• Proceedings of the KACD Conference
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• 2003.11a
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• pp.560-560
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• 2003

I. Objectives Intracanal medicament with antibacterial action is required to maximize the disinfection of the root canal system. The purpose of this study was to evaluate the efficacy of 2% chlorhexidine digluconate(CHX) and controlled release device(CRD) containing 20% CHX and chitosan coating, compared to calcium hydroxide as intracanal medicament against E. faecalis. II. Materials and Methods One hundred and twenty intact freshly extracted bovine incisors were used and were 0.5% NaOCl. Middle 1/3 portion of roots were sliced into 4mm thick section and cementum was removed using diamond burs and external diameter was approximally 6mm.(omitted)

• Journal of Industrial Technology
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• v.43 no.1
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• pp.43-48
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• 2023

Spinel LiNi_0.5Mn_1.5O₄ (LNMO) has been considered as one of most promising cathode material, because of its low-cost and competitive energy density. However, 4.7V vs. Li/Li⁺ of high operating potential facilitates electrolyte degradation on cathode-electrolyte interface during charge-discharge process. In particular, commercial polyvinylidene fluoride (PVDF) is not sutaible for LNMO cathode binder because its weak van der waals force induces thick and non-uniform coverage on the cathode surface. In this review, we study high performance binders for LNMO cathode, which forms uniform coating layer to prevent direct contact between electrolyte and LNMO particle as well as modifying high quality cathode electrolyte interphase, improved cell performace.

• Journal of the Korean Institute of Gas
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• v.24 no.4
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• pp.18-24
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• 2020

The purpose of this study is to validate thermal hinderance effects, i.e., feasibilities, of fire-proof structure for LPG tank exposed to fire from adjacent burning building. The panel materials suggested for the fire-proof structure are (1) 10 mm-thick wood, (2) wood with fireproof coating, (3) 75 mm-thick Expanded Polystyrene, (4) 75 mm-thick glass wool filled sandwich panel, and (5) 75 mm-thick autoclaved lightweight concrete. The square planar fire source of 1 ㎡, a matrix of nozzles releasing 120-140 g/s of LPG, is used to heat up the wall and the tank beyond, mimicking heat transfer from burning exterior wall finishes. The feasibility is tested by inspecting structural integrity after test, and then by examining temperatures at both sides of panels and tank's front surface as well as heat fluxes. As a result, it can be concluded that, among the suggested sample materials, fire-proof wall with ALC panel only showed the feasibility for explosion prevention with the proven evidences of structural integrity and least increase in temperature of tank.

• Journal of the Microelectronics and Packaging Society
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• v.7 no.4
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• pp.23-29
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• 2000

We demonstrate the fabrication method of high-density and high-quality solder bump solving a copper (Cu) cross-contamination in Si-LSI laboratory. The Cu cross-contamination is solved by separating solder-bump process by two steps. Former is via-formation process excluding Cu/Ti under ball metallurgy (UBM) layer sputtering in Si-LSI laboratory. Latter is electroplating process including Ti-adhesion and Cu-seed layers sputtering out of Si-LSI laboratory. Thick photoresist (PR) is achieved by a multiple coating method. After TiW/Al-electrode sputtering for electroplating and via formation in Si-LSI laboratory, Cu/Ti UBM layer is sputtered on sample. The Cu-seed layer on the PR is etched during Cu-electroplating with low-electroplating rate due to a difference in resistance of UBM layer between via bottom and PR. Therefore Cu-buffer layer can be electroplated selectively at the via bottom. After etching the Ti-adhesion layer on the PR, Sn/Pb solder layer with a composition of 60/40 is electroplated using a tin-lead electroplating bath with a metal stoichiometry of 60/40 (weight percent ratio). Scanning electron microscope image shows that the fabricated solder bump is high-uniformity and high-quality as well as symmetric mushroom shape. The solder bumps with even 40/60 $\mu\textrm{m}$ in diameter/pitch do not touch during electroplating and reflow procedures. The solder-bump process of high-uniformity and high-density with the Cu cross-contamination free in Si-LSI laboratory will be effective for electronic microwave application.

