3$막 내에서 donor로서 역할을 하는 oxygen vacancy와 불균일한 전계의 집중으로 인한 전자의 tunneling 현상임을 확인할 수 있었다. 또한, Nano-indenter와 Conductive atomic force microscopic를 이용한 정밀 측정을 통해 표면경도의 중요성을 재확인하였으며 $BaTiO_3$ 박막의 두께가 $0.2\;{\mu}m$이하로 더욱 얇아지게 되면 입자간 결합 문제 또한 ADM을 박막화 하는데 있어 중요한 요소임을 확인하였다.

• Journal of Korean Tunnelling and Underground Space Association
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• v.14 no.2
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• pp.141-157
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• 2012

For the application TBM tunneling method, Both tunnel design standard and case study designed & constructed in domestic and foreign have been conducted. According to the study, the number of lane and inner shape (single or duplex) vary depending on the volume of traffic. Also extra space located in the top and bottom of tunnel is used for a multipurpose such as ventilation, disaster prevention, maintenance and administration. To find area ratio according to the components of road TBM tunnel, a standard section was considered as a two-lane road. Then, the analysis of area ratio of this section which consists of components for clearance, extra space in upper and lower tunnel was carried on two widths of shoulder. In addition, after a structural analysis, a thickness requirement of lower slab which is essential for road tunnel was derived on a few supporting types. Through correlation analysis, the ranges of available cross-sectional area between slab thickness and lower extra space of the tunnel was presented.

• Journal of Electrochemical Science and Technology
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• v.12 no.3
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• pp.323-329
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• 2021

This work presents a contrasting behavior of formic acid oxidation (FAO) on the Pt and Bi deposits on different Pt substrates. Using irreversible adsorption method, Bi and Pt were sequentially deposited on Pt electrodes of nanoparticle (Pt NP) and disk (Pt disk). The deposited layers of Bi and Pt on the Pt substrates were characterized with X-ray photoelectron spectroscopy, transmission microscopy and scanning tunneling microscopy. The electrochemical behaviors and FAO enhancements of Pt NP and Pt disk with deposited Bi only (i.e., Bi/Pt NP and Bi/Pt disk), were similar to each other. However, additional deposition of Pt on Bi/Pt NP and Bi/Pt disk (i.e., Pt/Bi/Pt NP and Pt/Bi/Pt disk) changed the electrochemical behavior and FAO activity in different ways depending on the shapes of the Pt substrates. With Pt/Bi/Pt NP, the hydrogen adsorption was suppressed and the surface oxidation of Pt was enhanced; while with Pt/Bi/Pt disk, the opposite behavior was observed. This difference was interpreted as a stronger interaction between the deposited Bi and Pt on Pt NP than that on Pt disk. The FAO performance on Pt/Bi/Pt NP is much better than that on Pt/Bi/Pt disk, most likely due to the difference in the interaction between the deposited Pt and Bi depending on the shapes of Pt substrates. In designing FAO electrochemical catalysts using Pt and Bi, the shape of a Pt substrate was concluded to be critically considered.

• Geomechanics and Engineering
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• v.29 no.3
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• pp.291-300
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• 2022

Tunnel boring machines combined with the earth pressure balanced shield method (EPB shield TBMs) have been adopted in urban areas as they allow excavation of tunnels with limited ground deformation through continuous and repetitive excavation and support. Nevertheless, the expansion of TBM construction requires much more minor and exquisitely controlled surface settlement to prevent economic loss. Several parametric studies controlling the tunnel's geometry, ground properties, and TBM operational factors assuming ordinary conditions for EPB shield TBM excavation have been conducted, but the impact of excessive excavation on the induced settlement has not been adequately studied. This study conducted a numerical evaluation of surface settlement induced by the ground loss from face imbalance, excessive excavation, and tail void grouting. The numerical model was constructed using FLAC3D and validated by comparing its result with the field data from literature. Then, parametric studies were conducted by controlling the ground stiffness, face pressure, tail void grouting pressure, and additional volume of muck discharge. As a result, the contribution of these operational factors to the surface settlement appeared differently depending on the ground stiffness. Except for the ground stiffness as the dominant factor, the order of variation of surface settlement was investigated, and the volume of additional muck discharge was found to be the largest, followed by the face pressure and tail void grouting pressure. The results from this study are expected to contribute to the development of settlement prediction models and understanding the surface settlement behavior induced by TBM excavation.

• Journal of the Korean Society of Safety
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• v.37 no.6
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• pp.102-107
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• 2022

South Korea will soon be a super-aged society, as more than 20.6% of its population will be 65 years and older by 2025. As of 2022, 17.5% of the total population in South Korea is 65 years and older, which exceeds the set threshold for an aged society, where more than 14% of the population is 65 years and older. The proportion of older subway construction workers has increased. Aging workers and their work stress negatively impact their workability. A previous study demonstrated that the stress index measured using the uBioMacpa measurement device (Macpa stress index) had a significant correlation with work stress in South Korea. The device tests vascular health and measures stress levels via Macpa signal analysis. In this study, the pulse waves of subway construction workers were measured using uBioMacpa to identify their stress levels. The stress levels were analyzed by age, years of service, job position, employment type, and work type. Herein, these statistics could not be easily represented by a normal distribution; therefore, the Kruskal-Wallis test, a nonparametric statistical method, was used for the analysis of data. The results showed that age, job position, employment type, and working type affected the Macpa stress index and the stress levels of workers increased with age. In terms of job position, technical engineers were more stressed than other workers because of their poor working environment. In terms of employment type, daily-wage workers were more stressed than other workers. In terms of working type, tunneling, waterproofing, and construction scored the highest Macpa stress indexes without any significant difference, whereas earthworks scored the lowest. Based on the analysis of Macpa stress index, safety and health management plans were proposed to reduce the stress levels of workers. Moreover, a manual for efficient stress management must be developed for subway construction workers.

• Journal of Korean Tunnelling and Underground Space Association
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• v.11 no.4
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• pp.403-410
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• 2009

This paper discusses an application method of critical strains concept for tunnels' safety by using the values of measured displacements which are obtained in the field. The aim of this paper is to: (1) study on the engineering meanings of critical strains concept by reviewing the previous researches and application examples with measured displacement values; (2) study on the engineering reasonability of critical strains concept with the view point of a tunnel engineering and a geotechnical engineering; (3) study on the features of ground deformation due to tunneling and reciprocal relation between total displacement and measured displacement; (4) evaluate a tunnel safety by using domestic measurements collected in the field; and (5) re-evaluate the control criteria which were previously used in the field, with the view point of critical strains concept. Consequently, it was confirmed that critical strains in the ground has a reasonability and a possibility of unified or common concept with the view point of a tunnel engineering.