Journal of the Semiconductor & Display Technology (반도체디스플레이기술학회지)

The Korean Society Of Semiconductor & Display Technology (한국반도체디스플레이기술학회)
권호 표지

Effect of the Concentration of Oxygen Vacancies on the Structural and Electrical Characteristics of MZO Thin Films

산소공공 농도에 따른 MZO 투명전도성 박막의 구조적 및 전기적 특성

  • Jong Hyun Lee (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education ) ;
  • Kyu Mann Lee (Future Convergence Engineering Major, Dept. of Energy, Materials and Chemical Engineering, Korea University of Technology and Education )
  • 이종현 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공) ;
  • 이규만 (한국기술교육대학교 에너지신소재화학공학부 미래융합공학전공)
  • Received : 2023.02.13
  • Accepted : 2023.03.07
  • Published : 2023.03.31
Download PDF
⟨ Previous Next ⟩

Abstract

We have investigated the effect of the concentration of oxygen vacancies on the characteristics of Mo-doped ZnO (MZO) thin films for the TCO (transparent conducting oxide). For this purpose, MZO thin films were deposited by RF magnetron sputtering at different substrate temperature from room temperature to 300℃. The electrical resistivity of the MZO films decreases with increasing substrate temperature up to 100℃ and then gradually increases at higher temperatures. To investigate the influences of the ambient gases, the flow rate of oxygen and hydrogen in argon was varied from 0.1 sccm to 0.5 sccm. The MZO thin films were preferentially oriented to the (002) direction, regardless of the ambient gases used. The electrical resistivity of the MZO thin films increased with increasing O2 flow rates, whereas the electrical resistivity decreased sharply under an Ar+H2 atmosphere and was nearly the same, regardless of the H2 flow rate used. As the oxygen vacancy concentration increases, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the MZO thin film's electrical characteristics. All the films showed an average transmittance of over 80% in the visible range.

Keywords

Acknowledgement

본 논문은 교육부의 재원으로 한국연구재단의 BK21 FOUR 사업, 2021학년도 한국기술교육대학교 교수교육연구진흥과제 및 2022년도 교육부의 재원으로 한국연구재단의 지원을 받아 수행된 지자체-대학 협력기반 지역혁신 사업(2021RIS-004)의 결과입니다.

References

  1. K. Ishibashi, K. Hirata, and N. Hosokawa, "Mass spectrometric ion analysis in the sputtering of oxide targets", Journal of Vacuum Science & Technology A., 10, Iss. 4, pp. 1718-1722 (1992). https://doi.org/10.1116/1.577776
  2. K. Tominaga, T. Udea, T. Ao, A. Katkoka, and I. Mori, "ITO films prepared by facing target system", Thin Solid Films, 281-282, pp. 194-197 (1996). https://doi.org/10.1016/0040-6090(96)08611-7
  3. Y. Hoshi, H. Kato, and K. Funatsu, "Structure and electrical properties of ITO thin films deposited at high rate by facing target sputtering", Thin Solid Films, 445, pp. 245-250 (2003). https://doi.org/10.1016/S0040-6090(03)01182-9
  4. Radhouane Bel Hadj Tahar, Takayuki Ban, Yutaka Ohya, and Yasutaka Takahashi, "Tin doped indium oxide thin films: Electrical properties", J. Appl. Phys., 83, pp. 2631-2645 (1998). https://doi.org/10.1063/1.367025
  5. Tania Konry, Robert S. Marks, "Physico-chemical studies of indium tin oxide-coated fiber optic biosensors", Thin Solid Films, 492, pp. 313-321 (2005). https://doi.org/10.1016/j.tsf.2005.07.049
  6. Takafumi Aoi, Nobuto Oka, Yasushi Sato, Ryo Hayashi, Hideya Kumomi and Yuzo Shigesato. "DC sputter deposition of amorphous indium-gallium-zinc-oxide(aIGZO) films with H2O introduction", Thin Solid Films, 518, pp. 3004-3007 (2010) https://doi.org/10.1016/j.tsf.2009.09.176
  7. H. Hosono, "Ionic amorphous oxide semiconductors: Material design, carrier transport, and device application", Journal of non-crystalline solids, 352, pp.851-858 (2002). https://doi.org/10.1016/j.jnoncrysol.2006.01.073
  8. K. Nomura, T. Kamita and H. Hosono, "Effects of diffusion of hydrogen and oxygen on electrical properties of amorphous oxide semiconductor, In-Ga-Zn-O", ECS J Solid State Sci. Technol. 2, p5-p8 (2013)
  9. N. Ito, Y. Sato, P.K. Song, A. Kaijio, K. Inoue, and Y. Shigesato, "Electrical and optical properties of amorphous indium zinc oxide films", Thin Solid Films, 496(1), pp.99-103 (2006). https://doi.org/10.1016/j.tsf.2005.08.257
  10. S. I. Hann and H. B. Kim, "A Study on Properties of RF-sputtered Al-doped ZnO Thin Films Prepared with Different Ar Gas Flow Rates," Appl. Sci. Converg. Technol. 25(6), pp. 145-148 (2016) https://doi.org/10.5757/ASCT.2016.25.6.145
  11. K. L. Hong and K. M. Lee, "Effect of Substrate Temperature and Gas Flow Rate of Atmosphere Gases on Structural and Electrical Properties of AZO Thin Film," Journal of the Semiconductor & Display Technology, 20, pp. 1-6 (2021).
  12. K. K. Banger, Y. Yamashita, K. Mori, R. L. Peterson, T. Leedham, J. Rickard, and H. Sirringhaus, "Low-temperature, high-performance solution-processed metal oxide thin-film transistors formed by a 'sol-gel on chip' process", Nature Materials, 10, pp. 45-50 (2011). https://doi.org/10.1038/nmat2914
  13. Y. S. Jung, J. Y. Seo, D. W. Lee, and D. Y. Jeon, "Influence of DC magnetron sputtering parameters on the properties of amorphous indium zinc oxide thin film", Thin Solid Films, 445, pp.63-71(2003).  https://doi.org/10.1016/j.tsf.2003.09.014