• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.345-346
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• 2013

InGaN material is being studied increasingly as a prospective material for solar cells. One of the merits for solar cell applications is that the band gap energy can be engineered from 0.7 eV for InN to 3.4 eV for GaN by varying of indium composition, which covers almost of solar spectrum from UV to IR. It is essential for better cell efficiency to improve not only the crystalline quality of the epitaxial layers but also fabrication of the solar cells. Fabrication includes transparent top electrodes and surface texturing which will improve the carrier extraction. Surface texturing is one of the most employed methods to enhance the extraction efficiency in LED fabrication and can be formed on a p-GaN surface, on an N-face of GaN, and even on an indium tin oxide (ITO) layer. Surface texturing method has also been adopted in InGaN-based solar cells and proved to enhance the efficiency. Since the texturing by direct etching of p-GaN, however, was known to induce the damage and result in degraded electrical properties, texturing has been studied widely on ITO layers. However, it is important to optimize the ITO thickness in Solar Cells applications since the reflectance is fluctuated by ITO thickness variation resulting in reduced light extraction at target wavelength. ITO texturing made by wet etching or dry etching was also revealed to increased series resistance in ITO film. In this work, we report a new way of texturing by deposition of thickness-optimized ITO films on ITO nano dots, which can further reduce the reflectance as well as electrical degradation originated from the ITO etching process.

• 유기물자원화
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• 제32권1호
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• pp.39-47
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• 2024

본 연구에서는 반도체 제조공정에서 발생한 실리콘 슬러지(SS)를 재활용하여 라이다 센서에 인식 가능한 검은색 소재(SS/bTiO₂)로 제조하고, 두 종류의 라이다 센서(MEMS 및 Rotating LiDAR)를 활용하여 제조한 소재의 인식률을 확인하였다. 상세히는, SS 표면의 금속 불순물을 제거하여 이산화티타늄을 도입하고 화학적 환원을 통해 SS/bTiO₂ 소재를 제조하였다. SS/bTiO₂는 투명 페인트와 혼합하여 친수성 검은색 도료로 제조하고 스프레이 건을 사용하여 유리 기판에 도포하였다. SS/bTiO₂ 기반의 도료는 상용화된 카본 블랙 기반의 도료와 유사한 명도(L^*=15.7)를 가짐과 동시에 우수한 근적외선 반사율(26.5R%, 905nm)을 나타내었다. 더불어, MEMS 및 Rotating 라이다를 통해서도 성공적으로 인식이 되는 것을 확인하였다. 이는 프레넬 반사 원리에 의해 검은색 이산화티타늄과 실리콘 슬러지 간의 계면에서 높은 반사가 일어났기 때문이다. 본 연구를 통해, 반도체 제조공정에서 발생하는 실리콘 슬러지를 효과적으로 재활용할 수 있는 새로운 응용 방안에 대하여 제시하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.423-423
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• 2011

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation (REDOX) reaction will occur on the ZnO surface and generate O2- and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into CO2 and H2O. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with TiO2. Zn(OH)2 was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• 반도체디스플레이기술학회지
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• 제7권4호
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• pp.7-11
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• 2008

ITO (Indium Tin Oxide) thin films have been extensively studied for OLED devices because they have high transparent properties in the visible wavelength and a low electrical resistivity. These ITO films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$ and Ar+$H_2$) at $300^{\circ}C$. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon has been changed from 0.5sccm to 5sccm and from 0.01sccm to 0.25sccm respectively. The resistivity of ITO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while it is nearly constant under Ar+$H_2$. And the peak of ITO films obtained (222) and (400) orientations and the average transmittance was over 80% in the visible range. The OLED device fabricated with different ITO substrates made by configuration of ITO/$\alpha$-NPD/Alq3/LiF/Al to elucidate the performance of ITO substrate for OLED device.

