• Journal of the Korea Academia-Industrial cooperation Society
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• v.10 no.11
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• pp.3054-3059
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• 2009

Natural black diamonds of single crystal, polycrystalline, and agglomerated roughs become important for their industrial and gem stone application. We performed the conventional gemological tests of thermal diffusion, apparent density, scratch test, and magnification test as well as the advanced tests of Raman spectroscopy, X-ray diffraction test and Lang topography. We conclude that scratch test with SiC paper was the most efficient method in view point of speed and cost. Raman spectroscopy and XRD were useful for identification of diamond while Lang topography offered a good visualization method of the grain structure of polycrystalline black diamond roughs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.86-86
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• 2018

볼트, 너트 등의 파스너는 건축 재료나 기계부품을 고정하는 데 사용하는 기계요소로, 건축, 철도, 조선 등 전 산업분야에 걸쳐 사용되고 있다. 그 중 스테인리스 소재의 볼트, 너트는 뛰어난 내식성과 저렴한 가격으로 널리 사용되고 있는데, 소재의 특성 및 작업현장의 상황, 온도의 변화 등의 원인에 의해 고착현상(galling)이 발생한다. 고착현상이란 성분 혹은 표면경도가 비슷한 금속의 나사산을 조이는 과정에서 발생하는 압력의 증가 및 마찰력에 의해 냉간 용접(cold welding)이 일어나는 것으로 나사산의 표면이 눌어붙게 된다. 이러한 고착현상은 스테인리스 소재에서 많이 발생하는데, 한번 발생한 후에는 비파괴 해소가 불가능한 상태가 되어 경제적 손실을 야기한다. 이러한 고착현상의 해소를 위해 본 연구에서는 주석과 알루미늄을 사용한 새로운 열 확산 코팅 기술을 개발하고 이를 304 스테인리스강에 적용하여 열처리 온도에 따른 특성변화를 확인하였다. 열 확산 코팅을 위해 팩 세멘테이션 방법을 이용하여 아르곤 분위기 하에서 열처리 하였고, 온도는 $200{\sim}250^{\circ}C$에서 코팅을 수행하였다. 이에 따른 코팅 전과 후의 표면 및 단면 분석을 통해 성공적으로 코팅층이 형성됨을 확인하였고, 온도가 증가함에 따라 코팅성분의 양이 증가하는 현상을 보임을 알 수 있었다. 또한, 고착방지성능을 확인하기 위하여 ASTM G196-08 시험을 통해 코팅조건에 따른 고착현상을 분석하였으며, 그 결과 기존에 코팅되지 않은 304 스테인리스강보다 고착현상이 개선됨을 확인하였다. 따라서 304 스테인리스강 소재의 볼트, 너트 제품에 주석-알루미늄 코팅층을 적용시키면 기존의 고착현상을 개선하고 서비스 품질을 향상시킬 수 있을 것으로 판단된다.

• Journal of the Korean Society of Safety
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• v.9 no.4
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• pp.29-41
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• 1994

High temperature tensiles tests, steady state creep tests, internal stress tests and creep rupture tests using Al 7075 alloy were performed over the temperature range of 9$0^{\circ}C$~50$0^{\circ}C$ and stress range of 0.64~17.2(kgf/$\textrm{mm}^2$) in order to investigate the creep behavior and predict creep rupture life From the apparent activation energy Qc and the applied stress exponent n measured, at the temperature range of 9$0^{\circ}C$~l2$0^{\circ}C$, the creep deformation seemed to be controlled by cross slip. On the other hand at the temperature of 20$0^{\circ}C$~23$0^{\circ}C$ the creep deformation seemed to be controlled by dislocation climb but at 47$0^{\circ}C$~50$0^{\circ}C$, by diffusion creep. And the rupture life(t$_{f}$) might be represented by anthermal process attributed to the difference of the applied stress dependence of Internal stress and the ratio of the Internal stress to the applied stress, the thermal activated process attributied to the temperature dependence of the internal stress. Also the ratio between stress dependence of primary creep rate and that of minimum creep rate was measured 0.46, the minimum creep rate is expected to be appromately obtained from master creep curve including the relationship primary creep rate and minumum creep rate. Finally the relationship new rupture parameter and logarithmic stress was represented with including the ratio between the dependence of primary creep rate and that of minimum creep rate, using the new rupture parameter the rupture life predition is exactly expected.d.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.602-610
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• 2012

The powders for the $Na_xWO_3$ (x= 1 and 0.75) sputtering targets were synthesized by the calcination in reductive atmosphere. Near single-phase $NaWO_3$ and single-phase $Na_{0.75}WO_3$ powder targets were prepared. By using the targets, thin films of each composition were deposited by rf magnetron sputtering on the $SiO_2$ (100 nm)/Si substrates and annealed by RTP (rapid thermal processing) for crystallization. In the case of the $NaWO_3$ composition, single-phase $Na_xWO_3$ thin films, where x was believed to be slightly less than 1, were fabricated accompanying the Na-diffusion into the substrates during RTP. However, in the case of the $Na_{0.75}WO_3$ thin film preparation, it was unable to make single-phase thin films. From the phase formation behaviors of both powders and thin films, it was revealed that $Na_xWO_3$ with nonstoichiometric composition of x, which was slightly less than 1, was favorable. The good electrical conduction properties were obtained from the single-phase $Na_xWO_3$ thin films. Their electrical resistivities were as low as $7.5{\times}10^{-4}{\Omega}{\cdot}cm$.

