Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Failure Analysis of SLS Polysilicon TFT Devices for Enhanced Performances

SLS 다결정 실리콘 TFT 소자의 불량분석에 관한 연구

  • Published : 2002.11.01
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Abstract

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

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References

  1. 전기전자재료학회논문지 v.11 no.10 Electrical characteristics and leakage current mechanism of high temperature poly-si thin film transistors 이현중;이경택;박세근;박우상;김형준
  2. IEEE Transactions on Electron Devices v.36 no.12 High performance TFT's fabricated by XeCl excimer laser annealing of hydrogenated amorphous silicon film Kenji Sera;Fujio Okumura;Hiriyuki Uchida;Shinji Itoh https://doi.org/10.1109/16.40970
  3. MRS Bulletin Crystalline si films for integrated activematrix liquid crystal display James S. Im;Robert S. Sposili
  4. Appl. Phys. Lett. v.69 no.19 Sequential lateral solidification of thin films on SiO₂ James S. Im;Robert S. Sposili
  5. IEEE Electron Device Lett. v.19 no.8 Low temperature single crystal Si TFT's fabricated on Si films processed via sequential lateral solidification M. A. Crowder;P. G. Carey;P. M. Smith;Robert S. Sposili;Hans S. Cho;James S. Im https://doi.org/10.1109/55.704408
  6. KIEE Annual Autumn Conference 단결정 실리콘 TFT 제작을 위한SLS 공정 이윤재;박정호
  7. 전기전자재료학회논문지 v.11 no.7 Characteristics of polysilicon thin film transistor with LDD structure 황한욱;황성수;김용상
  8. 대한전기학회 하계학술대회 산학협동위원회 특별session SLS를 이용한 poly-Si TFT 제작과 채널길이 변화에 따른 소자의 특성분석 고영운;이윤재;김동환;박정호
  9. Proc. MRS Symp. v.621 Y. H. Jung;J. M. Yoon;M. S. Yang;W. K. Park
  10. IEE. IRPS New applications of focused ion beam technique to failure analysis and process monitoring of VLSI K. Nikawa;K. Nasu;M. Murase
  11. 전기전자재료학회논문지 v.9 no.10 A study on the off-current mechanism of poly-Si thin film transistors fabricated at low temperature 진교원;김진;이진민;김동진
  12. Silicon Process v.2 S. Wolf
  13. Nuclear Instruments and Methods in Physics Research v.121 Metal contacts on shallow junctions L. J. Chen;S. L. Vheng;B. Y. Tsui https://doi.org/10.1016/S0168-583X(96)00582-4
  14. IEEE International Symposium on Semiconductor Manufacturing Conference Etch damage removal process without Si substrate loss employing hydrogen plasma after treatment Sumio Sekiuyama;Shunji Hayashi;Kenya Iwasaki
  15. J. Materials science: Materials in Electronics v.9 no.2 Effect of reactive ion etching and post etching annealing on the electrical characteristics of indium-tin oxide/silicon junction Bi-Shiou Chiou;King Long https://doi.org/10.1023/A:1008869724623