• Journal of Electrical Engineering and Technology
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• v.12 no.1
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• pp.284-287
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• 2017

This paper introduces liquid crystal (LC) alignment and its electro-optical properties in the LC cells with silver nanowire (AgNW) networks. The AgNW network was used as an electrode of LC cell as a substitute for an indium-tin-oxide (ITO) film. LC alignment characteristics in the LC cell using AgNW networks, which have two different sheet resistances of $60{\Omega}/m^2$ and $80{\Omega}/m^2$, were observed. The LC alignment characteristics including pretilt angle, LC alignment state, and thermal stability are similar irrespective of sheet resistance of AgNW network. However, twisted-nematic (TN)-LC cell normally operated when using AgNW network with sheet resistance of $80{\Omega}/m^2$. Electrooptical properties of TN-LC cell exhibited competitive performance compared to those of TN-LC cell based on conventional ITO electrode, which allow new approaches to replace conventional ITO electrode in display technology.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.28.2-28.2
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• 2009

Cobalt thin film was fabricated by a novel NH3-based plasma-enhanced atomic layer deposition(PE-ALD) using Co(CpAMD) precursor and $NH_3$ plasma. The PE-ALD Co thin films were produced well on both thermally grown oxide (100 nm) $SiO_2$ and Si(001) substrates. Chemical bonding states and compositions of PE-ALD Co films were analyzed by XPS and discussed in terms of resistivity and impurity level. Especially, we successfully developed PE-ALD Code position at very low growth temperature condition as low as $T_s=100^{\circ}C$, which enabled the fabrication of Co patterns through lift-off method after the deposition on PR patterned substrate without any thermal degradation.

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.2
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• pp.47-49
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• 2004

Gate protection $SiN_x$ as an alternative to a conventional re-oxidation process in Dynamic Random Access Memory devices is investigated. This process can not only protect the gate electrode tungsten against oxidation, but also save the thermal budget due to the re-oxidation. The protection $SiN_x$ process is applied to the poly-Si gate, and its device performance is measured and compared with the re-oxidation processed poly-Si gate. The results on the gate dielectric integrity show that etch damage-curing capability of protection $SiN_x$ is comparable to the re-oxidation process. In addition, the hot carrier immunity of the $SiN_x$ deposited gate is superior to that of re-oxidation processed gate.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1469-1472
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• 2006

We investigated the electrical and optical properties of ZnO:Al thin films as a function of the thermal process conditions. The film was prepared by RF magnetron sputtering followed by annealing in a box furnace in air. An ZnO:Al (98:2) alloy with the purity of 99.99% (3 inch diameter) was used as the target material. The electrical properties of the transparent electrode, exhibited surface oxidation as a result of rapid oxygen absorption with increasing annealing temperature. The processed ZnO:Al films and commercial ITO(indium-tin-oxide) were applied to an OLED stack to investigate the current density and luminescence efficiency. The efficiency of the device using the ZnO:Al electrode was higher than that from the device using the ITO electrode.

• Journal of Information Display
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• v.10 no.1
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• pp.19-23
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• 2009

In this paper, we review the proposed liquid crystal display (LCD) with a tunable viewing angle consisting of a conventional liquid crystal display (LCD) panel and a thermally variable retardation layer (TVRL) characterized by uniformly aligned LC film with transparent indium-tin-oxide electrodes for Joule heating. In the TVRL, nematic phase is transitioned into isotropic by Joule heating. The numerical calculation showed that the intrinsic wide viewing angle was achieved at the isotropic phase of the TVRL by Joule heating, whereas the narrow viewing angle was obtained at the nematic phase of the TVRL. The simulated and experimental results of the proposed LCD show continuous and symmetrical viewing angle characteristics by tuning the retardation of TVRL using Joule heating. The structure of the viewing angle control proposed here is adoptable to all LCD modes with wide viewing angle characteristics.

• Electrical & Electronic Materials
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• v.4 no.2
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• pp.175-184
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• 1991

급속 열처리 방법으로 두께가 약 80.angs.C인 산화막을 성장시킨 후 950.angs.C와 1150.angs.C의 온도에서 15초-120초 동안 질화 및 재산화 공정을 수행하여 초 박막 구조의 질화 및 재산화된 질화 산화막을 성장하였다. 성장한 질화산 화막과 재 산화된 진화 산화막의 전기적 특성은 C-V, I-V, 전하 포획 및 TDDB 측정등을 통하여 분석하였다. 측정된 소자의 특성으로부터 질화 조건이 950.angs.C, 60초이고 재산화 조건이 1150.angs.C, 60초인 재산화된 질화 산화막은 전기적 스트레스 인가후에 전하 포획에 의한 평탄전압변화(.DELTA. $V_{fb}$ )와 계면 상태밀도( $D_{itm}$)의 증가가 산화막보다 적은 우수한 특성을 나타내는 것을 알 수 있었다.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.153-157
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• 2004

ITO thin films were deposited on PET and soda-lime glass substrates by a dc reactive magnetron sputtering of In-Sn alloy metal target without substrate heater and post-deposition thermal treatment. The dependency of rf-bias voltage and substrate power during deposition processing was investigated to control the electrical and optical properties of ITO films. The range of rf bias voltage is from 0 to -80 V and the substrate power is applied from 10 to 50 W. The minimum resistivity of ITO film is 5.4${\times}$10$^{-4}$ $\Omega$cm at 50 W power and rf-bias voltage of -20 V. The best transmittance of ITO films at 550 nm wavelength is 91 % in the substrate power of 30 W and rf-bias voltage of -80 V.

• Macromolecular Research
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• v.9 no.5
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• pp.259-266
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• 2001

Multiblock copolymer was synthesized by the copolycondensation of oligo(L-lactic acid) prepared by thermal dehydration of L-lactic acid, Pluronic$\^$TM/(PN) and dodecanedioic acid as carboxyl/hydroxyl adjusting agent. This polycondensation proceeded by catalysis of stannous oxide to give the multiblock copolymers with high molecular weight and wide range of compositions. Polymer film was prepared by casting the chloroform solution of the multiblock copolymers having different composition. The multiblock copolymers having relatively high contents of poly(L-lactide) were melt spun into filaments which were subsequently drawn at 60$^{\circ}C$. The copolymer films and the filaments showed an improved flexibility due to the incorporation of the soft segments.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1430-1432
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• 2003

Al doped Zinc Oxide(ZnO:Al) films, which is widely used as a transparent conductor in optoelectronic devices such as solar cell, plasma display panel, thermal heater, and other sensors, were prepared by using the capacitively coupled DC magnetron sputtering method. The influence of the substrate temperature, working gas pressure and deposition time on the electrical, optical and morphological properties were investigated experimentally. ZnO:Al films with the optimum growth conditions of working gas pressure and substrate temperature showed resistivity of $9.64{\times}10^{-4}\;{\Omega}$-cm and transmittance of 90.02% for a film 860nm thick in the wavelength range of the visible spectrum.