• 한국전기전자재료학회논문지
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• 제26권8호
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• pp.602-607
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• 2013

Concern for the TOS (Transparent Oxide Semiconductor) is increasing with the recent increase in interest for flexible device. Especially MgZnO has attracted a lot of attention. $Mg_xZn_{1-x}O$, which ZnO-based wideband-gap alloys is tuneable the band-gap ranges from 3.36 eV to 7.8 eV. In particular, the flexible substrate, the crystal structure of the amorphous as well as the surface morphology is not good. So research of MgZnO thin films growth on flexible substrate is essential. Therefore, in this study, we studied on the effects of the oxygen partial pressure on the structural and crystalline of $Mg_{0.1}Zn_{0.9}O$ thin films. MgZnO thin films were deposited on PES substrate by using pulsed laser deposition. We used XRD and AFM in order to observe the structural characteristics of MgZnO thin films. UV-visible spectrophotometer was used to get the band gap and transmittance. Crystallization was done at a low oxygen partial pressure. The crystallinity of MgZnO thin films with increasing temperature was improved, Grain size and RMS of the films were increased. MgZnO thin films showed high transmittance over 80% in the visible region.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.54-54
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• 2010

Zinc oxide is metal oxide semiconductor with the 3.37 eV bandgap energy. Zinc oxide is very attractive materials for many application fields. Zinc Oxide has many advantages such as high conductivity and good transmittance in visible region. Also it is cheaper than other semiconductor materials such as indium tin oxide (ITO). Therefore, ZnO is alternative material for ITO. ZnO is attracting attention for its application to transparent conductive oxide (TCO) films, surface acoustic wave (SAW), films bulk acoustic resonator (FBAR), piezoelectric materials, gas-sensing, solar cells and photocatalyst. In this study, we synthesized ZnO nanoparticles and defined their physical and chemical properties. Also we studied about the application of ZnO nanoparticles as a photocatalyst and try to find a enhancement photocatalytic activity of ZnO nanorticles.. We synthesized ZnO nanoparticles using spray-pyrolysis method and defined the physical and optical properties of ZnO nanoparticles in experiment I. When the ZnO are exposed to UV light, reduction and oxidation(REDOX) reaction will occur on the ZnO surface and generate ${O_2}^-$ and OH radicals. These powerful oxidizing agents are proven to be effective in decomposition of the harmful organic materials and convert them into $CO_2$ and $H_2O$. Therefore, we investigated that the photocatalytic activity was increased through the surface modification of synthesized ZnO nanoparticles. In experiment II, we studied on the stability of ZnO nanoparticles in water. It is well known that ZnO is unstable in water in comparison with $TiO_2$. $Zn(OH)_2$ was formed at the ZnO surface and ZnO become inactive as a photocatalyst when ZnO is present in the solution. Therefore, we prepared synthesized ZnO nanoparticles that were immersed in the water and dried in the oven. After that, we measured photocatalytic activities of prepared samples and find the cause of their photocatalytic activity changes.

• 반도체디스플레이기술학회지
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• 제22권1호
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• pp.18-22
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• 2023

We have investigated the effect of the concentration of oxygen vacancies on the characteristics of Mo-doped ZnO (MZO) thin films for the TCO (transparent conducting oxide). For this purpose, MZO thin films were deposited by RF magnetron sputtering at different substrate temperature from room temperature to 300℃. The electrical resistivity of the MZO films decreases with increasing substrate temperature up to 100℃ and then gradually increases at higher temperatures. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 0.5 sccm. The MZO thin films were preferentially oriented to the (002) direction, regardless of the ambient gases used. The electrical resistivity of the MZO thin films increased with increasing O₂ flow rates, whereas the electrical resistivity decreased sharply under an Ar+H₂ atmosphere and was nearly the same, regardless of the H₂ flow rate used. As the oxygen vacancy concentration increases, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the MZO thin film's electrical characteristics. All the films showed an average transmittance of over 80% in the visible range.

