Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Research Trends for Improvement of NBIS Instability in Amorphous In-Ga-ZnO Based Thin-Film Transistors

비정질 인듐-갈륨-아연 산화물 기반 박막 트랜지스터의 NBIS 불안정성 개선을 위한 연구동향

  • Yoon, Geonju (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Park, Jinsu (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Kim, Jaemin (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Cho, Jaehyun (Department of Electrical and Computer Engineering, Sungkyunkwan University) ;
  • Bae, Sangwoo (Technology Quality & Reliability Foundry Division Samsung Electronics Co., LTD.) ;
  • Kim, Jinseok (Technology Quality & Reliability Foundry Division Samsung Electronics Co., LTD.) ;
  • Kim, Hyun-Hoo (Department of Display Engineering, Doowon Technical University) ;
  • Yi, Junsin (Department of Electrical and Computer Engineering, Sungkyunkwan University)
  • 윤건주 (성균관대학교 전자전기컴퓨터공학과) ;
  • 박진수 (성균관대학교 전자전기컴퓨터공학과) ;
  • 김재민 (성균관대학교 전자전기컴퓨터공학과) ;
  • 조재현 (성균관대학교 전자전기컴퓨터공학과) ;
  • 배상우 (삼성전자 Foundry 개발QA그룹) ;
  • 김진석 (삼성전자 Foundry 개발QA그룹) ;
  • 김현후 (두원공과대학교 디스플레이공학과) ;
  • 이준신 (성균관대학교 전자전기컴퓨터공학과)
  • Received : 2019.05.13
  • Accepted : 2019.07.12
  • Published : 2019.09.01
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Abstract

Developing a thin-film transistor with characteristics such as a large area, high mobility, and high reliability are key elements required for the next generation on displays. In this paper, we have investigated the research trends related to improving the reliability of oxide-semiconductor-based thin-film transistors, which are the primary focus of study in the field of optical displays. It has been reported that thermal treatment in a high-pressure oxygen atmosphere reduces the threshold voltage shift from -7.1 V to -1.9 V under NBIS. Additionally, a device with a $SiO_2/Si_3N_4$ dual-structure has a lower threshold voltage (-0.82 V) under NBIS than a single-gate-insulator-based device (-11.6 V). The dual channel structure with different oxygen partial pressures was also confirmed to have a stable threshold voltage under NBIS. These can be considered for further study to improve the NBIS problem.

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