• Current Photovoltaic Research
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• v.1 no.1
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• pp.27-32
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• 2013

We investigated the growth mechanism of amorphous-phase Si thin films in order to improve the film characteristics and circumvent photo-degradation effects by implementation of hot-wire chemical vapor deposition. Amorphous silicon thin films grown in a silane/hydrogen mixture can be decomposed by a resistive heat filament. The structural properties were observed by Raman spectroscopy, FTIR, SEM, and TEM. The electrical properties of the films were measured by photo-conductivity, dark-conductivity, and photo-sensitivity. The contents of Si-H and $Si-H_n$ bonds were measured to be 19.79 and 9.96% respectively, at a hydrogen flow rate of 5.5 sccm, respectively. The thin film has photo-sensitivity of $2.2{\times}10^5$ without a crystalline volume fraction. The catalyst behavior of the hot-wire to decompose the chemical precursors by an electron tunneling effect depends strongly on the hydrogen mixture rate and an amorphous Si thin film is formed from atomic relaxation.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2006.06a
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• pp.108-111
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• 2006

Recently, mobile information devices, such as cellular phone, PDA(Personal Digital Assistant, PDA) are getting smaller and thinner. Accordingly, ultra precision welding technology is required to manufacture the high performance system for use in the telecommunication industry. In this study, we propose the laser micro welding process. Using ytterbium fiber laser, a wide range of experiments have been carried out for the gold wire-to-gold thin film welding.

• Journal of electromagnetic engineering and science
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• v.4 no.1
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• pp.43-49
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• 2004

A low-frequency coaxial reflectometer(LCR) with a thin-wire inner conductor is designed and constructed to measure nondestructively the absorbing performance of electromagnetic absorbers in the frequency range of 10 MHz to 200 MHz. The LCR consists of a square coaxial transmission line and a network analyzer with a time-domain measurement capability. Inherent characteristics of a square coaxial line with a thin-wire inner conductor which deteriorate the impedance matching of the input port of the LCR are addressed. And the characteristics are improved by employing a multiwire inner conductor. Measured and calculated reflection losses of a flat ferrite tile absorber are presented.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.8 no.1
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• pp.99-109
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• 1996

Experimental investigations are carried out for the characteristics of bubble rise in the Miniature Two-Phase closed Thermosyphon(MTPCT) with a thin wire insert. The working fluids applied as experimental media are of three kinds: water, methanol, and ethanol. The effects of combination of the inclination with diametric ratio $\alpha$(=d$_{0}$/D$_{I}$) on rising velocity of a large bubble in the thermosyphon are explicitly analyzed. The realm of a movable bubble and the critical value of $\alpha$ are iteratively pursued to interpret the region Figures-of-Break, rooted in the governing physics relations, according to the application of working fluid. Experimental results are compared with those of analysis and critical ranges for $\alpha$ and D$_{I}$ were ascertained from comparisons.isons.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.1
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• pp.18-23
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• 2012

We propose and implement a single-wire communication protocol for thermal management systems using thin film thermoelectric modules for 3D IC cooling. The proposed single-wire communication protocol connects the temperature sensors, located near hot spots, to measure the local temperature of the chip. A unique ID number identifying the location of each hot spot is assigned to each temperature sensor. The prototype chip was fabricated by a $0.13{\mu}m$ CMOS MPW process, and the operation of the chip is verified.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.871-873
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• 2009

We report on the growth of rubrene ($C_{42}H_{28}$) wire fabricated by thermal evaporation, followed by solvent-vapor annealing for the application of organic thin film transistor. Solvent-vapor annealing was carried out in precisely controlled vapor pressure at elevated temperature. Micro-sized, and elongated rubrene wire was obtained via solvent annealing process reproducibly. Optical image and XRD data shows highly crystalline quality of rubrene wire.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.18 no.11
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• pp.1669-1676
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• 1993

In this paper, a thin-straight monopole antenna attached to a conducting box is analyzed using a moment method with the pocklington integral expression for the exact Green's function. A modeling of a conducting box is based on a Wire-Grid method for an efficient calculation procedure. A system of linear equation is obtained using the piecewise sinusoidal basis function. And a Junction basis function is enforcing to represent the physical current on the edge of the conducting box. Especially, the junction basis functions are overlapped for the current continuity preserving on the vertexes. Numerical results are obtained for the current distribution on the unified antenna/conducting box system, input impedance and radiation pattern. The results are compared with the known data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.66-69
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon$({\mu}c-Si:H)$ films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_{4}$ concentration$[F(SiH_{4})/F(SiH_{4})+F(H_{2})]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c-Si:H$ films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c-Si:H$ films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_{2}H_{6}$ to $SiH_{4}$ gas. The solar cells with structure of Al/nip ${\mu}c-Si:H$/TCO/glass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.387-390
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}$c-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below 300$^{\circ}C$. The SiH$_4$ concentration[F(SiH$_4$)/F(SiH$_4$).+(H$_2$)] is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}$c-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}$c-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of B$_2$H$\_$6/ to SiH$_4$ gas. The solar cells with structure of Al/nip ${\mu}$c-Si:H/TCO/g1ass was fabricated with single chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Progress in Superconductivity and Cryogenics
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• v.14 no.1
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• pp.4-7
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• 2012

Coated conductors have been developed to increase piece length and critical current for electric power applications. Otherwise, Many efforts were carried out to reduce AC loss of coated conductor for AC applications. Twisting and cabling processes are effective to reduce AC loss but, these processes can not be applied for tape shaped coated conductor. It is inevitable to have thin rectangular shape because coated conductor is fabricated by thin film deposition process on metal substrate. In this study, round shape superconducting wire was first fabricated using coated conductors. First of all, Ag coated conductor was used. coated conductor was slitted to several wires with narrow width below 1mm. 12ea slitted wires were parallel stacked on top of another until making up the square cross-section. The bundle of coated conductors was heat treated to stick on each other by diffusion bonding and then copper plated to make round shape wire. Critical current of round wire was measured 185A at 77K, self field.