• Title/Summary/Keyword: thin-film type

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Chemical Reaction of Pentacene Growth on Hybrid Type Insulator by Annealing Temperature (하이브리드 타입 절연막 위에서 열처리 온도에 따른 펜타센 생성과 관련된 화학반응)

  • Oh Teresa
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.2 s.344
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    • pp.13-17
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    • 2006
  • Pentacene channel for organic thin film transistor was deposited on the SiOC film by thermal evaporation. The growth of pentacene is related with the Diels-Alder reaction and the nucleophilic reaction by the thermal induction. The surface is an important factor to control the recursive Diels-Alder reaction for growing of pentacene on SiOC far The terminal C=C double bond of pentacene molecule was broken easily as a result of attack of the nucleophilic reagents on the surface of SiOC film. The nucleophilic reaction can be accelerated by increasing temperature on surface, and it maks pentacene to grow hardly on the SiOC film with a flow rate ratio of $O_2/(BTMSM+O_2)=0.5$ due to its inorganic property. The nucleophlic reaction mechanism is $SN_2(bimolecular nucleophilic substitution)$ type.

Defect Analysis via Photoluminescence of p-type ZnO:N Thin Film fabricated by RF Magnetron Sputtering

  • Jin, Hu-Jie;So, Soon-Jin;Park, Choon-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.3
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    • pp.202-206
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    • 2007
  • ZnO is a promising material to make high efficient ultraviolet(UV) or blue light emitting diodes(LEDs) because of its large binding energy and energy bandgap. In this study, we prepared ZnO thin films with p-type conductivity on silicon(100) substrates by RF magnetron sputtering in the mixture of $N_2$ and $O_2$. The process was accompanied by low pressure in-situ annealing in $O_2$ at $600^{\circ}C$ and $800^{\circ}C$ respectively. Hall effect in Van der Pauw configuration showed that the N-doped ZnO film annealed at $800^{\circ}C$ has p-type conductivity. Photoluminescence(PL) spectrum of the film annealed at $800^{\circ}C$ showed UV emission related to exciton and bound to donor-acceptor pair(DAP) as well as visible emission related to many intrinsic defects.

Two-step Electroless Plated Pt Ohmic Contacts to p-type InGaAs

  • Im, Hung-Su;Wang, Kai;Kim, Geun-Woo;Chang, Ji-Ho;Koo, Bon-Heun
    • Journal of the Korean institute of surface engineering
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    • v.43 no.2
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    • pp.47-50
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    • 2010
  • This work discusses a two-step electroless plating method for preparing a Pt thin film on p-type InGaAs substrate, which is defined as Pt I and Pt II. A thin Pt catalytic layer formed in Pt I bath on the substrate at $65^{\circ}C$. In the following Pt II bath, thick Pt films then easily grew on the sensitized layer on InGaAs previously formed in the Pt I bath. The growth of Pt film is strongly influenced by the plating temperature and pH value. To study the plating time effect, the plating of Pt II bath is 5 to 40 min at $80^{\circ}C$ after using Pt I bath at 50~$65^{\circ}C$ for 5min of pH 8~13. Pt film for ohmic contact to p-type InGaAs was successfully prepared by using the two-step Pt electroless plating.

Active-Matrix Cathodes though Integration of Amorphous Silicon Thin-Film Transistor with triode -and Diode-Type field Emitters

  • Song, Yoon-Ho;Cho, Young-Rae;Hwang, Chi-Sun;Kim, Bong-Chul;Ahn, Seong-Deok;Chung, Choong-Heui;Kim, Do-Hyung;Uhm, Hyun-Seok;Lee, Jin-Ho;Cho, Kyoung-Ik
    • Journal of Information Display
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    • v.2 no.3
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    • pp.72-77
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    • 2001
  • Amorphous silicon thin-film transistors (a-Si TFTs) were incorporated into Mo-tip-based triode-type field emitters and diode-type ones of carbon nanotubes for an active-matrix cathode (AMC) plate of field emission displays. Also, we developed a novel surface-treatment process for the Mo-tip fabrication, which gleatly enhanced in the stability of field emission. The field emission currents of AMC plates on glass substrate were well controlled by the gate bias of a-Si TFTs. Active-matrix field emission displays (AMFEDs) with these AMC plates were demonstrated in a vacuum chamber, showing low-voltage matrix addressing, good stability and reliability of field emission, and highly uniform light emissions from the anode plate with phosphors. The optimum design of AMFEDs including a-Si TFTs and a new light shield/focusing grid is discussed.

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Optical Analysis of p-Type ZnO:Al Thin Films

  • Jin, Hu-Jie;So, Byung-Moon;Park, Bok-Kee;Park, Choon-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.68-69
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    • 2007
  • We have prepared p-type ZnO:Al films in pure oxygen ambient on n-type Si (100) and homo buffer layers by RF magnetron sputtering system. Hall effect measurement shows that the film annealed at $600^{\circ}C$ possesses p-type conductivity and the film annealed $800^{\circ}C$ does not. PL spectra show different properties of p- and n-type ZnO film. The corresponding peaks of PL spectra of p- and n-type show at about same positions. The intensities of high photon energy of n-type film on buffer shows decreasing tendency.

