• Proceedings of the Korean Society of Precision Engineering Conference
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• 2002.05a
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• pp.840-843
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• 2002

The dry pulverizing/Mixing device is used to deal with the spent fuels for the safe disposal. The separated pellets from hulls by a slitting device are put and oxidized from UO$_2$ solid pellet to U$_3$O$\_$8/ powder in the device. The device have been developed based on a voloxidation method which is one of several dry de-cladding methods. We have benchmarked dry de-cladding methods, analyzed applicability to the advanced spent fuel management process, integrated and compared several configuration, and finally derived detailed specifications proper to requirements for the device. Also, thermal characteristics of the device such as thermal stress and strain have been analyzed by the commercial software, 1-DEAS, and the reliability of the results have been verified by the KOLAS(Korea Laboratory Accreditation Scheme). The UO$_2$ solid pellets are put in the device which has a capacity of 20 kgHM per a batch, heated up about 600$^{\circ}C$ in the air environment. Then, the UO$_2$ solid pellets are oxidized into the U$_3$O$\_$8/ powder, and the powder is collected in a special vessel. The device has been designed and developed as fellows: the multi-staged fine hole meshes are used to reduce the size of the powder gradually, heat and air(oxygen) are supplied continuously to reduce the reaction time, and slight vibration effect are applied to collect powder cling to the device.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.303-306
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• 2003

To reduce the storage space of spent fuels used at the atomic power plants all over the world, the uranium elements contained in the spent fuels is being extracted and effectively stored. For this, the spent fuel are oxidized and deoxidized. In this study, it is produced conceptual design specification about the spent fuel management technology research and test facilities have been produced. The first considered processes in the facilities is the metal conversion furnace in the dry environment. Since this process is operates at the high temperature range, we have to consider heat-resisting designs for the device. For the heat-resisting designs, we have surveyed and analyzed technical references for material properties. Also, we have determined the temperature distribution condition of the device based on experimental results. We have calculated thermal stress and strain of each devices by the commercial analysis software, I-DEAS. By using the results, we have analyzed design configurations of the point at issue by thermal effects, and suggested alternative design configurations. It is experimented for inspecting confidence rate of heat strain. Based on these results, necessary design specifications for heat-resisting design have been produced.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.93-98
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• 2013

Nanoimprint lithography (NIL) is a next generation technology for fabrication of micrometer and nanometer scale patterns. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. To successfully imprint a nanosized pattern with the thermal NIL, the process conditions such as temperature and pressure should be appropriately selected. This starts with a clear understanding of polymer material behavior during the thermal NIL process. In this paper, a filling process of the polymer resist into nanometer scale cavities during the thermal NIL at the temperature range, where the polymer resist shows the viscoelastic behaviors with consideration of stress relaxation effect of the polymer. In the simulation, the filling process and the residual layer formation are numerically investigated. And the effects of pressure and temperature on NIL process, specially the residual layer formation are discussed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.204-209
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• 2017

We have investigated a Mo/Au gate scheme for use in AlGaN/GaN-on-Si HFETs. AlGaN/GaN-on-Si HFETs were fabricated with Ni/Au or Mo/Au gates and their electrical characteristics were compared after thermal stress tests. While insignificant difference was observed in DC characteristics, the Mo/Au gate device exhibited lower on-resistance with superior pulsed characteristics in comparison with the Ni/Au gate device.

• Proceedings of the IEEK Conference
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• 2002.06a
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• pp.439-442
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• 2002

We present in this Paper a microwave Power sensor fabricated by a standard CMOS process and a bulk micromachining process. The sensor consists of a CPW transmission line, a resistor as a healer, and thermocouple arrays. An input microwave heater, the resistor so that the temperature rises proportionally to the microwave power and tile thermocouple arrays convert it to an electrical signal. The sensor uses air bridged 8round of CPW realized by wire bonding to reduce tile device size and cost and to improve the thermal impedance. Al/poly-Si junctions are used for the thermocouples. Poly-Si is used for tile resister and Aluminium is for transmission line. The resistor and hot junctions of the thermocouples are placed on a low stress silicon nitride diaphragm to minimize a thermal loss. The fabricated device operates properly from 1㎼ to 100㎽\ulcorner of input power. The sensitivity was measured to be ,3.2～4.7 V/W.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.10
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• pp.2509-2515
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• 2014

In this paper, the conventional vertical structure for VLSI circuits CMOS intend to improve the stress effects of active region and built-in threshold voltage. For these improvement, the proposed structure is shallow trench isolation of moat shape. We want to analysis the electron concentration distribution, gate bias vs energy band, thermal stress and dielectric enhanced field of thermal damage between vertical structure and proposed moat shape. Physically based models are the ambient and stress bias conditions of TCAD tool. As an analysis results, shallow trench structure were intended to be electric functions of passive as device dimensions shrink, the electrical characteristics influence of proposed STI structures on the transistor applications become stronger the potential difference electric field and saturation threshold voltage, are decreased the stress effects of active region. The fabricated device of based on analysis results data were the almost same characteristics of simulation results data.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.11 s.176
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• pp.165-172
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• 2005

In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

• Analytical Science and Technology
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• v.5 no.4
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• pp.359-366
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• 1992

Using micro-Raman spectrometer, we investigated the evaluation of microstress on silicon surface after the local thermal oxidation. The induced stress of silicon surface after local thermal oxidation shows maximum value at the interface of silicon oxide and active area. The smaller the size of active area, the larger stress. From the evaluation of three other device isolation processes, A, B and moB, whose active size has $0.45{\mu}m$ in length, moB process is turned out to have the lowest stress value and the smallest bird's beak effect.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.448-451
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• 2007

DuPont Teijin $Films^{TM}$ (DTF) have developed engineered substrates specifically for the flexible electronics market. $Teonex^{(R)}$ Q65, $Melinex^{(R)}$ ST506 and ST504 are biaxially oriented crystalline polyesters with the option of planarised surfaces. These films are emerging as competitive materials for the base substrate in OLED displays and active matrix backplanes. Given the demanding dimensional reproducibility requirements in the display applications, it is critical to control the several factors that can influence the film distortion in order to achieve the ultimate performance. This paper will discuss the impact of thermal stress, mechanical stress and the processing environment on dimensional reproducibility of polyester film and give examples of how this impacts on the film in device manufacture.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.300-305
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• 2018

The uncooled microbolometer thermal sensor for low cost and mass volume was designed to target the new infrared market that includes smart device, automotive, energy management, and so on. The microbolometer sensor features 80x60 pixels low-resolution format and enables the use of wafer-level vacuum packaging (WLVP) technology. Read-out IC (ROIC) implements infrared signal detection and offset correction for fixed pattern noise (FPN) using an internal digital to analog convertor (DAC) value control function. A reliable WLVP thermal sensor was obtained with the design of lid wafer, the formation of Au80%wtSn20% eutectic solder, outgassing control and wafer to wafer bonding condition. The measurement of thermal conductance enables us to inspect the internal atmosphere condition of WLVP microbolometer sensor. The difference between the measurement value and design one is $3.6{\times}10-9$ [W/K] which indicates that thermal loss is mainly on account of floating legs. The mean time to failure (MTTF) of a WLVP thermal sensor is estimated to be about 10.2 years with a confidence level of 95 %. Reliability tests such as high temperature/low temperature, bump, vibration, etc. were also conducted. Devices were found to work properly after accelerated stress tests. A thermal camera with visible camera was developed. The thermal camera is available for non-contact temperature measurement providing an image that merged the thermal image and the visible image.