• Journal of the Korean Magnetics Society
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• v.18 no.1
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• pp.32-35
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• 2008

Thermally stable diffusion barrier of tungsten carbon nitride(W-C-N) and of tungsten boron carbon nitride(W-B-C-N) thin films have studied to investigate the impurity behaviors of boron and nitrogen. In this paper we newly deposited tungsten boron carbon nitride(W-B-C-N) thin film for various $W_2B$ target power on silicon substrate. The impurities of the 100nm-thick W-C-N and W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between W-C-N or W-B-C-N thin films and silicon during the high temperature($700^{\circ}C{\sim}1000^{\circ}C$) annealing process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.1
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• pp.24-28
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• 2012

In this study, we fabricated an amorphous InGaZnO pseudo-MOS transistor (a-IGZO ${\Psi}$-MOSFET) with a stacked $Si_3N_4/SiO_2$ (NO) gate dielectric and evaluated reliability of the devices with various thicknesses of a $SiO_2$ buffer layer. The roles of a $SiO_2$ buffer layer are improving the interface states and preventing degradation caused by the injection of photo-created holes because of a small valance band offset of amorphous IGZO and $Si_3N_4$. Meanwhile, excellent electrical properties were obtained for a device with 10-nm-thick $SiO_2$ buffer layer of a NO stacked dielectric. The threshold voltage shift of a device, however, was drastically increased because of its thin $SiO_2$ buffer layer which highlighted bias and light-induced hole trapping into the $Si_3N_4$ layer. As a results, the pseudo-MOS transistor with a 20-nm-thick $SiO_2$ buffer layer exhibited improved electrical characteristics and device reliability; field effective mobility(${\mu}_{FE}$) of 12.3 $cm^2/V{\cdot}s$, subthreshold slope (SS) of 148 mV/dec, trap density ($N_t$) of $4.52{\times}1011\;cm^{-2}$, negative bias illumination stress (NBIS) ${\Delta}V_{th}$ of 1.23 V, and negative bias temperature illumination stress (NBTIS) ${\Delta}V_{th}$ of 2.06 V.

• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• Corrosion Science and Technology
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• v.13 no.1
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• pp.1-5
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• 2014

A low carbon steel, Fe-2.25%Cr steel (ASTM T22), and Fe-2.25%Cr-1.6%W steel (ASTM T23) were aluminized by hot dipping into molten Al baths. After hot-dipping, a thin Al-rich topcoat and a thick alloy layer formed on the surface. The topcoat consisted primarily of a thin Al layer that contained a small amount of Fe, whereas the alloy layer consisted of Al-Fe intermetallics such as $Al_5Fe_2$ and AlFe. Cr, Mo, and W in T22 and T23 steels reduced the thickness of the topcoat and the alloy layer, and flattened the reaction front of the aluminized layer, when compared to the low carbon steel.

• Journal of Ocean Engineering and Technology
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• v.33 no.2
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• pp.153-160
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• 2019

Welding often results in welding distortion during the assembly process. The welding distortion of thin-plate structures such as the living quarters of ships and offshore installations is a more significant problem than in the case of thick-plate structures. Pre-stressing/heating and fairing, which are additional works to mitigate and control welding distortion, are inevitable, and the construction planning is accordingly delayed. In order to prevent welding distortion and minimize the additional work during the assembly process, increasing the plate thickness and/or the number of stiffeners may be a simple solution, but it may give rise to problems related to cost and weight. In this study, the welding distortion control effect of the type of stiffeners on the door openings of various living quarter structures was investigated using an experimental method and a finite element method. The results showed the feasibility of mitigating and controlling the welding distortion, and the optimum selection of the type of stiffeners was confirmed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.756-759
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• 2007

