Transactions on Electrical and Electronic Materials

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effect of Channel Scaling on Zinc Oxide Thin-Film Transistor Prepared by Atomic Layer Deposition

  • Received : 2010.08.25
  • Accepted : 2010.11.23
  • Published : 2010.12.25
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Abstract

Different active layer thicknesses for zinc oxide (ZnO) bottom-contact thin-film transistors (TFTs) were fabricated with a poly-4-vinyphenol polymeric dielectric using injector type atomic layer deposition. The properties of the ZnO TFTs were influenced by the active thickness and width-to-length (W/L) ratio of the device. The threshold voltage of ZnO TFTs shifted positively as the active layer thickness decreased, while the subthreshold slope decreased. The W/L ratio of ZnO TFTs also affected the mobility and subthreshold slope. An optimized TFT structure exhibited an on-tooff current ratio of above 106 with solid saturation.

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