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Fabrication and Characteristics of pressure sensors for high pressure (고압용 압력센서의 제작과 그 특성)

  • Choi, Sung-Kyu;Seo, Jeong-Hwan;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 2001.07c
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    • pp.1375-1377
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    • 2001
  • This paper describes the fabrication and characteristics of CrN thin-film type pessure sensors, in which the sensing elements were deposited on SUS. 630 diaphragm by DC reactive magnetron sputtering in an argon-nitride atmosphere(Ar-(10%) $N_2$). The optimized condition of CrN thin-film sensing elements was thickness range of 3500$\AA$ and annealing condition($300^{\circ}C$, 3 hr) in Ar-10 %$N_2$ deposition atmosphere. Under optimum conditions, the CrN thin-films for strain gauges is obtained a high resistivity, $\rho$=1147.65 ${\mu}{\Omega}$cm, a low temperature coefficient of resistance, TCR=-186 ppm/$^{\circ}C$ and a high temporal stability with a good longitudinal, 11.17. The output sensitivity of fabricated CrN thin-film type pressure sensors is 2.36 mV/V, 4$\sim$20 mA and the maximum non-linearity is 0.4 %FS and hysteresis is less than 0.2 %FS..

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Breakdown Voltage and Electrical Characteristics of Organic Thin Film (유기박막의 파괴전압과 전기특성)

  • Song, Jin-Won;Kang, Yong-Chul;Kim, Hyung-Gon;Lee, Woo-Sun;Chung, Hun-Sang;Chang, Hee-Dong;Lee, Kyung-Sup
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1497-1499
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    • 2000
  • We give pressure stimulation into organic thin films and then manufacture a device under the accumulation condition that the state surface pressure is 30 [mN/m]. LB layers of Arac. acid deposited by LB method were deposited onto y-type silicon wafer as y-type film. In processing of a device manufacture. we can see the process is good from the change of a surface pressure for organic thin films and transfer ratio of area per molecule. The structure of manufactured device is Au/arachidic acid/Al. the number of accumulated layers are 9$\sim$21. Also. we then examined of the MIM device by means of I-V. The I-V characteristic of the device is measured from -3 to +3[V]. The insulation property of a thin film is better as the distance between electrodes is larger.

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Effect of the Buffered-template on the Property of YBCO Superconducting Film Deposited by MOCVD Method (MOCVD 법에 의해 제조된 YBCO 초전도 박막의 물성에 대한 완충층 템플릿의 영향)

  • Jun, Byung-Hyuk;Choi, Jun-Kyu;Kim, Chan-Joong
    • Progress in Superconductivity
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    • v.8 no.1
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    • pp.27-32
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    • 2006
  • [$YBa_2Cu_3O_{7-x}$] thin films were deposited on various buffered-templates by a metal organic chemical vapor deposition(MOCVD). Three different templates of $CeO_2/YSZ/CeO_2/pure-Ni(CYC),\;CeO_2/YSZ/Y_2O_3/Ni-3at.%W(YYC)$ and $CeO_2/IBAD-YSZ$/stainless steel were used. The Ni and Ni-W alloy tapes were biaxially textured by cold rolling and annealing heat treatment. The dense YBCO films were grown on both the IBAD and YYC templates with no microcrack, while the YBCO films on the CYC templates were grown with the formation of microcracks and NiO. The YBCO film on the YYC template showed the higher $I_c$ than that on CYC template. Especially, the IBAD templates with a thin $CeO_2$(type I) and thick $CeO_2$(type II) top layer were used to compare the deposition nature of the YBCO on them. Comparing the current property of the YBCO films on IBAD templates, the YBCO film deposited on thick $CeO_2$ layer was better than the film on thin $CeO_2$ layer.

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The effect of thermal annealing and growth of $AgInS_2$/GaAs single crystal thin film by hot wal epitaxy (Hot wall Epitaxy(HWE)법에 의한 $AgInS_2$단결정 박막 성장과 열처리 효과)

  • Hong, Kwang-Joon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.11 no.6
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    • pp.274-284
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    • 2001
  • A stoichimetric mixture of evaporating materials for $AgInS_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films. $AgInS_2$mixed crystal was deposited on thorughly etched semi-insulating GaAs(100) substrate by the Hot wall Epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $AgInS_2$ single crystal the films measured from Hall effect by van der Pauw method are $9.35\times 10^{16}/\terxtm{cm}^3$ and $294\terxtm{cm}^2$/V.s at 293 K, respectively. From the optical absorption measurement the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin film was found to be $E_g$(T)= 2.1365eV-($9.89\times 10^{-3}eV/T^2$/(2930+T). After the as-grown $AgInS_2$ single crystal thin films was annealed in $Ag^-S^-$ and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal the films has been investigated by using the photoluminescence(PL) at 10K. The native defects of $V_{Ag},V_s, Ag_{int}$ and $S_{int}$ int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted $AgInS_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in $AgInS_2$ /GaAs did not form the native defects because In is $AgInS_2$ single crystal thin films did exist in the form of stable bonds.

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A HYBRID METHOD FOR HIGHER-ORDER NONLINEAR DIFFUSION EQUATIONS

  • KIM JUNSEOK;SUR JEANMAN
    • Communications of the Korean Mathematical Society
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    • v.20 no.1
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    • pp.179-193
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    • 2005
  • We present results of fully nonlinear time-dependent simulations of a thin liquid film flowing up an inclined plane. Equations of the type $h_t+f_y(h) = -{\in}^3{\nabla}{\cdot}(M(h){\nabla}{\triangle}h)$ arise in the context of thin liquid films driven by a thermal gradient with a counteracting gravitational force, where h = h(x, t) is the fluid film height. A hybrid scheme is constructed for the solution of two-dimensional higher-order nonlinear diffusion equations. Problems in the fluid dynamics of thin films are solved to demonstrate the accuracy and effectiveness of the hybrid scheme.