We have fabricated pentacene OTFT on ultra-thin flexible polyimide film with a rigid glass support. Polyimide film of the thickness of $10{\mu}m$ has formed on glass by spin coating from the solution. After the entire OTFT process, the OTFT exhibited a fieldeffect mobility of $0.4\;cm^2/Vs$, an $I_{on}/I_{off}$ ratio of $10^7$ and a subthreshold swing of 0.7 V/dec. The OTFT on polyimide film has been detached from the glass support and laminated on a plastic support of $130\;{\mu}m-thick$ PET film. After the detach process, in spite of the degrading of its field-effect mobility, the OTFT showed high $I_{on}/I_{off}$ as high $as{\sim}10^6$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.290-291
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• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.231-237
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• 1999

$SrBi_{22.4}Ta_2O_9$ (SBT) thin films of 70~150 nm thickness were prepared on platinized silicon substrates by Liquid Source Misted Chemical Deposition (LSMCD) process, and their microstructure, feroelectric and leakage current characteristics were investigated. By annealing at $800^{\circ}C$ for 1 hour in oxygen ambient, SBT films were fully crystallized to the Bi layered perovskite structure without preferred orientation. The grain size of the LSMCD- derived SBT films was about 100nm, and was not varied with the film thickness. $2P_r$ and $E_c$ of the SBT films increased with decreasing the film thickness, and the 70nm-thick SBT film exhibited $2P_r$ of 17.8 $\mu$C/$\textrm{cm}^2$ and $E_c$ of 74kV/cm at applied voltage of 5V. Within the film thickness range of 70~150nm, the relative dielectric permittivity of the LSMCD-derived SBT film decreased with decreasing the film thickness. Leakage current densities lower than $10^{-7}\textrm{A/cm}^2$ at 5V were observed in the SBT films thicker than 125nm.

• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.430-439
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• 2000

$In_2O_3$-based thin film sensor with 500-600 nm thick was fabricated for the detection of CO gas by rf magnetron sputtering. In order to improve both sensitivity to CO gas and selectivity to hydrogen gas containing -CH, ultra-thin transition metal Co catalyst was sputtered over $In_2O_3$ thin film and annealed at $500^{\circ}C$. Sensitivity to CO was maximum at the thickness of Co 2.1 nm and $300^{\circ}C$, and that to $C_3H_8$ was at the thickness of Co 1.4 nm and $350-400^{\circ}C$. From the x-ray photoelectron spectroscopy (XPS) result, ultra-thin Co was existed into CoO covered with $Co_2O_3$ on $In_2O_3$ particles, and thus p-n junction of $In_2O_3(n-type)$-CoO(p-type) was thought to be formed. In this p-n junction type sensors, sensing mechanism with reducing gases can be explained by the variation of depletion layer thickness formed in the interface.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.464-469
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• 2002

$SrBi_2Nb_2O_9(SBN)$ thin films were grown on Pt/Ti/Si and p-type Si(100) substrates by rf-magnetron co-sputtering method using two ceramic targets, $SrNb_2O_6\; and \;Bi_2O_3$. The structural and electrical characteristics have been investigated to confirm the possibility of the SBN thin films for the applications to destructive and nondestructive read out ferroelectric random access memory(FRAM). For the optimum growth condition X-ray diffraction patterns showed that SBN films had well crystallized Bi-layered perovskite structure after $700^{\circ}C$ heat-treatment in furnace. From this specimen we got remnant polarization $(2P_r)$ of about 6 uC/$\textrm{cm}^2$ and coercive voltage $(V_c)$ of about 1.5 V at an applied voltage of 5 V. The leakage current density was $7.6{\times}10^{-7}$/A/$\textrm{cm}^2$ at an applied voltage of 5V. And for the NDRO-FRAM application, properties of SBN films on Si substrate has been investigated. From transmission electron microscopy (TEM) analysis, we found the furnace treated sample had a native oxide about 2 times thicker than the RTA treated sample and this thick native oxide layer had a bad effect on C-V characteristics of SBN/Si thin film. After $650^{\circ}C$ RTA process, we got the improved memory window of 1.3 V at an applied voltage of 5 V.