• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.200-209
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• 2008

This paper describes bandwidth linearization techniques in phase-locked loop (PLL) design for common-clock serial link applications. Utilizing a continuously tunable single-input dual-path LC VCO and a constant-gain phase detector, a proposed architecture is well suited to implementing PLLs that must be compliant with standards that specify minimum and maximum allowable bandwidths such as PCI Express Gen2 or FB-DIMM applications. A prototype 4.75 to 6.1-GHz PLL is implemented in 90-nm CMOS. Measurement results show that the PLL bandwidth and random jitter (RJ) variations are well regulated and that the use of a differentially controlled dual-path VCO is important for deterministic jitter (DJ) performance.

• Journal of the Korea Computer Industry Society
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• v.2 no.10
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• pp.1253-1260
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• 2001

In this paper, a new voltage-controlled tunable analog active element for low-voltage applications and information protection is proposed. The proposed active element is composed of the CMOS complementary cascode circuit which can extend transconductance of an element. Therefore, the unity gain frequency which is determined transconductance is increased than that of the conventional element. And then these results are verified by the $0.25\mutextrm{m}$ CMOS n-well parameter HSPICE simulation. As a result, the gain and the unity gain frequency are 42㏈ and 200MHz respectively in the element on 2V supply voltage. And power dissipation of the designed circuit is 0.32mW.

• Journal of the Optical Society of Korea
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• v.4 no.1
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• pp.14-18
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• 2000

We have investigated gain flattening of EDFA systems with or without a gain equalizer for WDM long-haul transmission using a re-circulating EDFA loop. Without a gain equalizer, gain variation as small as 2.9 dB was achieved over the 10-nm band of a 100 cascaded EDFA system by the inversion principle. With a gain equalizer based on all-fiber acousto-optic tunable filters, two different config-urations of EDFAs were tested. For a single-stage EDFA scheme, the 21-nm band has shown 3.8 dB of gain variation at 17.4 ∼ 20.3 dB of OSNRs after the 100the stage of EDFAs. For a dual-stage EDFA scheme, a wider bandwidth of 34 nm has shown 3.6-dB variation after 40 cascaded EDFAs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.719-722
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• 2003

Ferroelectric $Pb(Zr_{1-x}Ti_x)O_3$ (PZT) films were deposited on (001) MgO single crystals using sol-gel method. Structural properties and surface morphologies of PZT films were investigated using an X-ray diffractometer and a scanning electron microscopy, respectively. The dielectric properties of PZT films were investigated with the dc bias field using interdigitated capacitors (IDC) which were fabricated on PZT films using a thick metal layer by photolithography and dry etching process. The small signal dielectric properties of PZT films were calculated by a modified conformal mapping method with low and high frequency data, such as capacitance measured by an impedance gain/phase analyzer at 100 kHz and reflection coefficient (S-parameter) measured by a HP 8510C vector network analyzer at 1 -20 GHz. The IDC on PZT films exhibited about 67% of capacitance change with an electric field of 135 kV/cm at 10 GHz. These PZT thin films can be applied to tunable microwave devices such as phase shifters, tunable resonators and tunable filters.

• Korean Journal of Optics and Photonics
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• v.8 no.1
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• pp.58-62
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• 1997

A new, simple lasing loop configuration employing a fiber grating was proposed and demonstrated for all-optical gain control of erbium-doped fiber amplifier. The lasing loop was designed such that the fiber grating acts as a notch filter to cutoff the lasing light as well as selects the lasing wavelength. The operating gain was clamped to the same level as the loop loss and it could be varied with a tunable directional coupler in the loop. It is believed that this type of gain-controlled erbiumdoped fiber amplifier can have several advantages when used in wavelength-division-multiplexed transmission systems.

• ETRI Journal
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• v.36 no.3
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• pp.510-513
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• 2014

A Q-band pHEMT image-rejection low-noise amplifier (IR-LNA) is presented using inter-stage tunable resonators. The inter-stage L-C resonators can maximize an image rejection by functioning as inter-stage matching circuits at an operating frequency ($F_{OP}$) and short circuits at an image frequency ($F_{IM}$). In addition, it also brings more wideband image rejection than conventional notch filters. Moreover, tunable varactors in L-C resonators not only compensate for the mismatch of an image frequency induced by the process variation or model error but can also change the image frequency according to a required RF frequency. The implemented pHEMT IR-LNA shows 54.3 dB maximum image rejection ratio (IRR). By changing the varactor bias, the image frequency shifts from 27 GHz to 37 GHz with over 40 dB IRR, a 19.1 dB to 17.6 dB peak gain, and 3.2 dB to 4.3 dB noise figure. To the best of the authors' knowledge, it shows the highest IRR and $F_{IM}/F_{OP}$ of the reported millimeter/quasi-millimeter wave IR-LNAs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.5
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• pp.675-681
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• 2016

A 41dB gain control range $6^{th}$-order band-pass receiver front-end (RFE) using CMOS switched frequency translated impedance (FTI) is presented in a 40 nm CMOS technology. The RFE consists of a frequency tunable RF band-pass filter (BPF), IQ gm cells, and IQ TIAs. The RF BPF has wide gain control range preserving constant filter Q and pass band flatness due to proposed pre-distortion scheme. Also, the RF filter using CMOS switches in FTI blocks shows low clock leakage to signal nodes, and results in low common mode noise and stable operation. The baseband IQ signals are generated by combining baseband Gm cells which receives 8-phase signal outputs down-converted at last stage of FTIs in the RF BPF. The measured results of the RFE show 36.4 dB gain and 6.3 dB NF at maximum gain mode. The pass-band IIP3 and out-band IIP3@20 MHz offset are -10 dBm and +12.6 dBm at maximum gain mode, and +14 dBm and +20.5 dBm at minimum gain mode, respectively. With a 1.2 V power supply, the current consumption of the overall RFE is 40 mA at 500 MHz carrier frequency.

• Journal of the Optical Society of Korea
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• v.8 no.1
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• pp.13-16
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• 2004

A widely tunable SG-DFB (Sampled Grating Distributed Feedback) laser diode is proposed and its feasibility is confirmed through simulation. The new SG-DFB laser diode is composed of a pair of sampled gratings, some parts of which are gain sections and the other parts of which are phase control sections. It is shown that a few tens of nanometers can be tuned through the adjustment of two currents into the phase control sections. Higher output power is expected compared with a SG-DBR laser diode with similar parameters. The dynamic single mode operation is also observed in the time-domain simulation.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3190-3192
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• 1999

A Novel wide-band wide-tunable current-mode (CM) gamma corrector for HDTV camera applications is proposed. The gamma corrector provides accurate gamma control in a wide range by simple electrical adjustment of weighting amplifiers' gain. It has wide signal bandwidth more than 40MHz sufficient for HDTV video signal processing and is implementable with simple integrated circuit with low power dissipation of 125mW.

• Proceedings of the IEEK Conference
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• summer
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• pp.218-220
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• 2004

A new wide-band VCO topology using Miller capacitance is proposed. Contrary to conventional VCO using the Miller capacitance where the variable amplifier gain is negative, the proposed VCO uses both the negative and positive variable amplifier gain to enhance the frequency tuning range significantly. The proposed VCO is simulated using HSPICE. The simulations show that 410MHz and 220MHz frequency tuning range are obtained using the negative .and positive variable amplifier gain, respectively. The tuning range of the proposed VCO is $23\%$ of the center frequency(2.8GHz). The phase noise is -104dBc/Hz at 1MHz offset by simple model. The operating current is only 3.84mA at 2.5V power supply.