• Korean Journal of Materials Research
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• v.9 no.6
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• pp.599-603
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• 1999

We have investigated the growth characteristics of thick GaN on Sim substrate with AlN and low temperature GaN buffer layer. The vertical hydride vapor phase epitaxy system with $GaCl_3$ precursor was used for growth of GaN. AlN and GaN buffer layer were deposited on Si substrate to reduce the lattice mismatch and the thermal expansion coefficient mismatch between si and GaN. Optimization of deposition condition for AlN and low temperature GaN buffer layers were carried out. We studied the effects of growth temperature, V/III ratio on the properties of thick GaN. Surface morphology, growth rate and crystallinity of thick GaN were measured using Atomic Force Microscopy (AFM), $\alpha-step$-, Scanning Electron Microscopy (SEM) and X-Ray Diffractometer(XRD).

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.50-53
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• 2009

Multi-walled carbon nanotubes (MWNTs) were synthesized on different substrates (bare Si and $SiO_2$/Si substrate) to investigate dye-sensitized solar cell (DSSC) applications as counter electrode materials. The synthesis of MWNTs samples used identical conditions of a Fe catalyst created by thermal chemical vapor deposition at $900^{\circ}C$. It was found that the diameter of the MWNTs on the Si substrate sample is approximately $5{\sim}10nm$ larger than that of a $SiO_2$/Si substrate sample. Moreover, MWNTs on a Si substrate sample were well-crystallized in terms of their Raman spectrum. In addition, the MWNTs on Si substrate sample show an enhanced redox reaction, as observed through a smaller interface resistance and faster reaction rates in the EIS spectrum. The results show that DSSCs with a MWNT counter electrode on a bare Si substrate sample demonstrate energy conversion efficiency in excess of 1.4 %.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• Bulletin of the Korean Chemical Society
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• v.17 no.7
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• pp.637-642
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• 1996

Preparation and properties of potential CVD (Chemical Vapor Deposition) precursors for the TiO2, a major component of the perovskite materials such as PT, PLT, PZT, and PLZT were investigated. Reactions between β-diketones and TiMe3, formed in situ failed to produce stable Ti(β-diketonate)3 complexes but a stable purple solid, characterized as (OTi(BPP)2)2 (BPP=1,3-biphenyl-1,3-propanedione) was obtained when BPP was used. Several new Ti(Oi-Pr)2(β-diketonate)2 complexes with aromatic or ring substituents were synthesized by the substitution reaction of Ti(OiPr)4by β-diketones and characterized with 1H NMR, IR, ICP, and TGA. Solid complexes such as Ti(Oi-Pr)2(BAC)2 (BAC=1.-phenyl-2,4-pentanedione), Ti(Oi-Pr)2(BPP)2, Ti(Oi-Pr)2(1-HAN)2 (1-HAN=2-hydroxy-1-acetonaphthone), Ti(Oi-Pr)2(2-HAN)2 (2-HAN=1-hydroxy-2-acetonaphthone), Ti(Oi-Pr)2(ACCP)2 (ACCP=2-acetylcyclopentanone), and Ti(Oi-Pr)2(HBP)2 (HBP=2-hydroxybenzophenone) were found to be stable toward moisture and air. Ti(Oi-Pr)2(ACCP)2 and Ti(Oi-Pr)2(HBP)2 were proved to have lower melting points and higher decomposition temperatures. However, these complexes are thermally stable and pyrolysis under an inert atmosphere resulted in incomplete decomposition. Ti(Oi-Pr)2(DPM)2 (DPM=dipivaloylmethane) and Ti(Oi-Pr)2(HFAA)2 (HFAA=hexafluoroacetylacetone) were sublimed substantially during the thermal decomposition. Pyrolysis mechanism of these complexes are dependent on type of β-diketone but removal of Oi-Pr ligands occurs before the decomposition of β-diketonate ligands.

