• 한국재료학회지
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• 제31권8호
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• pp.458-464
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• 2021

Tungsten disulfide (WS₂), a typical 2D layerd structure, has received much attention as a pseudocapacitive material because of its high theoretical specific capacity and excellent ion diffusion kinetics. However, WS₂ has critical limits such as poor long-term cycling stability owing to its large volume expansion during cycling and low electrical conductivity. Therefore, to increase the high-rate performance and cycling stability for pseudocapacitors, well-dispersed WS₂ nanoparticles embedded in carbon nanofibers (WS₂-CNFs), including mesopores and S-doping, are prepared by hydrothermal synthesis and sulfurizaiton. These unique nanocomposite electrodes exhibit a high specific capacity (159.6 F g^-1 at 10 mV s^-1), excellent high-rate performance (81.3 F g^-1 at 300 mV s^-1), and long-term cycling stability (55.9 % after 1,000 cycles at 100 mV s^-1). The increased specific capacity is attributed to well-dispersed WS₂ nanoparticles embedded in CNFs that the enlarge active area; the increased high-rate performance is contributed by reduced ion diffusion pathway due to mesoporous CNFs and improved electrical conductivity due to S-doped CNFs; the long-term cycling stability is attributed to the CNFs matrix including WS₂ nanoparticles, which effectively prevent large volume expansion.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• 마이크로전자및패키징학회지
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• 제24권2호
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• pp.49-53
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• 2017

Cl 불순물 도핑에 따른 $SnSe_2$ 이차원 전자소재의 고온(300~450 K) 전도 물성 변화를 고찰하였다. 고상합성법을 통하여, 도핑이 없는 $SnSe_2$ 소재와 Cl이 도핑된 $SnSe_{1.994}Cl_{0.006}$ 소재를 합성하였으며, X선 회절 실험을 통하여, 두 재료 모두 불순물 없는 단일상이 형성되었음을 확인하였다. 비저항의 온도의존성 측정을 통하여, 전기 전도 mechanism이 Cl 도핑에 의해 hopping 전도에서 축퇴 전도로의 전이가 일어남을 관찰할 수 있었으며, 홀효과 측정을 통해 그러한 전도 mechanism의 전이가, Cl의 효과적인 donor 역할에 따른 자유전자의 농도 증가에서 기인한 것임을 확인하였다. 온도에 따른 전자이동도의 변화 분석을 통하여, 도핑이 없는 $SnSe_2$의 고온 전기 전도는 grain boundary 산란이 지배적인 영향을 미치는 반도체 전도 특성을 보이는 반면, Cl 도핑에 따라 grain boundary 산란 효과가 저하되는 금속 전도 특성을 보인다는 것을 알 수 있었다.