Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of $\pi$-type attenuators using Ti(N) thin film resistors

  • Cuong, Nguyen Duy (Department of Materials Science arid Engineering, Chungnam National University) ;
  • Kim, Dong-Jin (KMC technology) ;
  • Kang, Byoung-Don (Department of Materials Science arid Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Science arid Engineering, Chungnam National University)
  • Published : 2007.06.21
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Abstract

We report the effect of the film thickness on electrical properties of Ti(N) film resistors. The applications of titanium nitride thin film resistor in $\Pi$-type attenuators are also characterized. As film thickness decreases from 100 to 30 nm, temperature coefficient of resistance significantly decreases from -60 to -148 ppm/K, while sheet resistance increases from 37 to $270\;{\Omega}/{\square}$. The characterizations of 20dB-attenuators using thin film resistors are improved in comparison with those using thick film resistors. The $\Pi$-type attenuators using Ti(N) thin film resistors exhibit a attenuation of -19.94 dB and voltage standing wave ratio of 1.16 at a frequency of 2.7 GHz.

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