• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.660-663
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• 2001

There is a mechanical device between the superstructure and substructure of a bridge, which transmit vertical load of superstructure to the substructure and absorb horizontal displacement of super structure due to thermal, dynamic, load, etc. In order to meet two requirements at once, the structure of roller between plates is widely used, and this roller between plates is widely used, and this roller shoe system is known to have smaller horizontal movement resistance than any other type of bridge shoe. In this study, rolling friction resistance characteristics of roller-plate friction system is investigated according to roller dimension, vertical load, hardness and roughness of roller and plate. On the base of the results, the rolling friction resistance of large scale roller shoe is evaluated using model experiment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.156-159
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• 2002

Film Bulk Acoustic wave Resonator (FBAR) using thin piezoelectric films can be fabricated as monolithic integrated devices with compatibility to semiconductor process, leading to small size, low cost and high Q RF circuit elements with wide applications in communications area. This paper presents a MMIC compatible Suspended FBAR using surface micromachining. It is possible to make Si$_3$N$_4$/SiO$_2$/Si$_3$N$_4$membrane by using surface micromachining and its good effect is to remove the substrate silicon loss. FBAR was made on 2$\mu\textrm{m}$ multi-layered membrane using CVD process. According to our result, Fabricated film bulk acoustic wave resonator has two adventages. First, in the respect of device Process, our Process of the resonator using surface micromachining is very simple better than that of resonator using bull micromachining. Second, because of using the multiple layer, thermal expansion coefficient is compensated, so, the stress of thin film is reduced.

• Fire Science and Engineering
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• v.28 no.4
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• pp.21-28
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• 2014

This study obtained the following results by analyzing the standards related to a $1{\phi}$ 2W MCCB and evaluating its heat resistance characteristics. Since KS C 8321 corresponds to IEC 60947-2 standards, most of the related regulations are similar. The NFPA, which presents the user oriented safety regulations, contains no details about tests or inspections, etc., but it does specify in detail the regulations directly related to safety. It can be seen that KS C 8321 classifies in detail the items about tests and inspections. However, IEC 60947-2 and IEEE C37.51 simplified the test and inspection items or omitted some of them. When applying thermal stress to an MCCB for 6 hours at $180^{\circ}C$ using a heat resistant experimental device, it was found that the actuator lever was transformed and moved in the tripped state. In addition, most of the fixing hanger was melted down, losing their function. When applying thermal stress to the MCCB at $90^{\circ}C$, it showed nothing peculiar, but the fixing hanger was partly deformed at $105^{\circ}C$ and $120^{\circ}C$. It was found that the fixing hanger was deformed and the name plate was discolored at $150^{\circ}C$. It can be seen from the analysis of the internals of the MCCB that the trip bar has been melted away and that the up and down operator has moved up. The experiment performed by applying a withstanding voltage of 6 kV for 60 s showed that all items remained intact. In addition, the evaluation of the insulation performance performed by applying DC 500 V using an insulation-resistance tester showed good insulation performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.414-414
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• 2008

Vertically well-aligned Ga-doped ZnO nanorods with different Ga contents were grown by thermal evaporation on a ZnO template. The Ga-doped ZnO nanorods synthesized with 50 wt % Ga with respect to the Zn content showed maximum compressive stress relative to the ZnO template, which led to a rapid growth rate along the c-axis due to the rapid release of stored strain energy. A further increase in the Ga content improved the conductivity of the nanorods due to the substitutional incorporation of Ga atoms in the Zn sites based on a decrease in lattice spacing. The p-n diode structure with Ga-doped ZnO nanorods, as a n-type, displayed a distinct white light luminescence from the side-view of the device, showing weak ultraviolet and various deep-level emissions.

• Journal of the Microelectronics and Packaging Society
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• v.26 no.4
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• pp.141-148
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• 2019

Electronic substrates used in a mobile device is composed of various materials, and when the temperature is changed during manufacturing or operating, thermal deformation and stress concentration occur due to the difference in thermal expansion coefficient of each material. The shadow moiré technique is a non-contact optical method that measures shape or out-of-plane displacement over the entire area, but it is necessary to overcome the Talbot effect for high sensitivity applications. In this paper, LED light sources of various wavelengths was used to overcome the Talbot effect caused in the shadow moiré technique. By using the phase shift method, an experimental method to retain the measurement sensitivity within 10 ㎛/fringe was proposed and evaluated, and this method is applied to the thermal deformation measurement of the mobile electronic substrate. In the case of using white light, there were several areas that could not be measured due to the Talbot effect, but in the case of using blue LED light, it was shown that a precise moiré pattern with a sensitivity of 6.25 ㎛/fringe could be obtained in most areas.

