• 제목/요약/키워드: threading

검색결과 155건 처리시간 0.022초

Growth and Characteristics of Near-UV LED Structures on Wet-etched Patterned Sapphire Substrate

  • Cheong, Hung-Seob;Hong, Chang-Hee
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제6권3호
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    • pp.199-205
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    • 2006
  • Patterned sapphire substrates (PSS) were fabricated by a simple wet etching process with $SiO_2$ stripe masks and a mixed solution of $H_2SO_4$ and $H_3PO_4$. GaN layers were epitaxially grown on the PSS under the optimized 2-step growth condition of metalorganic vapor deposition. During the 1st growth step, GaN layers with triangular cross sections were grown on the selected area of the surface of the PSS, and in the 2nd growth step, the GaN layers were laterally grown and coalesced with neighboring GaN layers. The density of threading dislocations on the surface of the coalesced GaN layer was $2{\sim}4\;{\times}\;10^7\;cm^{-2}$ over the entire region. The epitaxial structure of near-UV light emitting diode (LED) was grown over the GaN layers on the PSS. The internal quantum efficiency and the extraction efficiency of the LED structure grown on the PSS were remarkably increased when compared to the conventional LED structure grown on the flat sapphire substrate. The reduction in TD density and the decrease in the number of times of total internal reflections of the light flux are mainly attributed due to high level of scattering on the PSS.

Bonded SOI wafer의 top Si과 buried oxide layer의 결함에 대한 연구 (Characteristic Study for Defect of Top Si and Buried Oxide Layer on the Bonded SOI Wafer)

  • 김석구;백운규;박재근
    • 한국재료학회지
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    • 제14권6호
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    • pp.413-419
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    • 2004
  • Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

Real-time Fluorescence Lifetime Imaging Microscopy Implementation by Analog Mean-Delay Method through Parallel Data Processing

  • Kim, Jayul;Ryu, Jiheun;Gweon, Daegab
    • Applied Microscopy
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    • 제46권1호
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    • pp.6-13
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    • 2016
  • Fluorescence lifetime imaging microscopy (FLIM) has been considered an effective technique to investigate chemical properties of the specimens, especially of biological samples. Despite of this advantageous trait, researchers in this field have had difficulties applying FLIM to their systems because acquiring an image using FLIM consumes too much time. Although analog mean-delay (AMD) method was introduced to enhance the imaging speed of commonly used FLIM based on time-correlated single photon counting (TCSPC), a real-time image reconstruction using AMD method has not been implemented due to its data processing obstacles. In this paper, we introduce a real-time image restoration of AMD-FLIM through fast parallel data processing by using Threading Building Blocks (TBB; Intel) and octa-core processor (i7-5960x; Intel). Frame rate of 3.8 frames per second was achieved in $1,024{\times}1,024$ resolution with over 4 million lifetime determinations per second and measurement error within 10%. This image acquisition speed is 184 times faster than that of single-channel TCSPC and 9.2 times faster than that of 8-channel TCSPC (state-of-art photon counting rate of 80 million counts per second) with the same lifetime accuracy of 10% and the same pixel resolution.

Snort와 Suricata의 탐지 기능과 성능에 대한 비교 연구 (A Comparative Study on Function and Performance of Snort and Suricata)

  • 정명기;안성진;박원형
    • 융합보안논문지
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    • 제14권5호
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    • pp.3-8
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    • 2014
  • 본 논문에서는 널리 사용되는 침입 탐지 시스템인 Snort와 Suricata에 대해서 탐지 기능 측면과 성능 측면을 비교해 보고자 하였다. 구체적으로 Snort와 비교해보았을 때 Suricata에는 추가된 탐지 기능과 새로 도입된 멀티 스레딩이 패킷 처리 속도에 가져다 준 변화에 대해 분석해보고자 하였다. 그 결과, Suricata에는 기존의 Snort에서는 존재하지 않았던 Protocol Identification과 HTTP Normalizer & Parser, 그리고 File Identification 기능이 추가되었다는 점을 발견할 수 있었다. 또한, 양적 처리 성능 측면에서도 Suricata의 경우 작동하는 CPU Core의 개수가 늘어날수록 Snort와의 처리성능(PPS, Packets Per Second)의 차이가 벌어지는 것으로 나타났다. 따라서 이러한 점을 볼 때, Suricata는 양적/질적측면에서 모두 Snort보다 개선된 것으로 나타났기 때문에 Snort의 대안으로 사용되기에 적절하다는 결론을 내릴 수 있었다.

Merkle Tree 기반의 로그인증 메커니즘 설계 및 분석 (Design and Analysis of the Log Authentication Mechanism based on the Merkle Tree)

  • 이정엽;박창섭
    • 융합보안논문지
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    • 제17권1호
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    • pp.3-13
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    • 2017
  • 보안로그의 활용범위가 다양해짐에 따라 저장된 로그 데이터에 대한 무결성의 중요성이 높아지고 있다. 특히, 저장된 로그 데이터는 시스템에 침입한 공격자들이 자신의 흔적을 없애기 위해 우선적으로 조작되는 대상이다. 키 정보가 노출이 된 이후의 로그 데이터의 안전성은 보장하지 못하지만, 그 이전에 축적된 로그 데이터 무결성의 전방 안전성을 보장하는 다양한 이론적 기법들이 소개되었다. 이런 기법들의 인증태그들은 선형 해시체인을 기반으로 하고 있다. 이 경우 부분 검증이 어렵고, 인증태그 생성속도와 검증속도를 높이기 힘들다. 본 논문에서는, 부분 검증이 용이하고 멀티 스레딩이 적용 가능한 Merkle Tree 기반의 로그인증 메커니즘을 제안한다.

