• 제목/요약/키워드: thick film resistors

검색결과 37건 처리시간 0.025초

경화 온도와 인쇄 공정 및 기판에 따른 폴리머 후막 저항체의 특성 변화에 대한 연구 (Study on variation of electrical properties of polymer thick film resistor regarding curing temperature, printing process and substrate)

  • 유명재;이상명;박성대;이우성;강남기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.311-312
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    • 2005
  • Applying a designed test coupon pattern for fabricating resistors various resistors were formed using PTF(polymer thick film) pastes. Aspect ratio from 0.25 to 4 were selected for fabricating resistors. Formed resistors were cured at $170^{\circ}C$ and $240^{\circ}C$. Electrical properties of fabricated resistors were measured and their values analyzed in relation to cure temperature and formed geometry via printing. Also effects of substrates used for fabricating resistors were observed.

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Characteristics of $\pi$-type attenuators using Ti(N) thin film resistors

  • Cuong, Nguyen Duy;Kim, Dong-Jin;Kang, Byoung-Don;Yoon, Soon-Gil
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.50-50
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    • 2007
  • We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

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후막저항의 기하학적 위치에 따른 압력센서의 출력특성 고찰 (A Study of Deflection of Ceramic Diaphragm for a Pressure Sensor)

  • 이성재;이득용;하영선
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.884-887
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    • 2003
  • Strain gages were widely used transducers. Essentially a strain gage was an electric element to which an appropriate type was attached. Strain was sensed by gages and provided electrical output proportional to applied forced. This paper describes the recent development of a thick film strain gage ceramic pressure sensors. The thick film resistors as strain gage in the Wheatstone bridge were fabricated with a novel mixture of ruthenium. The thick-film technology of resistors were printed on the ceramic diaphragm back side by screen printing and cured at $850^{\circ}C$. The mechanical measurements were performed with the computer simulation results(ANSYS 5.1). The output sensitivity was 1.2mV/V, of which max. nonlinearity was less than 0.29%, hysteresis was less than 0.38%FS.

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후막 및 박막 하이브리드 마이크로 회로 기술

  • 이준
    • 한국세라믹학회:학술대회논문집
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    • 한국세라믹학회 1986년도 Priceedings Of The Third Korea-Japan Seminar On New Ceramics
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    • pp.237-255
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    • 1986
  • The thick and thin film hybrid microcircuit technologies are reviewed. The materials, te processing conditions and the final properties of thick and thin film conductors, resistors dielectrics are discussed.

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감광성 폴리머 저항 페이스트 제조와 미세패턴 후막저항의 형성 (Fabrication of Photosensitive Polymer Resistor Paste and Formation of Finely-Patterned Thick Film Resistors)

  • 김동국;박성대;유명재;심성훈;경진범
    • 공업화학
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    • 제20권6호
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    • pp.622-627
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    • 2009
  • 알칼리 수용액에 현상이 가능한 감광성 수지재료와 전도성 카본블랙 필러를 이용하여 포토 패터닝이 가능한 폴리머 후막 저항 페이스트를 제조하고 평가하였다. 감광성 수지로는 인쇄회로기판의 보호층으로 주로 사용되는 photo solder resist(PSR)를 사용하여 자외선에 의한 노광 및 알칼리 수용액에의 현상이 가능하게 하였다. 감광성 폴리머 저항 페이스트를 제작한 후, PCB 테스트 보드를 이용하여 후막저항체의 전기적 특성을 평가하였다. 카본블랙의 첨가량에 따라 시트저항은 감소하였으나, 과량 첨가시에는 현상성에 한계를 나타내었다. 재경화에 따라서 시트저항이 감소하였으며, 카본블랙의 첨가량이 많을수록 그 변화율은 작게 나타났다. 포토공정을 적용하여, 미세 패터닝된 meander형 후막저항체를 제조할 수 있었고, 이 방법을 통하여 적은 면적에도 시트저항의 수십 배에 달하는 큰 저항값을 구현할 수 있었다.