• Proceedings of the Korean Magnestics Society Conference
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• 2010.06a
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• pp.79-79
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• 2010

Semimetallic bismuth (Bi) has been extensively investigated over the last decade since it exhibits very intriguing transport properties due to their highly anisotropic Fermi surface, low carrier concentration, long carrier mean free path l, and small effective carrier mass $m^*$. In particular, the great interest in Bi nanowires lies in the development of nanowire fabrication methods and the opportunity for exploring novel low-dimensional phenomena as well as practical application such as thermoelectricity[1]. In this work, we introduce a self-assembled interconnection of nanostructures produced by an on-film formation of nanowires (OFF-ON) method in order to form a highly ohmic Bi nanobridge. A Bi thin film was first deposited on a thermally oxidized Si (100) substrate at a rate of $40\;{\AA}/s$ by radio frequency (RF) sputtering at 300 K. The sputter system was kept in an ultra high vacuum (UHV) of $10^{-6}$ Torr before deposition, and sputtering was performed under an Ar gas pressure of 2m Torr for 180s. For the lateral growth of Bi nanowires, we sputtered a thin Cr (or $SiO_2$) layer on top of the Bi film. The Bi thin films were subsequently put into a custom-made vacuum furnace for thermal annealing to grow Bi nanowires by the OFF-ON method. After thermal annealing, the Bi nanowires cannot be pushed out from the topside of the Bi films due to the Cr (or $SiO_2$) layer. Instead, Bi nanowires grow laterally as a mean s of releasing the compressive stress. We fabricated a self-assembled Bi nanobridge (d=192 nm) device in-situ using OFF-ON through annealing at $250^{\circ}C$ for 10hours. From I-V measurements taken on the Bi nanobridge device, contacts to the nanobridge were found highly ohmic. The quality of the Bi nanobridge was also proved by the high MR of 123% obtained from transverse MR measurements. These results manifest the possibility of self-assembled nanowire interconnection between various nanostructures for a variety of applications and provide a simple device fabrication method to investigate transport properties on nanowires without complex patterning and etching processes.

• Applied Microscopy
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• v.30 no.4
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• pp.337-345
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• 2000

Introduction of the buffer layer and the nitridation of a sapphire substrate were one of the most general methods employed for the reduction of lattice defects in GaN thin films Brown on sapphire by MOCVD. In an effort to improve the initial nucleation and growth condition of the GaN, reactive ion beam (RIB) of nitrogen treatment of the sapphire surface has been attempted. The 10 nm thick, amorphous $AlO_xN_y$ layer was formed by RIB and was partially crystallized alter the main growth of GaN at high temperature, leaving isolated amorphous regions at the interface. The beneficial effect of amorphous layer at interface in relieving the thermal stress between substrate and GaN film was examined by measuring the lattice strain value of the GaN film grown with and without the RIB treatment. Higher order Laue zone pattern (HOLZ) of $[\bar{2}201]$ zone axis was compared with simulated patterns and lattice strain was estimated It was confirmed that the great reduction of thermal strain was achieved by RIB process and the amount of thermal stress was 6 times higher in the GaN film grown by conventional method without the RIB treatment.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.5
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• pp.371-375
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• 2019

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

• Macromolecular Research
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• v.15 no.1
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• pp.44-50
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• 2007

This study investigated the effect of ultrasound irradiation on the blend of poly(lactic acid) (PLA) and poly(butylene adipate-co-terephthalate) (PBAT). The blends of PLA/PBAT(50/50) (PBAT50) were prepared in a melt mixer with an ultrasonic device attached. Thermal, rheological, and mechanical properties, morphology, and biodegradability of the sonicated blends were analysed. The viscosity of the sonicated blends was increased by the ultrasound irradiation owing to the strong interaction. The morphology of the sonicated blends was significantly dependent on the duration o the ultrasound irradiation. For PBAT50, the phase size reduction was maximized when the blends were ultrasonically irradiated for 30 sec. At longer duration of ultrasound irradiation, the PBAT phase underwent flocculation. Measurement of the tensile properties showed an increased breakage tensile stress and an enhanced Young's modulus when the blends were properly irradiated. This improvement was ascribed to better adhesion between the PLA matrix and the PBAT domain and to better dispersion of the PBAT phase. However, the tensile properties were maximized after excessive energy irradiation, which was ascribed to an emulsifying effect leading to coalescence of the PBAT phase. Impact strength was increased to reach a peak with the ultrasound irradiation, and was higher than the untreated sample for all sonicated samples due to the difference of failure mechanism between the tensile test and the impact test.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.10
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• pp.1888-1894
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• 2011

In this study, large-current (75 - 400 A), high-voltage (500 - 1000 $V_{rms}$), reliable capacitors with capacitances (C) of 100 - 1000 nF were developed for energy storage facility applications. Mica was used as the dielectric of the capacitors. In order to form a parallel stack of a capacitor element, 50 ${\mu}m$ thick mica sheets with a size of $30mm{\times}35mm$ were used with lead foils for the plate lead type of mica capacitors (HCM-L), while the same sizes of mica sheets coated by Ag paste were employed with lead foils for the parallel plate terminal type (HCM-C). The developed capacitors exhibited well behaviored device characteristics which meet the requirements of the capacitors. The developed capacitors also showed excellent characteristics for thermal shock test. The stability characteristics of developed capacitors for large current stress was superior to those measured for the capacitors prepared recently by CDETm.