• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.969-975
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• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• Proceedings of the IEEK Conference
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• 2001.06b
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• pp.273-276
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• 2001

The origin of image-slicking in metal-insulator-metal type thin-film-diode(TFD) LCDs is the asymmetric current-voltage(I-V) characteristic of TFD element. we developed that MIM-LCDs have reduced-image-sticking and perfect symmetry characteristic. One-Time Post-Annealing (OPTA) heat treatment process was introduced to reduce the asymmetry and shift of the I-V characteristics, respectively. OPTA means that the whole layers of lower metal, insulator, and uuper metal are annealed at one time. The treatment temperatures and fabricated process of TFD element were under foot. Also, this low temperature fabricated process allows the application of plastic substrates.

• Journal of Aerospace System Engineering
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• v.14 no.2
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• pp.28-35
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• 2020

In this paper, we present a design for a retraction-type actuator (ReACT) that has the characteristics of both thermomechanical metamaterials and displacement amplification mechanisms. The ReACT consists of an actuating bar, a diamond-shaped displacement amplification (DA) structure, and a slot for loading thin-film heaters formed through the actuating bar. When power is supplied to the thin film heater, the actuating bars contacting the heater thermally expand, and the diamond-shaped DA structures retract in the longitudinal direction. The performance characteristics of the ReACT, such as temperature distribution and retracting displacement, were calculated with thermomechanical analysis methods using the finite element method (FEM). Subsequently, the ReACTs were fabricated using a polymer-based 3D printer that can easily execute complex structures, and the performance of the ReACT was evaluated through repeated tests under various temperature conditions. The results of the performance evaluation were compared with the results of the FEM analysis.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.55-58
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• 1996

A new type CuN/Cu/CuN thin film electrode material with high adhesion to glass was developed by the dc reactive planar magnetron sputtering system for the PDP(Plasma Display Panel). The adhesive force of the CuxN thin film was in the range of 20∼40(N) under the conditions of the N$_2$ partial pressure of 15%, discharge current of 70mA, discharge voltage of 450v and substrate bias voltage of -100V. The adhesive force was depended on the N$_2$ partial Pressure, discharge current and substrate bias voltage.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.152-155
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• 1994

The purpose of this paper is to develope an electron beam resist by the plasma polymerization. Plasma co-polymerized resist was prepared using an interelectrode gas-flow-type reactor. And then delineated pattern in the resist was developed with gas flow type reactor using Ar and O$_2$ gas as etching gas. We study about the effects of discharge power and mixing rate of the copolymerized thin film. The characteristics of molecular structure of thin film was investigated by FT-lR, DSC and GPC, and then was discussed in relation to its quality as a resist.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.125-130
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• 1992

A resistive-type humidity sensors have been fabricated using cross-linked PMMA thin film as sensing material and their humidity characteristics have been investigated. The sensor coated of the cross-linked PMMA with PVA exhibited largely variation of resistance by increase of relative humidity and less than 3% of hysteresis. Furthermore, the fabricated sensor exhibited superior long-term stability. The response time of the PMMA humidity sensor was about 7 min. for adsorption and about 5 min. for desorption respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.64-66
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• 2009

We obtained high performance of n-type organic thin film transistors (OTFTs) using a solution process. N, N' bis-(octyl-)-dicyanoperylene-3,4:9,10-bis(dicarboximide) (PDI-$8CN_2$) in ambient air. Low work function interlayer on source/drain is needed to enhance the electron injection to low LUMO level of n-type organic semiconductor. By using self-assembled monolayer (SAM) the field-effect mobility of 0.33 $cm^2$/Vs was achieved.

• Electrical & Electronic Materials
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• v.9 no.10
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• pp.1008-1012
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• 1996

I-V, C-V characteristics of inverted staggered type hydrogenerated amorphous silicon thin film transistor(a-Si:H TFT) was studied and experimentally verified. The results show that the log-log plot of drain current increased by voltage increase. The saturated drain current of DC output characteristics increased at a fixed gate voltage. According to the increase of gate voltage, activation energy of electron and the increasing width of Id at high voltage were decreased. Id saturation current saturated at high Vd over 4.5V, Vg-ld hysteresis characteristic curves occurred between -15V and 15V of Vg. Hysteresis current decreased at low voltage of -15V and increased at high voltage of 15V.

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2006.09a
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• pp.254-255
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• 2006

Powder library of pseudo four components Li-Ni-Co-Ti compounds were prepared for exploring the composition region with the single phase of the layer-type structure by using combinatorial high-throuput preparation system "M-ist Combi" based on electrostatic spray deposition method. The new layer-type compounds were found wider composition region than the previous report. This process is promising way to find multi component functional materials.

• Journal of Aerospace System Engineering
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• v.15 no.6
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• pp.1-9
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• 2021

In this study, a new design of an extension-type actuator (ExACT) is proposed based on a chevron structure with displacement amplification mechanisms by local heating. ExACT comprises diamond-shaped displacement amplification structures (DASs) containing axially oriented V-shaped chevron beams, a support bar that restricts lateral heat deformation, and a loading slot for thin-film heaters. On heating the thin film heater, the diamond-shaped DASs undergo thermal expansion. However, lateral expansion is restricted by the support bar, leading to displacement amplification in the axial direction. The performance parameters of ExACT such as temperature distribution and extended displacement is calculated using thermo-mechanical analysis methods with the finite element method (FEM) tool. Subsequently, the ExACTs are fabricated using a polymer-based 3D printer capable of reproducing complex structures, and the performance of ExACTs is evaluated under various temperature conditions. Finally, the performance evaluation results were compared with those of the FEM analysis.