폴리머 후막 저항체의 제작 및 경화 온도에 따른 저항 값 변화에 대한 연구 (Fabrication of polymer thick film resistor and study on resistance variation regarding curing temperature)

  • 유명재;이상명;박성대;강남기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.212-213
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    • 2006
  • Polymer thick film resistor paste was fabricated using various materials. Inorganic materials of carbon black and graphite were selected as fillers and epoxy resin was selected as organic material. Solvent with high boiling temperature was applied to adjust viscosity. A designed test coupon pattern was used to evaluate fabricated resistors. Aspect ratio of 1 was selected for evaluating resistor values. Electrical properties of fabricated resistors were measured and their values analyzed in relation to paste composition. PTF fabricated using carbon black as fillers achieved resistor value of $530{\Omega}/sq$.

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HIC용 $RuO_2$ 후막저항체에서 유리의 물리적 성질이 TCR에 미치는 영향 (Effects of Physical Properties of Glass on the TCR of $RuO_2$ Thick Film Resistors for Hybrid Integrated Circuits (HIC))

  • 이병수;이준
    • 한국세라믹학회지
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    • 제30권11호
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    • pp.974-978
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    • 1993
  • Glass viscosity effects on the electrical properties and microstructure of RuO2 based thick film resistors (TFR) using alumina modified lead borosilicate glasses were studied. AT 85$0^{\circ}C$, the glass viscosities were increased from 4.24Pa.s to 51.5Pa.s when the alumina was added from none to 14 weight percent to the standard glass of 63% PbO, 25% B2O3 and 12% SiO2. The resistivities of resistors were generally decreased and the microstructure development was retarded as the viscosity of the glass increased. This is contrary to the generally accepted thought that the low resistivity is due to fast microstructure development kinetics in TFR. Even though the glass viscosity retards the microstructure development kinetics, the overall network formations are favored for higher viscosity of glass, such that the sheet resistivities were decreased as the glass viscosity increased.

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Effect of Binder Glass Crystallization on Electrical Properties in $RuO_2$-Thick Film Resistor

  • Sungmin Kwon;Kim, Cheol-Young
    • The Korean Journal of Ceramics
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    • 제2권1호
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    • pp.33-38
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    • 1996
  • In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

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$RuO_2$ 후막저항을 이용한 압력센서의 출력특성 개선 (Sensing Mechanism Property of $RuO_2$ Thick Film Resistor.)

  • 이성재;박하용;민남기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.350-351
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    • 2006
  • Thick film mechanical sensors can be categorized into four main areas piezoresistive, piezoelectric, capacitive and mechanic tube. In this areas, the thick film strain gage is the earliest example of a primary sensing element based on the substrates. The latest thick film sensor is used various pastes that have been specifically developed for pressure sensor application. Some elastic materials exhibit a change in bulk resistivity when they are subjected to displacement by an applied pressure. This property is referred to as piezoresistivity and is a major factor influencing the sensitivity of a piezoresistive strain gage. The effect of thick film resistors was first noticed in the early 1970, as described by Holmes in his paper in 1973.

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동시 소성된 저항/저온 동시 소성 세라믹(LTCC) 이중층의 캠버에 영향을 미치는 인자 (Factors Influencing the Camber of Cofired Resistor/Low Temperature Cofired Ceramics (LTCC) Bi-Layers)

  • 홍옥연;민석홍
    • 한국재료학회지
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    • 제33권12호
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    • pp.537-549
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    • 2023
  • The sintering shrinkage behaviors of low temperature cofired ceramics (LTCC) and resistors were compared using commercial LTCC and thick-film resistor pastes, and factors influencing the camber of cofired resistor/LTCC bi-layers were also investigated. The onset of sintering shrinkage of the resistor occurred earlier than that of LTCC in all resistors, but the end of sintering shrinkage of the resistor occurred earlier or later than that of LTCC depending on the composition of the resistor. The sintering shrinkage end temperature and the sintering shrinkage temperature interval of the resistor increased as the RuO2/glass volume ratio of the resistor increased. The camber of cofired resistor/LTCC bi-layers was obtained using three different methods, all of which showed nearly identical trends. The camber of cofired resistor/LTCC bi-layers was not affected by either the difference in linear shrinkage strain after sintering between LTCC and resistors or the similarity of sintering shrinkage temperature ranges of LTCC and resistors. However, it was strongly affected by the RuO2/glass volume ratio of the resistor. The content of Ag and Pd had no effect on the sintering shrinkage end temperature or sintering shrinkage temperature interval of the resistor, or on the camber of cofired resistor/LTCC bi-layers.