• Journal of the Korean institute of surface engineering
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• v.46 no.2
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• pp.68-74
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• 2013

For the coating of diamond films on WC-Co tools, a buffer interlayer is needed because Co catalyzes diamond into graphite. W and Ti were chosen as candidate interlayer materials to prevent the diffusion of Co during diamond deposition. W or Ti interlayer of $1{\mu}m$ thickness was deposited on WC-Co substrate under Ar in a DC magnetron sputter. After seeding treatment of the interlayer-deposited specimens in an ultrasonic bath containing nanometer diamond powders, $2{\mu}m$ thick nanocrystalline diamond (NCD) films were deposited at $600^{\circ}C$ over the metal layers in a 2.45 GHz microwave plasma CVD system. The cross-sectional morphology of films was observed by FESEM. X-ray diffraction and visual Raman spectroscopy were used to confirm the NCD crystal structure. Micro hardness was measured by nano-indenter. The coefficient of friction (COF) was measured by tribology test using ball on disk method. After tribology test, wear tracks were examined by optical microscope and alpha step profiler. Rockwell C indentation test was performed to characterize the adhesion between films and substrate. Ti and W were found good interlayer materials to act as Co diffusion barriers and diamond nucleation layers. The COFs on NCD films with W or Ti interlayer were measured as less than 0.1 whereas that on bare WC-Co was 0.6~1.0. However, W interlayer exhibited better results than Ti in terms of the adhesion to WC-Co substrate and to NCD film. This result is believed to be due to smaller difference in the coefficients of thermal expansion of the related films in the case of W interlayer than Ti one. By varying the thickness of W interlayer as 1, 2, and $4{\mu}m$ with a fixed $2{\mu}m$ thick NCD film, no difference in COF and wear behavior but a significant change in adhesion was observed. It was shown that the thicker the interlayer, the stronger the adhesion. It is suggested that thicker W interlayer is more effective in relieving the residual stress of NCD film during cooling after deposition and results in stronger adhesion.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.41.1-41.1
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• 2009

Aerosol Deposition (AD) is anovel way to fabricate bioactive ceramic coatings in biomedical implants and prostheses applications. In the present work, silicon-substituted hydroxyapatite (HA) coatings on commercially pure titanium were prepared by aerosol deposition using Si-HA powders. The incorporation of silicon in the HA lattice is known to improve the bioactivity of the HA, makingsilicon-substitute HA an attractive alternative to pure HA in biomedical applications. Si-HA powders with the chemical formula $Ca_{10}(PO_4)_6-x(SiO_4)x(OH)_2-x$, having silicon contents up to x=0.5 (1.4 wt%), were synthesized by solid-state reaction of $Ca_2P_2O_7$, $CaCO_3$, and $SiO_2$. The Si-HA powders were characterized by X-ray diffraction (XRD), X-ray fluorescence spectrometry (XRF), and Fourier transform infrared spectroscopy(FT-IR). The corresponding coatings were also analyzed by XRD, scanning electron microscopy (SEM), and electron probe microanalyzer (EPMA). The results revealed that a single-phase Si-HA was obtained without any secondary phases such as $\alpha$- or $\beta$-tricalcium phosphate (TCP) for both the powders and the coatings.The Si-HA coating was about $5\;{\mu}m$ thick, had a densemicrostructure with no cracks or pores. In addition, the proliferation and alkaline phosphatase (ALP) activity of MC3T3-E1 preosteoblast cells grown on the Si-HA coatings were significantly higher than those on the bare Ti and pure HA coating. These results revealed the stimulatory effects induced by siliconsubstitution on the cellular response to the HA coating.

• Maxillofacial Plastic and Reconstructive Surgery
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• v.30 no.1
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• pp.52-59
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• 2008

The geometric design of an implant surface may play an important role in affecting early osseointegration. It is well known that the porous surfaced implant had much benefits for the osseointegration and the early stability of implant. However, the porous surfaced implant had weakness from the transgingival contamitants, and it resulted in alveolar bone loss. The other problem identified with porous surface implant is the loss of physical properties resulting from the bead sintering process. In this study, we developed the new bead coating implant to overcome the disadvantages of porous surfaced implant. Ti-6Al-4V beads were supplied from STARMET (USA). The beads were prepared by a plasma rotating electrode process (PREP) and had a nearly spherical shape with a diameter of 75-150 ${\mu}m$. Two types of titanium implants were supplied by KJ Meditech (Korea). One is an external hexa system (External type) and the other is an internal system with threads (Internal type). The implants were pasted with beads using polyvinylalcohol solution as a binder, and then sintered at 1250 $^{\circ}C$ for 2 hours in vacuum of $10^{-5}$ torr. The resulting porous structure was 400-500 ${\mu}m$ thick and consisted of three to four bead layers bonded to each other and the implant. The pore size was in the range of 50-150 ${\mu}m$ and the porosity was 30-40 % in volume. The aim of this study was to evaluate the osseointegration of the newly developed dental implant. The experimental implants (n=16) were inserted in the unilateral femur of 4 mongrel dogs. All animals were killed at 8 weeks after implantation, and samples were harvested for hitological examination. All bead coated porous implants were successfully osseointegrated with peripheral bone. The average bone-implant contact ratios were 84.6 % (External type) and 81.5 % (Internal type). In the modified Goldner's trichrome staining, new generated mature bones were observed at the implant interface at 8 weeks after implantation. Although, further studies are required, we could conclude that the newly developed vacuum sintered Ti-6Al-4V bead coating implant was strong enough to resist the implant insertion force, and it was easily osseointegrated with peripheral bone.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.396-396
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• 2013