• Tribology and Lubricants
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• v.38 no.6
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• pp.235-240
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• 2022

Atomically-thin 2D nanomaterials can be easily deformed and have surface corrugations which can influence the frictional characteristics of the 2D nanomaterials. Chemical vapor deposition (CVD) graphene can be grown in a wafer scale, which is suitable as a large-area surface coating film. The CVD growth involves cooling process to room temperature, and the thermal expansion coefficients mismatch between graphene and the metallic substrate induces a compressive strain in graphene, resulting in the surface corrugations such as wrinkles and atomic ripples. Such corrugations can induce the friction anisotropy of graphene, and therefore, accurate imaging of the surface corrugation is significant for better understanding about the friction anisotropy of CVD graphene. In this work, the combinatorial analysis using friction force microscopy (FFM) and transverse shear microscopy (TSM) was implemented to unveil the friction anisotropy of CVD bi-layer graphene. The periodic friction anisotropy of the wrinkles was measured following a sinusoidal curve depending on the angles between the wrinkles and the scanning tip, and the two domains were observed to have the different friction signals due to the different directions of the atomic ripples, which was confirmed by the high-resolution FFM and TSM imaging. In addition, we revealed that the atomic ripples can be easily suppressed by ironing the surface during AFM scans with an appropriate normal force. This work demonstrates that the friction anisotropy of CVD bilayer graphene is well-correlated with the corrugated structures and the local friction anisotropy induced by the atomic ripples can be controllably removed by simple AFM scans.

• Journal of the Korean institute of surface engineering
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• v.57 no.1
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• pp.22-30
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• 2024

This study reports a direct growth of carbon nanotubes (CNTs) on the surface of LiCoO₂ (LCO) powders to apply as highly efficient cathode materials in lithium-ion batteries (LIB). The CNT synthesis was performed using a thermal chemical vapor deposition apparatus with temperatures from 575 to 625 ℃. Ferritin molecules as growth catalyst of CNTs were mixed in deionized (DI) water with various concentrations from 0.05 to 1.0 mg/mL. Then, the LCO powders was dissolved in the ferritin solution at a ratio of 1g/mL. To obtain catalytic iron nanoparticles on the LCO surface, the LCO-ferritin suspension was dropped in silicon dioxide substrates and calcined under air at 550℃. Subsequently, the direct growth of CNTs on LCO powders was performed using a mixture of acetylene (10 sccm) and hydrogen (100 sccm) for 10 min. The growth behavior was characterized by scanning and transmission electron microscopy, Raman scattering spectroscopy, X-ray diffraction, and thermogravimetric analysis. The optimized condition yielding high structural quality and amount of CNTs was 600 ℃ and 0.5 mg/mL. The obtained materials will be developed as cathode materials in LIB.

• Korean Journal of Materials Research
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• v.5 no.7
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• pp.775-780
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• 1995

Thin films of titanium nitride are formed using the tetrakis-dimethyl-amino-titanium (TDMAT(Ti[N($CH_3$)$_2$]$_4$)) under various conditions. The formation of TiN films has been obtained from the thermal decomposition of the Ti-precursor and the gas phase reaction between TDMAT and ammonia(NH$_3$). The resistivity of the MOCVD film can be attributed to their impurity. Especially the curve fitting graph of XPS data is revealed that main impurities in the films as carbon and oxygen make various interstitial compounds which has influenced physical and electrical properties of the film. In the contact hole with the aspect ratio of 3:1 and the diameter of 0.5${\mu}{\textrm}{m}$, the SEM morphology shows that the step coverage is more decreased in the films formed y flowing ammonia additionally than the films formed by pyrolysis of TDMAT and the phenomenon is probably related with the activation energy.

• Applied Chemistry for Engineering
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• v.10 no.7
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• pp.985-989
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• 1999

Silica($SiO_2$) thin film was synthesized by a low pressure metal organic chemical vapor deposition(LPMOCVD) using organic silane compound. Triethyl orthosilicate was used as a source material. Operation pressure was 1~100 torr at outlet of the reactor and deposition temperature was $600{\sim}900^{\circ}C$. The experimental results showed that the high reaction temperature and high source gas concentration led to higher growth rate of $SiO_2$. The step coverage of films on micro-scale trenches was fairly good, which resulted from the phenomena that the condensed oligomers flow into the trenches. We estimated a reaction path that the source gas polymerizes and produces oligomers (dimer, trimer, tetramer, etc.), which diffuse and condense on the solid surface. The chemical species in the gas phase at the outlet of reactor tube were analyzed by quadrapole mass spectrometer. The peaks, assigned to be monomer, dimer of source gas and geavier molecules, were observed at 650 or $700^{\circ}C$. At higher temperature($900^{\circ}C$), the peaks of the heavy molecules disappeared, because almost all the source gas and intermediate(polymerized oligomer) molecules were oxidized or condensed on colder tube wall.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.456-456
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• 2009

