• Title/Summary/Keyword: threshold effect

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Maternal Perception of Children's Temperament & Parenting Stress (어머니가 지각한 유아의 기질과 양육 스트레스)

  • Jo, Yeong-Shin;Chong, Young-Sook
    • Korean Journal of Human Ecology
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    • v.9 no.3
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    • pp.271-281
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    • 2000
  • The purpose of this study was to explore the effect of maternal perception of children's temperament on parenting stress. The subjects of this study were 303 mothers of four to six-year-old. Evaluations of Parent and Teacher temperament questionnaire for Children 3-7 years of age(Tomas, Chess, & Kom, 1977)(korean version) was used to measure children's temperament, and PDH(Parenting Daily Hassles) was used to measure maternal perception of parenting stress. Data were analyzed by descriptive analysis, t-test, ANOVA, Peasons's Correlation and multiple regression analysis and Duncan test for post test by SPSS WIN program. The results of this study were as follows; First, the average level of maternal perception of children's temperament was the highest in the category of adaptability and the lowest in the category of threshold of responsiveness. Second, maternal perception of children's temperament was significantly different according to children's sex. Boys were perceived higher than girls for the category of activity level. Third, the degree of daily hassles was explained by adaptability, the quality of mood, and activity level relatively, while the intensity of parenting stress could be predicted orderly by adaptability, threshold of responsiveness, attention span & persistence, regularity, and activity level. Fourth, mother's daily hassles was explained 22% valiance by children's temperament such as adaptability, the quality of mood, and activity level. Future research should be done to identify the interaction of temperamental factors.

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The Electrical Characteristics of Low-Temperature Poly-Si Thin-Film Transistors by Different Crystallization Methods

  • Kim, Mun-Su;Jang, Gyeong-Su;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.287.1-287.1
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    • 2014
  • 본 연구에서는 현재 디스플레이에서 가장 널리 이용되는 저온 polycrystalline silicon (poly-Si)의 결정화 방법에 따른 thin-film transistor (TFT)의 전기적 특성을 분석하였다. 분석에 이용된 결정화 방식은 Excimer Laser Annealing (ELA)와 Metal Induced Crystallization (MIC)이다. ELA와 MIC TFTs의 전기적 특성 측정을 통한 분석결과 ELA와 MIC poly-Si TFTs의 전기적 특성 [field-effect mobility (${\mu}_{FE}$), on/off current ratio ($I_{ON}/I_{OFF}$), sub-threshold swing (SS)]은 큰 차이는 없지만, ELA를 이용한 poly-Si TFT의 전기적 특성이 조금 우수하다. 하지만, MIC poly-Si TFT의 경우 threshold voltage ($V_{TH}$)가 0V에 보다 가까울 뿐만 아니라, 전기적 스트레스를 통한 신뢰성 확인 시 ELA poly-Si TFT보다 조금 더 안정적이다. 이는 ELA의 경우 좁은 면에 선형 레이저 빔으로 조사하면서 생기는 hill-lock의 영향으로 표면이 거칠고 균일하지 못하여 바이어스 인가시 생기는 문제이다. 또한 MIC는 금속 촉매를 이용해 결정립 경계를 확장하고 결정 크기를 키워 대면적화에 유리하다. Thermal Stress에서는 (from 293K to 373K) TFT에 점차 높은 온도를 가하자 MIC poly-Si TFT의 경우 off 상태에서 누설 전류 값이 증가하며 열에 민감한 반응을 보이는 것을 확인하였다.

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Improvement of Accuracy in Evaluating Hue Change Time in the Hue Detection Based Transient Liquid Crystals Technique (색상 검출방식의 천이 액정법에서 색상 변화 시간 산정의 정확도 향상)

  • Shin, So-Min;Jeon, Chang-Soo;Jung, Yong-Wun;Kwak, Jae-Su
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.31 no.11
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    • pp.918-925
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    • 2007
  • In this paper, different criteria fur determining hue change time in the hue detection based transient liquid crystals technique were compared. Results showed that methods utilizing threshold of intensity or saturation gave many missing points and quality of the calculated results were strongly depends on the value of threshold. Wider bandwidth in the hue bandwidth method showed better distribution of calculated hue change time, but induced ambiguity in the hue change time. In the time-hue curve fitting method, the distribution of evaluated hue change time was smooth and reasonable, and, by the nature of curve fitting, the noise effect on the hue was successfully considered in calculating of the hue change time. Compared to other methods, it is expected that the time-hue curve fitting method would provide better and accurate hue change time in the hue detection based transient liquid crystals technique.