• Korean Journal of Materials Research
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• v.8 no.6
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• pp.484-492
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• 1998

The formation mechanism of the epitaxial cobalt silicide from Co/Ti/OOO) Si structure has been investigated. The transition temperature of CoSi to CoSi, was found to increase with increasing the Ti interlayer thickness, which may be owing to the occupation of the tetrahedral sites by Ti atoms in the CoSi crystal structure as well as the blocking effect of the Ti interlayer on the diffusion of Co. Also, the Co- Ti-O ternary compound formed at the metal! Si interface at the begining of silicidation, which seems to play an important role in epitaxial growth of Co silicide. The final layer structures obtained after a rapid thermal annealing of the Cot Ti/( 100) Si bi-layer structure turned out to be Ti oxide/Co- Ti-Si/epi-$CoSi_2$/OOO)

• Korean Journal of Materials Research
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• v.20 no.8
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• pp.434-438
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• 2010

The selenization process has been a promising method for low-cost and large-scale production of high quality CIGS film. However, there is the problem that most Ga in the CIGS film segregates near the Mo back contact. So the solar cell behaves like a $CuInSe_2$ and lacks the increased open-circuit voltage. In this study we investigated the Ga distribution in CIGS films by using the $Ga_2Se_3$ layer. The $Ga_2Se_3$ layer was applied on the Cu-In-Ga metal layer to increase Ga content at the surface of CIGS films and to restrict Ga diffusion to the CIGS/Mo interface with Ga and Se bonding. The layer made by thermal evaporation was showed to an amorphous $Ga_2Se_3$ layer in the result of AES depth profile, XPS and XRD measurement. As the thickness of $Ga_2Se_3$ layer increased, a small-grained CIGS film was developed and phase seperation was showed using SEM and XRD respectively. Ga distributions in CIGS films were investigated by means of AES depth profile. As a result, the [Ga]/[In+Ga] ratio was 0.2 at the surface and 0.5 near the CIGS/Mo interface when the $Ga_2Se_3$ thickness was 220 nm, suggesting that the $Ga_2Se_3$ layer on the top of metal layer is one of the possible methods for Ga redistribution and open circuit voltage increase.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.149-154
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• 2005

We fabricated Ni/Co(or Co/Ni) composite silicide layers on the non-patterned wafers from Ni(20 nm)/Co(20 nm)/poly-Si(70 nm) structure by rapid thermal annealing of $700{\~}1100^{\circ}C$ for 40 seconds. The sheet resistance, cross-sectional microstructure, and surface roughness were investigated by a four point probe, a field emission scanning electron microscope, and a scanning probe microscope, respectively. The sheet resistance increased abruptly while thickness decreased as silicidation temperature increased. We propose that the poly silicon inversion due to fast metal diffusion lead to decrease silicide thickness. Our results imply that we should consider the serious inversion and fast transformation in designing and process f3r the nano-height fully cobalt nickel composite silicide gates.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.1
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• pp.30-34
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• 2010

$CoSb_3$-based skutterudite compounds are promising candidates as thermoelectric (TE) materials used in intermediate temperature region. In this study, sintering of $CoSb_3$ powder and joining of $CoSb_3$ to copper-molybdenum electrode have been simultaneously performed by spark plasma sintering technique. The Ti foil was used for preventing the diffusion of copper into $CoSb_3$ and the Cu : Mo = 3 : 7 Vol. ratio composition was selected by the consideration of thermal expansion coefficients. The insertion of Ti interlayer between Cu-Mo and $CoSb_3$ was effective to join $CoSb_3$ to Cu-Mo by forming an intermediate layer of $TiSb_2$ at the Ti-$CoSb_3$ boundary. However, the formation of TiSb and TiCoSb intermediate layers deteriorated the joining properties by the generation of cracks in the interface of intermediate layer/$CoSb_3$ and intermediate/intermediate layers.

• Environmental Sciences Bulletin of The Korean Environmental Sciences Society
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• v.1 no.1
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• pp.35-43
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• 1997

Handling the emergency problems such as Chemobyl accident require real time prediction of pollutants dispersion. One-point real time sounding at pollutant source and simple model including turbulent-radiation process are very important to predict dispersion at real time. The stability categories obtained by one-dimensional numerical model (including PBL dynamics and radiative process) are good agreement with observational data (Golder, 1972). Therefore, the meteorological parameters (thermal, moisture and momentum fluxes; sensible and latent heat; Monin-Obukhov length and bulk Richardson number; vertical diffusion coefficient and TKE; mixing height) calculated by this model will be useful to understand the structure of stable boundary layer and to handling the emergency problems such as dangerous gasses accident. Especially, this simple model has strong merit for practical dispersion models which require turbulence process but does not takes long time to real predictions. According to the results of this model, the urban area has stronger vertical dispersion and weaker horizontal dispersion than rural area during daytime in summer season. The maximum stability class of urban area and rural area are 'A' and 'B' at 14 LST, respectively. After 20 LST, both urban and rural area have weak vertical dispersion, but they have strong horizontal dispersion. Generally, the urban area have larger radius of horizontal dispersion than rural area. Considering the resolution and time consuming problems of three dimensional grid model, one-dimensional model with one-point real sounding have strong merit for practical dispersion model.