• 공업화학
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• 제26권3호
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• pp.275-279
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• 2015

전도성 고분자인 poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT : PSS)는 우수한 전기 전도도와 광투과도, 유연성을 가지고 있기 때문에 유기태양전지와 유기발광소자의 투명전극으로서 많은 각광을 받고 있다. PEDOT : PSS의 전기 전도도는 솔벤트를 도핑함에 따라 큰 폭으로 증가한다는 사실은 잘 알려져 있다. 본 연구에서는 다양한 솔벤트의 도핑과 솔벤트 후처리 공정에 따른 PEDOT : PSS 박막의 전기 전도도와 구조적 특성 변화를 연구하였다. 솔벤트 도핑으로 PEDOT : PSS의 전도도는 884 S/cm까지 증가하였고, 후처리 공정을 통해서 1131 S/cm의 전도도 값을 얻을 수 있었다. 이러한 전도도의 증가는 PSS 물질이 빠져나가거나 구조적인 재배열에 따른 전도성 PEDOT 입자의 접촉 면적이 증가함에 따른 것으로 사료되고, 광학적인 방법으로 PSS의 추출을 관찰하였다. 솔벤트 후처리 공정은 PEDOT : PSS 박막의 전도도를 향상하는 매우 효과적인 방법으로 확인되었고, 저가형 플렉서블 유기전자소자의 투명전극으로써의 사용이 적합할 것으로 예상된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.11-11
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• 2010

Thin-film-transistors (TFTs) that can be deposited at low temperature have recently attracted lots of applications such as sensors, solar cell and displays, because of the great flexible electronics and transparent. Transparent and flexible transistors are being required that high mobility and large-area uniformity at low temperature [1]. But, unfortunately most of TFT structures are used to be $SiO_2$ as gate dielectric layer. The $SiO_2$ has disadvantaged that it is required to high driving voltage to achieve the same operating efficiency compared with other high-k materials and its thickness is thicker than high-k materials [2]. To solve this problem, we find lots of high-k materials as $HfO_2$, $ZrO_2$, $SiN_x$, $TiO_2$, $Al_2O_3$. Among the High-k materials, $Al_2O_3$ is one of the outstanding materials due to its properties are high dielectric constant ( ~9 ), relatively low leakage current, wide bandgap ( 8.7 eV ) and good device stability. For the realization of flexible displays, all processes should be performed at very low temperatures, but low temperature $Al_2O_3$ grown by sputtering showed deteriorated electrical performance. Further decrease in growth temperature induces a high density of charge traps in the gate oxide/channel. This study investigated the effect of growth temperatures of ALD grown $Al_2O_3$ layers on the TFT device performance. The ALD deposition showed high conformal and defect-free dielectric layers at low temperature compared with other deposition equipments [2]. After ITO was wet-chemically etched with HCl : $HNO_3$ = 3:1, $Al_2O_3$ layer was deposited by ALD at various growth temperatures or lift-off process. Amorphous InGaZnO channel layers were deposited by rf magnetron sputtering at a working pressure of 3 mTorr and $O_2$/Ar (1/29 sccm). The electrodes were formed with electron-beam evaporated Ti (30 nm) and Au (70 nm) bilayer. The TFT devices were heat-treated in a furnace at $300^{\circ}C$ and nitrogen atmosphere for 1 hour by rapid thermal treatment. The electrical properties of the oxide TFTs were measured using semiconductor parameter analyzer (4145B), and LCR meter.

• 한국전자통신학회논문지
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• 제18권5호
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• pp.797-802
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• 2023

본 연구에서는 펄스 레이저 증착법으로 기판 온도에 따른 GZO(Ga₂O₃ : 5 wt %, ZnO : 95 wt %) 박막을 유리 기판에 증착하여 전기적 및 광학적 특성을 조사하였다. XRD측정을 통해 기판 온도에 무관하게 모든 GZO 박막이 c 축으로 우선 성장함을 확인할 수 있었고, 300℃ 에서 증착한 GZO 박막이 반가폭 0.38° 로 가장 우수한 결정성을 나타내었다. 기판 온도가 150에서 300℃ 로 증가함에 따라 GZO 박막의 비저항은 감소하는 경향을 보인 반면에 가시광 영역에서의 평균 투과도는 크게 영향을 받지 않는 것으로 조사되었다. 300℃ 에서 증착한 GZO 박막의 재료 평가 지수가 2.05×10⁴ Ω^-1·cm^-1 로 가장 우수한 값을 나타내었고, 이때 비저항과 가시광 영역에서의 평균 투과도는 각각 3.72 × 10^-4 Ω·cm 과 87.71 % 이었다. 본 연구를 통해 GZO 박막이 매우 유망한 투명 전도막 재료라는 것을 알 수 있었다.