The Analysis of Degradation Characteristics in Poly-Silicon Thin film Transistor Formed by Solid Phase Crystallization (고상 결정화로 제작한 다결성 실리콘 박막 트랜지스터에서의 열화특성 분석)

  • 정은식;이용재
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.1
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    • pp.26-32
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    • 2003
  • Then-channel poly-Si thin-film transistors (poly-Si TFT's) formed by solid phase crystallization (SPC) method on glass were measured to obtain the electrical parameters such as of I-V characteristics, mobility, leakage current, threshold voltage, and subthreshold slope. Then, devices were analyzed to obtain the reliability and appliability on TFT-LCD with large-size and high density. In n-channel poly-Si TFT with 5$\mu\textrm{m}$/2$\mu\textrm{m}$, 8$\mu\textrm{m}$, 30$\mu\textrm{m}$ devices of channel width/length, the field effect mobilities are 111, 116, 125 $\textrm{cm}^2$/V-s and leakage currents are 0.6, 0.1, and 0.02 pA/$\mu\textrm{m}$, respectively. Low threshold voltage and subthreshold slope, and good ON-OFF ratio are shown, as well. Thus. the poly-Si TFT's used by SPC are expected to be applied on TFT-LCD with large-size and high density, which can integrate the display panel and peripheral circuit on a targe glass substrate.

The immediate effects of 830-nm low-level laser therapy on the myofascial trigger point of the upper trapezius muscle in visual display terminal workers: A randomized, double-blind, clinical trial

  • Lee, Jung-Hoon;Lee, Sun-Min
    • International Journal of Contents
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    • v.7 no.2
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    • pp.59-63
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    • 2011
  • The aim of our study was to evaluate the immediate effects of an 830-nm Aluminium gallium arsenide (GaAlAs) laser, by examining the changes, in pressure-pain threshold (PPT) and tenderness at 3 kg of the myofascial trigger point (MTrP) of the upper trapezius muscle in visual display terminal (VDT) workers in comparison with placebo treatment. Thirty VDT workers (13 males, 17 females) with complaints of upper trapezius muscle were recruited. All participants were given either active GaAlAs laser (830 nm wavelength, 450 mW, 9 J at point) or placebo GaAlAs laser, according to the double-blinded and placebo-controlled trial. Both active and placebo low-level laser therapy (LLLT) treatments showed no significant effect on PPT and tenderness at 3 kg. These results suggest that a higher dosage may be necessary to produce immediate effects when applying LLLT to the MTrP of relatively large muscles such as the upper trapezius muscle.

Multiple 5-Hydroxytryptamine(5-HT) Receptors Are Involved in the Melittin-induced Nociceptive Responses in Rat I. Role of Peripheral 5-HT Receptor

  • Shin, Hong-Kee;Lee, Seo-Eun
    • The Korean Journal of Physiology and Pharmacology
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    • v.11 no.5
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    • pp.221-226
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    • 2007
  • Melittin-induced tonic pain model is characterized by local inflammation, edema, spontaneous flinchings, and sustained mechanical hypersensitivity. These nociceptive responses are mediated through selective activation of capsaicin-sensitive primary afferent fibers by melittin. The present study was undertaken to elucidate the role of peripheral 5-hydroxytryptamine(5-HT) receptors in the melittin-induced nociceptive responses. Changes in mechanical threshold, flinching behaviors and paw thickness were measured in rat intraplantarly injected with melittin($40{\mu}g/paw$) alone or treated together with melittin and 5-HT receptor antagonists. WAY-100635($100{\mu}g\;&\;200{\mu}g/paw$), isamoltane hemifumarate($100{\mu}g\;&\;200{\mu}g/paw$), methysergide maleate($60{\mu}g,\;120{\mu}g\;&\;200{\mu}g/paw$) and ICS-205,930($100{\mu}g\;&\;200{\mu}g/paw$) were intraplantarly injected 20 min before melittin injection. All 5-HT receptor antagonists tested in this experiment significantly attenuated the ability of melittin to reduce mechanical threshold and to induce flinching behaviors. 5-HT receptor antagonists, except ICS-205,930, had mild inhibitory effect on melittin-induced edema. These experimental findings suggest that multiple peripheral 5-HT receptors are involved in the melittin-induced nociceptive responses.

