• Transactions on Electrical and Electronic Materials
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• v.11 no.6
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• pp.253-256
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• 2010

Different active layer thicknesses for zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric using injector type atomic layer deposition. The properties of the ZnO TFTs were influenced by the active thickness and width-to-length (W/L) ratio of the device. The threshold voltage of ZnO TFTs shifted positively as the active layer thickness decreased, while the subthreshold slope decreased. The W/L ratio of ZnO TFTs also affected the mobility and subthreshold slope. An optimized TFT structure exhibited an on-tooff current ratio of above 106 with solid saturation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.197-197
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• 2008

There are fast growing demands for new dielectric materials for passive capacitors of RF-ICs and other wireless applications. One of the bulk microwave dielectric materials which have superior properties is $ZrTiO_4$ due to its large dielectric constant and high quality factor. Therefore, $ZrTiO_4$ is worth studying as a form of thin film to be applied for passive capacitors of integrated circuits. In this study, we fabricated metal-insulator-metal type capacitors with $ZrTiO_4$ dielectric thin film, and evaluated their capacitor properties.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.103-104
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• 2009

We proposed the laminate thin film asymmetric Extruded-closed-polygon diffusion pattern that was able to improve the performance of back light unit. Developed a pattern of brightness and bright line, half-power angle attribute the improved performance in the uniform, and through the formation of a thin film stackable diffusion layer 970% improved perpendicularity brightness, and 580% improved horizontality brightness.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.332-334
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• 1995

In this paper, structual, optical properties of CdTe thin films and photovoltaic properties of thin film CdS/CdTe solar cell prepared by thermal vacuum evaporation were studied. The crystal structure of CdTe films was zircblend type with preferential orientation of the (111)plane parallel to the substrate. The heat treatment appears to stabilize this structure. The result of optical absorption and transmittance show that solar radiation with energy larger than bandgap is almost completely absorbed within an about $2{\mu}m$ thickness of the evaporated CdTe layer and transmittance of the CdTe film was larger with increasing annealing temperature. It was found that CdS/CdTe solar cell characteristics were improved by the heat treatment.

• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.29 no.4
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• pp.272-278
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• 1993

The trimethylamine-sensing characteristics of ZnO based thin film semiconductors and the sensitivity enhancement by squttering conditions have been investigated to develop a new type sensor for detecting fish freshness. The sensor fabricated with a 300nm of ZnO thin film with 4 wt% Al sub(2) O sub(3) and 1 wt% TiO sub(2) exhibited the highest sensitivity of 155 at 30$0^{\circ}C$ of working temperature and to the 240 ppm TMA gas. Deposition of ZnO thin film using a RF magnetron sputter was carried out at a pressure of 10 super(-2) Torr in pure oxygen gas with an RF power of 100W. The sensor exhibited a large response to the actual gases produced by a mackerel at an early stage of decomposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.456-459
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• 2002

This paper describes fabrication and characteristics of ceramic pressure sensor for working at high temperature. The proposed pressure sensor consists of a Ta-N thin-film, patterned on a Wheatstone bridge configuration, sputter deposited onto thermally oxidized Si membranes with an aluminium interconnection layer. The fabricated pressure sensor presents a low temperature coefficient of resistance, high sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.097~1.21mV/$V{\cdot}kgf/cm^2$ in the temperature range of $25{\sim}200^{\circ}C$ and the maximum non-linearity is 0.43 %FS.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.45 no.3
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• pp.438-443
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• 1996

The effect of plasma polymerization conditions on the structure of the plasma polymerized styrene were investigated by using Fourier Transform Infrared Ray(FT-IR), Differential Scanning Calorimetry (DSC), Gel Permeation Chromatography(GPC). Plasma polymerized thin film was prepared using an interelectrode inductively coupled gas-flow-type reactor. We show that polymerization parameters of thin film affect sensitivity and etching resistance of plasma polymerized styrene is 1.41~3.93, and deposition rate of that are 32~383[.angs./min] with discharge power. Swelling and etching resistance becomes more improved with increasing discharge power during plasma polymerization. (author). 11 refs., 10 figs., 1 tab.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.379-382
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• 1999

In this paper, we investigated the characteristics of MgO thin film prepared by unbalanced magnetron sputtering(UBMS) in surface discharge type AC PDP The minimum discharge voltage is obtained for the sample of substrate bias voltage-10V. Moreover the anti-sputtering characteristics of MgO thin film by UBMS is improved about 40% than one of balanced magnetron sputtering(BMS)

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.587-590
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• 2000

This paper presents the characteristics of metal thin-film pressure sensors. The micro pressure sensors consists of a chrom thin-film, patterned on a Wheatstone bridge configuration, sputter-deposited onto thermally oxidized Si wafer an aluminium interconnection layer. The fabricated micro pressure sensors shows a low temperature coefficient of resistance, high-sensitivity, low non-linearity and excellent temperature stability. The sensitivity is 1.16~1.21 mV/V.kgf/$\textrm{cm}^2$ in the temperature range of 25~l0$0^{\circ}C$ and the maximum non-linearity is 0.21 %FS.

• Membrane Journal
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• v.12 no.1
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• pp.28-40
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• 2002

The primary objective of this study is to elucidate the contribution of the electrostatic and molecula structural properties of an active layer of the thin film compsite (TFC) membranes to fouling tendency. The studies of surface morphology and surface charge were very effective in understanding fouling behaviors of the reverse osmosis (RO) membranes which were the thin film composite type of ployamide. Results of microscopic morphology analyzed by atomic force microscopy (AFM) and surface charge analyzed by electrokinetic analyzer (EKA) showed important factors affecting the fouling of RO membranes. The active layer of the composite membrane possessing realtively neutral streaming charge and less roughness provided a RO membrane with slowly decreasing flux.