• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.4 s.346
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• pp.23-30
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• 2006

This paper describes the short-channel effect(SCE), corner effect of nano-scale MuGFETs(Multiple-Gate FETs) by three-dimensional simulation. We can extract the equivalent gate number of MuGFETs(Double-gate=2, Tri-gate=3, Pi-gate=3.14, Omega-gate=3.4, GAA=4) by threshold voltage model. Using the extracted gate number(n) we can calculate the natural length for each gate devices. We established a scaling theory for MuGFETs, which gives a optimization to avoid short channel effects for the device structure(silicon thickness, gate oxide thickness). It is observed that the comer effects decrease with the reduction of doping concentration and gate oxide thickness when the radius of curvature is larger than 17 % of the channel width.

• Biomolecules & Therapeutics
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• v.5 no.1
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• pp.94-99
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• 1997

Capsaicin is known to be an analgesic agent, affecting the synthesis, storage, , transport and release of substance p, the principal neurotransmitter of pain from periphery to the central nervous system(CNS). DA-5018, a newly synthesized capsaicin derivative has shown potent analgesic effect comparable to that of morphine in various rat models of experimentally inducted acute pairs. In this study the mechanism of analgesic actlvity of DA-5018 was examined. First, the electrically-evoked contraction of guinea pig trachea was inhibited by DA-5018 and these inhibition was recovered by incubation with capsafepine(3$\muM$), capsaicin receptor antagonist and this result suggested that DA-5018 has affinity on capsaicin receptor. The correlation between the norciceptive threshold and the release of substance P was evaluated. In vivo perfusion of slices of the rat spinal cord with DA-5018(10, 100$\muM$) produced a significant increase of the release of substance P and this increase was less than that of capsaicin(10$\muM$). The norciceptive threshold of rat treated with DA-5018(1 mg/kg, p.o) in tall pinch test increased from 2.9$\pm$0.3 to 23.5 $\pm$6.61. Tail pinch latency increased to a maximun at 15 min after DA-5018 treatment and then declined to control values by 120 min. The capsaicin-evoked release ot substance P from the spinal cord slices of rat treated with DA-5018 reduced from 2.38$\pm$ 0.79 to 0.69$\pm$ 0.26 pg/mg wet weight. This reduction reached to a minium at 15 min after DA-5018 treatment and then recovered to control value by 120 min. These results mean that analgesic activity of DA-5018 is due to release of substance P The effect of DA-5018 cream on electrically-evoked neurogenic inflammation of rat saphenous nerve was compared with capsaicin (zostrix-HP). DA-5018 showed 34% inhibition of the neurogenic extravasation while capsaicin showed significant 67% inhibition. This result indicates that the potency of DA-5018 in the release of substance P is less than that of capsaicin. These results suggest that the release of substance P is partially involved in the mechanism of analgesic action of DA-50l8.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.5
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• pp.21-28
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• 2007

In this paper, in order to derive the two-dimensional field effect of n-InAlAs/InGaAs HEMTs, we suggested analytical model by solving the two-dimensional Poisson's equation in both InAlAs and InGaAs regions by taking into account the longitudinal field variation, field-dependent mobility, and the continuity condition of the channel current flowing within the quantum well shaped channel. Derived expressions for long and short channel devices would be applicable to the entire operating regions in a unified manner. Simulation results show that the drain saturation current increases and the threshold voltage decreases as drain voltage increases. Compared with the conventional model, the present model may offer more reasonable explanation for the drain-induced threshold voltage roll-off, the Early effect, and the channel length modulation effect. Furthermore, it is expected that the proposed model would provide more reasonable theoretical basis for analyzing various long and short channel InAlAs/InGaAs HEMT devices.

• Journal of the Korean Vacuum Society
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• v.17 no.5
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• pp.435-441
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• 2008

In this paper, we investigated the electrical properties of triisopropylsilyl (TIPS) pentacene organic thin-film transistor (OTFT) depending on solvent type. We spin coated TIPS pentacene by using chlorobenzene, p-xylene, chloroform, and toluene as solvents. Fabricated OTFT with chlorobenzene shows field-effect mobility of $1.0{\times}10^{-2}cm^2/V{\cdot}s$, on/off ratio of $4.3{\times}10^3$ and threshold voltage of 5.5 V. In contrast, with chloroform, the mobility is $5.8{\times}10^{-7}cm^2/V{\cdot}s$, on/off ratio of $1.1{\times}10^2$ and threshold voltage of 1.7 V. Moreover we measured the grain size of each TIPS pentacene solvent by atomic force microscopy (AFM). From these results, it can be concluded that a solvent with higher boiling point results in better electrical characteristics due to large grain size and high crystallinity of TIPS pentacene layer. In this paper TIPS pentacene with chlorobenzene shows the best electrical properties.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Korean Journal of Organic Agriculture
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• v.22 no.3
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• pp.445-455
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• 2014