Use of Hearing Aids in Unilateral Cochlear Implantee (편측 인공와우 이식자의 보청기 사용)

  • Heo, Seung-Deok;Kim, Lee-Suk;Jung, Dong-Keun;Choi, Ah-Hyun;Ko, Do-Heung;Kim, Hyun-Gi
    • Speech Sciences
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    • v.12 no.4
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    • pp.197-202
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    • 2005
  • The cochlear implantation(CI) as an useful tool for aural rehabilitation in bilateral severe to profound hearing impairment. However, CI prefer to usually one ear in spite of bilateral hearing impaired. because of the various characteristics of hearing loss, the hearing conservation for the future possibility, and socioeconomic condition of hearing impaired person and their families. The unilateral CI has limitations such as a directional loss, a difficult speech understanding in noise and a neural plasticity. These limitations will be overcome by hearing aid(HA) which is familiar with hearing impairer. but HA fitting for bimodal-binaural hearing are difficult because the difference output characteristic of HA and CI. This study will be confirm realities of use of HA in unilateral cochlear implantee. For this goal, 25(m:f=10:15) child participated who are used to HA for 1 to 17 months. We had telephone interviews with their mother about use of HA, change of auditory performance and own voice. As the results, hearing threshold levels of unimplanted ear, the use of a appropriate HA, implanted and aided hearing threshold level(HTL) are must be considered for successful biomodal-binaural hearing. Especially, implanted and aided HTL should be very useful parameter for a prediction of HA effect and a criterion of selection for bilateral cochlear implantation.

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Device Characteristics and Hot Carrier Lifetime Characteristics Shift Analysis by Carbon Implant used for Vth Adjustment

  • Mun, Seong-Yeol;Kang, Seong-Jun;Joung, Yang-Hee
    • Journal of information and communication convergence engineering
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    • v.11 no.4
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    • pp.288-292
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    • 2013
  • In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

Prediction of Useful Life by Heat Aging of Motor Fan Isolating Rubber (모터팬 방진고무부품의 노화수명 예측)

  • Kim, W.S.;Woo, C.S.;Cho, S.J.;Kim, W.D.
    • Elastomers and Composites
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    • v.37 no.2
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    • pp.107-114
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    • 2002
  • This paper discusses the accelerated heat aging tests were carried out to predict the useful life of EPDM isolating rubber components of ventilation fan motor for clean room. 20% compression set results changes as the threshold are used for assessment of the useful life and the time to threshold value were plotted against reciprocal of absolute temperature to give the Arrhenius plot. The useful life at variable temperatures and activation energy are obtained from the Arrhenius relationship. An accelerated test program to assess useful life can be represented an appreciable investment in time was designed. We also considered the effect of antioxidant agents.

Computing-Inexpensive Matrix Model for Estimating the Threshold Voltage Variation by Workfunction Variation in High-κ/Metal-gate MOSFETs

  • Lee, Gyo Sub;Shin, Changhwan
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.14 no.1
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    • pp.96-99
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    • 2014
  • In high-${\kappa}$/metal-gate (HK/MG) metal-oxide-semiconductor field-effect transistors (MOSFETs) at 45-nm and below, the metal-gate material consists of a number of grains with different grain orientations. Thus, Monte Carlo (MC) simulation of the threshold voltage ($V_{TH}$) variation caused by the workfunction variation (WFV) using a limited number of samples (i.e., approximately a few hundreds of samples) would be misleading. It is ideal to run the MC simulation using a statistically significant number of samples (>~$10^6$); however, it is expensive in terms of the computing requirement for reasonably estimating the WFV-induced $V_{TH}$ variation in the HK/MG MOSFETs. In this work, a simple matrix model is suggested to implement a computing-inexpensive approach to estimate the WFV-induced $V_{TH}$ variation. The suggested model has been verified by experimental data, and the amount of WFV-induced $V_{TH}$ variation, as well as the $V_{TH}$ lowering is revealed.