The resistive random access memory (ReRAM) has several advantages to apply next generation non-volatile memory device, because of fast switching time, long retentions, and large memory windows. The high mobility of monolayered graphene showed several possibilities for scale down and electrical property enhancement of memory device. In this study, the monolayered graphene grown by chemical vapor deposition was transferred to $SiO_2$ (100 nm)/Si substrate and glass by using PMMA coating method. For formation of metal-oxide nanoparticles, we used a chemical reaction between metal films and polyamic acid layer. The 50-nm thick BPDA-PDA polyamic acid layer was coated on the graphene layer. Through soft baking at $125^{\circ}C$ or 30 min, solvent in polyimide layer was removed. Then, 5-nm-thick indium layer was deposited by using thermal evaporator at room temperature. And then, the second polyimide layer was coated on the indium thin film. After remove solvent and open bottom graphene layer, the samples were annealed at $400^{\circ}C$ or 1 hr by using furnace in $N_2$ ambient. The average diameter and density of nanoparticle were depending on annealing temperature and times. During annealing process, the metal and oxygen ions combined to create $In_2O_3$ nanoparticle in the polyimide layer. The electrical properties of $In_2O_3$ nanoparticle ReRAM such as current-voltage curve, operation speed and retention discussed for applictions of transparent and flexible hybrid ReRAM device.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.109-116
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• 2016

To achieve the fabrication of high-quality Ag-coated Cu particles through a wet chemical process, we reported herein pretreatment conditions using an ammonium-based mixed solvent for the removal of a $Cu_2O$ layer on Cu particles that were oxidized in air for 1 hr at $200^{\circ}C$ or for 3 days at room temperature. Furthermore, we discussed the results of post-Ag plating with respect to removal level of the oxide layer. X-ray diffraction results revealed that the removal rate of the oxide layer is directly proportional to the concentration of the pretreatment solvent. With the results of Auger electron spectroscopy using oxidized Cu plates, the concentrations required to completely remove 50-nm-thick and 2-nm-thick oxides within 5 min were determined to be X2.5 and X0.13. However, the optimal concentrations in an actual Ag plating process using Cu powder increased to X0.4 and X0.5, respectively, because the oxidation in powder may be accelerated and the complete removal of oxide should be tuned to the thickest oxide layer among all the particles. Back-scattered electron images showed the formation of pure fine Ag particles instead of a uniform and smooth Ag coating in the Ag plating performed after incomplete removal of the oxide layer, indicating that the remaining oxide layer obstructs heterogeneous nucleation and plating by reduced Ag atoms.

• Journal of Information Display
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• v.4 no.2
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• pp.1-6
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• 2003

In this paper, we demonstrate that the organic electrophosphorescent device is driven by the organic thin film transistor with spin-coated photoacryl gate insulator. It was found that electrical output characteristics in our organic thin film transistors using the staggered-inverted top-contact structure showed the non-saturated slope in the saturation region and the sub-threshold nonlinearity in the triode region, where we obtained the maximum power luminance that was about 90 $cd/m^2$. Field effect mobility, threshold voltage, and on-off current ratio in 0.45 ${\mu}m$ thick gate dielectric layer were 0.17 $cm^2/Vs$, -7 V, and $10^6$ , respectively. In order to form polyimide as a gate insulator, vapor deposition polymerization process was also introduced instead of spin-coating process, where polyimide film was co-deposited by high-vacuum thermal evaporation from 4,4'-oxydiphthalic anhydride (ODPA) and 4,4'-oxydianiline (ODA) and cured at 150${\sqsubset}$for 1hr. It was also found that field effect mobility, threshold voltage, on-off current ratio, and sub-threshold slope with 0.45 ${\mu}m$ thick gate dielectric films were 0.134 $cm^2/Vs$, -7 V, and $10^6$ A/A, and 1 V/decade, respectively.