The pear sucker (Cacopsylla pyricola) is the most important insect pest in Korea. The hatching rates of overwintered adults laid eggs were observed at 10, 13, 18, and $22^{\circ}C$. The liner model was draw as Y=0.00277X+0.00146(Y=developmental rate, X=temperature) about temperature and developmental rate to eggs. The developmental threshold temperature to eggs was assumed about $-0.83^{\circ}C$. The egg hatching timing over 50% as the accumulated temperature by day maximum temperature $6^{\circ}C$ over from 1st February in 2008, 2009 and 2011 was 429.7, 417.6, and 424.3 degree $^{\circ}C$, respectively, was 3 to 7days before full blooming in pear orchard. On the other hand, the abamectin 1.8EC, lime sulfer, machine oil and 13 kinds of eco-friendly materials were not shown the control effect to the eggs. To mixed stage of pear sucker, the eco-friendly materials over 90% control value were 4 kinds such as a mixture of Azadiractin A+B, Nimbin, Salanin, Meliantriol and Vepol after twice application as 21st May and 5th June in pear growing season, in 2012.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.324-326
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• 2016

In this study, we have investigated indium tin zinc oxide (ITZO) as an active channel for non-volatile memory (NVM) devices. The electrical and memory characteristics of NVM devices using multi-stack gate insulator SiO2/SiOx/SiOxNy (OOxOy) with Si-rich SiOx for charge storage layer were also reported. The transmittance of ITZO films reached over 85%. Besides, ITZO-based NVM devices showed good electrical properties such as high field effect mobility of 25.8 cm2/V.s, low threshold voltage of 0.75 V, low subthreshold slope of 0.23 V/dec and high on-off current ratio of $1.25{\times}107$. The transmission Fourier Transform Infrared spectroscopy of SiOx charge storage layer with the richest silicon content showed an assignment at peaks around 2000-2300 cm-1. It indicates that many silicon phases and defect sources exist in the matrix of the SiOx films. In addition, the characteristics of NVM device showed a retention exceeding 97% of threshold voltage shift after 104 s and greater than 94% after 10 years with low operating voltage of +11 V at only 1 ms programming duration time. Therefore, the NVM fabricated by high transparent ITZO active layer and OOxOy memory stack has been applied for the flexible memory system.

• Journal of Welding and Joining
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• v.13 no.2
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• pp.96-105
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• 1995

A modified method for the analysis of short fatigue crack growth has been presented, and calculations based upon the modified method are compared with experimental results for S45C carbon steel. It is also shown that the modified method is in good agreement with experimental data. The proposed equation for the fatigue crack growth rates includes a material constant which relates the threshold level to the endurance limit, a correction for elastic-plastic behaviour and a means for dealing with the effects of crack closure. In this study one of the modifications is to substitute the Forman' s elastic expression of the stress intensity factor range into the geometrical factor The other is a consideration of the bending effect which is developed from the moment caused by the eccentric cross sectional geometry as the crack grows. Thus, this method is useful for residual life prediction of the mechanical structures as well as the welding structures.

• Journal of Radiation Protection and Research
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• v.31 no.2
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• pp.69-89
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• 2006

Biological mechanisms for ionizing radiation effects are different at low doses than at high doses. Radiation hormesis involves low-dose-induced protection and high-dose-induced harm. The protective component is associated with a reduction in the incidence of cancer below the spontaneous frequency, brought about by activation of defensive and repair processes. The Linear No-Threshold (LNT) hypothesis advocated by the International Commission on Radiological Protection (ICRP) and the Biological Effects of ionizing Radiation (BEIR) Report VII for cancer risk estimations Ignores hormesis and the presence of a threshold. Cancer incidences significantly less than expected have been found in a large number of epidemiological studies including, airline flight personnel, inhabitants of high radiation backgrounds, shipyard workers, nuclear site workers in scores of locations throughout the world, nuclear power utility workers, plutonium workers, military nuclear test site Participants, Japanese A-bomb survivors, residents contaminated by major nuclear accidents, residents of Taiwan living in $^{60}Co$ contaminated buildings, fluoroscopy and mammography patients, radium dial painters, and those exposed to indoor radon. Significantly increased cancer was not found at doses <200 $mSv^*$. Evidence for radiation hormesis was seen in both sexes for acute or chronic exposures, low or high LET radiations, external whole- or partial body exposures, and for internal radionuclides. The ubiquitous nature of the Healthy Worker Effect (HWE)-like responses in cellular, animal and epidemiological studies negates the HWE as an explanation for radiation hormesis. The LNT hypothesis is wrong and does not represent the true nature of the dose-response relationship, since low doses or dose-rates commonly result in thresholds and reduce cancer incidences below the spontaneous rate. Radiation protection organizations should seriously consider the cost and health implications of radiation hormesis.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.6
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• pp.1399-1404
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• 2015

This paper analyzed the phenomenon of drain induced barrier lowering(DIBL) for the ratio of channel length vs. thickness of asymmetric double gate(DG) MOSFET. DIBL, the important secondary effect, is occurred for short channel MOSFET in which drain voltage influences on potential barrier height of source, and significantly affects on transistor characteristics such as threshold voltage movement. The series potential distribution is derived from Poisson's equation to analyze DIBL, and threshold voltage is defined by top gate voltage of asymmetric DGMOSFET in case the off current is 10^-7 A/m. Since asymmetric DGMOSFET has the advantage that channel length and channel thickness can significantly minimize, and short channel effects reduce, DIBL is investigated for the ratio of channel length vs. thickness in this study. As a results, DIBL is greatly influenced by the ratio of channel length vs. thickness. We also know DIBL is greatly changed for bottom gate voltage, top/bottom gate oxide thickness and channel doping concentration.