Boron doping on an n-type Si wafer is requisite process for IBC (Interdigitated Back Contact) solar cells. Fiber laser annealing is one of boron doping methods. For the boron doping, uniformly coated or deposited film is highly required. Plasma enhanced chemical vapor deposition (PECVD) method provides a uniform dopant film or layer which can facilitate doping. Because amorphous silicon layer absorption range for the wavelength of fiber laser does not match well for the direct annealing. In this study, to enhance thermal affection on the existing p-a-Si:H layer, a ${\mu}c$-Si:H intrinsic layer was deposited on the p-a-Si:H layer additionally by PECVD. To improve heat transfer rate to the amorphous silicon layer, and as heating both sides and protecting boron eliminating from the amorphous silicon layer. For p-a-Si:H layer with the ratio of $SiH_4$ : $B_2H_6$ : $H_2$ = 30 : 30 : 120, at $200^{\circ}C$, 50 W, 0.2 Torr for 30 minutes, and for ${\mu}c$-Si:H intrinsic layer, $SiH_4$ : $H_2$ = 10 : 300, at $200^{\circ}C$, 30 W, 0.5 Torr for 60 minutes, 2 cm $\times$ 2 cm size wafers were used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the laser condition set of 20 ~ 27 % of power, 150 ~ 160 kHz, 20 ~ 50 mm/s of marking speed, and $10\;{\sim}\;50 {\mu}m$ spacing with continuous wave mode of scanner lens showed the correlation between lifetime and sheet resistance as $100\;{\Omega}/sq$ and $11.8\;{\mu}s$ vs. $17\;{\Omega}/sq$ and $8.2\;{\mu}s$. Comparing to the singly deposited p-a-Si:H layer case, the additional ${\mu}c$-Si:H layer for doping resulted in no trade-offs, but showed slight improvement of both lifetime and sheet resistance, however sheet resistance might be confined by the additional intrinsic layer. This might come from the ineffective crystallization of amorphous silicon layer. For the additional layer case, lifetime and sheet resistance were measured as $84.8\;{\Omega}/sq$ and $11.09\;{\mu}s$ vs. $79.8\;{\Omega}/sq$ and $11.93\;{\mu}s$. The co-existence of $n^+$layeronthesamesurfaceandeliminating the laser damage should be taken into account for an IBC solar cell structure. Heavily doped uniform boron layer by fiber laser brings not only basic and essential conditions for the beginning step of IBC solar cell fabrication processes, but also the controllable doping concentration and depth that can be established according to the deposition conditions of layers.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.7
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• pp.665-676
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• 2011

In this study, the nucleate pool boiling heat transfer coefficients (HTCs) and critical heat flux (CHF) for a smooth and square flat heater in a pool of pure water with and without carbon nanotubes (CNTs) dispersed at $60^{\circ}C$ were measured. Tested aqueous nanofluids were prepared using CNTs with volume concentrations of 0.0001%, 0.001%, and 0.01%. The CNTs were dispersed by chemically treating them with an acid in the absence of any polymers. The results showed that the pool boiling HTCs of the nanofluids are higher than those of pure water in the entire nucleate boiling regime. The acid-treated CNTs led to the deposition of a small amount of CNTs on the surface, and the CNTs themselves acted as heat-transfer-enhancing particles, owing to their very high thermal conductivity. There was a significant increase in the CHF- up to 150%-when compared to that of pure water containing CNTs with a volume concentration of 0.001%. This is attributed to the change in surface characteristics due to the deposition of a very thin layer of CNTs on the surface. This layer delays nucleate boiling and causes a reduction in the size of the large vapor canopy around the CHF. This results in a significant increase in the CHF.