• Journal of Information Display
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• v.9 no.4
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• pp.35-38
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• 2008

This paper reports the electrical characteristics of polyvinylpyrrolidone (PVPy) and the performance of organic thin-film transistors (OTFTs) with PVPy as a gate insulator. PVPy shows a dielectric constant of about 3 and contributes to the upright growth of pentacene molecules with $15.3\AA$ interplanar spacing. OTFT with PVPy exhibited a field-effect mobility of 0.23 $cm^2$/Vs in the saturation regime and a threshold voltage of -12.7 V. It is notable that there was hardly any threshold voltage shift in the gate voltage sweep direction. Based on this reliable evidence, PVPy is proposed as a new gate insulator for reliable and high-performance OTFTs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.22 no.2
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• pp.268-279
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• 1997

In this paper, we show the movable boundary (MB) method is the effective bandwidth allocation strategy for the ABR service among existing bandwidth allocation methods. The MB method can gurantee the QOS requirement according to the service priority and improve bandwidth utilization using the characteristics of the ABR service. The threshold values of the MB, which have an important effect upon connection blocking probability(CBP) performance of each service, are obtained by simulation. The MB method with the fixed thresholds, however, may not have good performance to variation of input traffic parameters. We suggest the dynamic MB method which changes the threshold values adaptively according to the required bandwidth of input traffic. We also show that the dynamic MB method can urantee the CBP performance according to the service priority regardless of variation of input traffic parameters.

• Advanced Composite Materials
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• v.16 no.3
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• pp.195-206
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• 2007

Carbon nanofiber (CNF)/unsaturated polyester resin (UPR) was prepared by a solvent evaporation method, and the temperature dependency of electrical conductivity was investigated. The CNF/UPR composites had quite a low percolation threshold due to CNF having a larger aspect ratio and being well dispersed in the UPR matrix. The positive temperature coefficient (PTC) was found in the CNF/UPR composites and it showed stronger effect around the percolation threshold. The electrical resistance of the CNF/UPR composites decreased and had lower temperature dependency with increasing numbers of thermal cycles.

• The Journal of the Acoustical Society of Korea
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• v.20 no.2E
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• pp.25-29
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• 2001

In this paper, we propose a new method for selecting the threshold on wavelet packet denoising. In selecting threshold, the method using median is not efficient. Because this method can not recover unvoiced signal corrupted by noise. So we partition a speech signal corrupted by noise into the pure noise section and voiced section using autocorrelation and entropy. The autocorrelation and entropy can reflect disorder of noise. The new method yields more improved denoising effect. Especially unvoiced signal is very nicely reconstructed, and SNR is improved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.170-172
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• 2002

The epilayer of vertically stacked, self-assembled InAs Quantum Dots (QDs)was grown by MBE with solid sources in non-cracking K-cells, and the sample was fabricated to a FET structure using a conventional technology. The device characteristic and performance were studied. At 77K and room temperature, the threshold voltage shift values are 0.75V and 0.35 V, which are caused by the trapping and detrapping of electrons in the quantum dots. Discharging and charging curves form the part of a hysteresis loop to exhibit memory function. The electrical injection of confined electrons in QDs products the threshold voltage shift and memory function with the persistent electron trapping, which shows the potential use for a room temperature application.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.9
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• pp.1375-1380
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• 1989

Mobility reduction parameters are extracted using a method based on the exploitatiion of Id-Vg and Gm-Vg characteristics of short channel n-MOSFETs in strong inversion region at room temperature. It is found that the reduction of the maximum field effect mobility, \ulcornerFE,max, with the channel length is due to i) the difference between the threshold voltage and the gate voltage which corresponds to the maximum transconductance, and ii) the channel length dependence of the mobility attenuation coefficient, \ulcorner The low field mobility, \ulcorner, is found to be independent of the channel length down to 0.25 \ulcorner ofeffective channel length. Also, the channel length reduction, -I, the mobility attenuation coefficient, \ulcorner the threshold voltage, Vt, and the source-drain resistance, Rsd, are determined from the Id-Vg and -gm-Vg characteristics n-MOSFETs.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.6
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• pp.442-446
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• 2003

This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18um triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.

• Transactions on Electrical and Electronic Materials
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• v.18 no.5
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• pp.250-252
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• 2017

High-performance full swing logic inverters were fabricated using amorphous 1 wt% Si doped indium-zinc-oxide (a-SIZO) thin films with different channel layer thicknesses. In the inverter configuration, the threshold voltage was adjusted by varying the thickness of the channel layer. The depletion mode (D-mode) device used a TFT with a channel layer thickness of 60 nm as it exhibited the most negative threshold voltage (-1.67 V). Inverters using enhancement mode (E-mode) devices were fabricated using TFTs with channel layer thicknesses of 20 or 40 nm with excellent subthreshold slope (S.S). Both the inverters exhibited high voltage gain values of 30.74 and 28.56, respectively at $V_{DD}=15V$. It was confirmed that the voltage gain can be improved by increasing the S.S value.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.862-863
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• 2015

This paper presents an improved estimation procedure for the contribution to no-load flux linkage created by the permanent magnet (PM) in interior permanent magnet synchronous machines. In the proposed method, the saturation effect in stator and rotor cores are taken into account by utilizing the frozen permeability method (FPM). This improved procedure can evaluate the contribution for each local element in the PM to the no-load flux linkage. According to the analysis results, an effective PM topology optimal design can be carried out to achieve high utilization ratio of PM in the machine. In order to determine the threshold of the low contribution of PM for removing, one multi-objective optimization model is proposed. Based on the optimal threshold, the final optimal topology design of PM can be achieved.