Correlation between Physical Defects and Performance in AlGaN/GaN High Electron Mobility Transistor Devices

  • Park, Seong-Yong;Lee, Tae-Hun;Kim, Moon-J.
    • Transactions on Electrical and Electronic Materials
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    • 제11권2호
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    • pp.49-53
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    • 2010
  • Microstructural origins of leakage current and physical degradation during operation in product-quality AlGaN/GaN high electron mobility transistor (HEMT) devices were investigated using photon emission microscopy (PEM) and transmission electron microscopy (TEM). AlGaN/GaN HEMTs were fabricated with metal organic chemical vapor deposition on semi-insulating SiC substrates. Photon emission irregularity, which is indicative of gate leakage current, was measured by PEM. Site specific TEM analysis assisted by a focused ion beam revealed the presence of threading dislocations in the channel below the gate at the position showing strong photon emissions. Observation of electrically degraded devices after life tests revealed crack/pit shaped defects next to the drain in the top AlGaN layer. The morphology of the defects was three-dimensionally investigated via electron tomography.

Luminescence Properties of Blue Light-emitting Diode Grown on Patterned Sapphire Substrate

  • Wang, Dang-Hui;Xu, Tian-Han;Wang, Lei
    • Current Optics and Photonics
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    • 제1권4호
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    • pp.358-363
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    • 2017
  • In this study, we present a detailed investigation of luminescence properties of a blue light-emitting diode using InGaN/GaN (indium component is 17.43%) multiple quantum wells as the active region grown on patterned sapphire substrate by low-pressure metal-organic chemical vapor deposition (MOCVD). High-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), Raman scattering (RS) and photoluminescence (PL) measurements are employed to study the crystal quality, the threading dislocation density, surface morphology, residual strain existing in the active region and optical properties. We conclude that the crystalline quality and surface morphology can be greatly improved, the red-shift of peak wavelength is eliminated and the superior blue light LED can be obtained because the residual strain that existed in the active region can be relaxed when the LED is grown on patterned sapphire substrate (PSS). We discuss the mechanisms of growing on PSS to enhance the superior luminescence properties of blue light LED from the viewpoint of residual strain in the active region.

Zynq SoC에서 재구성 가능한 하드웨어 가속기를 지원하는 멀티쓰레딩 시스템 설계 (Multi-threaded system to support reconfigurable hardware accelerators on Zynq SoC)

  • 신현준;이주흥
    • 전기전자학회논문지
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    • 제24권1호
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    • pp.186-193
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    • 2020
  • 본 논문에서는 Zynq SoC 환경에서 재구성 가능한 하드웨어 가속기를 지원하는 멀티쓰레딩 시스템을 제안한다. 압축된 정지 영상의 픽셀 데이터를 복원하는 고성능 JPEG 디코더를 구현하고 2D-IDCT 함수를 재구성 가능한 하드웨어 가속기로 설계하여 성능을 검증한다. 구현된 시스템에서 최대 4개의 재구성 가능한 하드웨어 가속기는 소프트웨어 쓰레드와 동기화되어 연산을 수행할 수 있으며 이미지 해상도와 압축률에 따라 다른 성능 향상을 보인다. 1080p 해상도 영상의 경우 17:1의 압축률에서 최대 79.11배의 성능 향상과 99fps의 throughput 속도를 보여준다.

Two-Level Tries: A General Acceleration Structure for Parallel Routing Table Accesses

  • Mingche, Lai;Lei, Gao
    • Journal of Communications and Networks
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    • 제13권4호
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    • pp.408-417
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    • 2011
  • The stringent performance requirement for the high efficiency of routing protocols on the Internet can be satisfied by exploiting the threaded border gateway protocol (TBGP) on multi-cores, but the state-of-the-art TBGP performance is restricted by a mass of contentions when racing to access the routing table. To this end, the highly-efficient parallel access approach appears to be a promising solution to achieve ultra-high route processing speed. This study proposes a general routing table structure consisting of two-level tries for fast parallel access, and it presents a heuristic-based divide-and-recombine algorithm to solve a mass of contentions, thereby accelerating the parallel route updates of multi-threading and boosting the TBGP performance. As a projected TBGP, this study also modifies the table operations such as insert and lookup, and validates their correctness according to the behaviors of the traditional routing table. Our evaluations on a dual quad-core Xeon server show that the parallel access contentions decrease sharply by 92.5% versus the traditional routing table, and the maximal update time of a thread is reduced by 56.8 % on average with little overhead. The convergence time of update messages are improved by 49.7%.

삼차원 와선의 비정상 거동에 의한 원거리 음압의 수치해석 (Numerical Calculation of the Far Field Acoustic Pressure from the Unsteady Motion of the Three-dimensional Vortex Filament)

  • 유기완;이덕주
    • 대한기계학회논문집A
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    • 제21권6호
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    • pp.942-950
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    • 1997
  • Far field acoustic pressure from the evolution and interaction of three-dimensional vortex filament is calculated numerically. A vortex ring is a typical example of the three-dimensional vortex filament. An elliptic vortex ring emits a strong sound signal due to significant distortion and stretching of the vortec filament. The far field acoustic pressure is linearly dependent on the third time derivatives of the vortex positions. A numerical scheme of high resolution is employed to describe in detail the elliptic vortex ring motions which ar highly nonlinear. Descretized vortex filaments are interpolated by using a parametric blending function to remove a possible numerical instability. The distorted vortex filament, owing to the self-induced and the induced velocity from the other vortex segments, is redistributed at each time step. The accuracy and efficiency of the scheme are validated by comparisons with the analytic solution of circular vortex ring interaction.