• Journal of the Korean Vacuum Society
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• v.7 no.1
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• pp.17-23
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• 1998

$Pb(Fe_{0.5}Nb_{0.5}O_3(PFN)$ thin films were prepared by rf magnetron co-sputtering method on $SiO_2/Si$, ITO/glass, and $Pt/Ti/SiO_2/Si$ substrates and post-annealed at the $N_2$ atmosphere by RTA(rapid thermal annerling). The degree of crystallinity of PFN films was identified on various substrates. Electrical properties of PFN films was characterized for $Pt/PFN/Pt/Ti/SiO_2/Si$ structure. The composition of PFN films was estimated by EPMA (electron probe micro analysis). PFN films would be crystallized better to perovskite phase on ITO/glass substrate than $SiO_2/Si$ substrate. This may be induced by the deformation of Pb deficient pyrochlore phase due to Pb diffusion into $SiO_2/Si$ substrate. PFN films on $Pt/Ti/SiO_2/Si$ substrate. PFN films with 5-10% Pb excess were crystallized to perovskite phase from $500^{\circ}C$ temperature. In summary, we show that Pb composition and annealing temperature were critically influenced on crystallinity to perovskite phase. When PFN film with 17% Pb excess was annealed at $600^{\circ}C$ at the $N_2$ atmosphere for 300kV/cm and 88. Its remnant polarization coercive field $2.0 MC/cm^2$ and 144kV/cm, respectively.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.217-223
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• 2010

We grew multi-stacked InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) structure by metal organic chemical vapor deposition and investigated optical properties by photoluminescence and I-V characteristics by dark current measurement. When stacking InAs quantum dots (QDs) with same growth parameter, the size and density of QDs were changed, resulting in the bimodal emission peak. By decreasing the flow rate of TMIn, we achieved the uniform multi-stacked QD structure which had the single emission peak and high PL intensity. As the growth temperature of n-type GaAs top contact layer (TCL) is above $600^{\circ}C$, the PL intensity severely decreased and dark current level increased. At bias of 0.5 V, the activation energy for temperature dependence of dark current decreased from 106 meV to 48 meV with increasing the growth temperature of n-type GaAs TCL from 580 to $650^{\circ}C$. This suggest that the thermal escape of bounded electrons and non-radiative transition become dominant due to the thermal inter-diffusion at the interface between InAs QDs and $In_{0.1}Ga_{0.9}As$ well layer.

• Journal of the Microelectronics and Packaging Society
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• v.29 no.3
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• pp.55-61
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• 2022

In this study, properties of Pb-free solder joints which were combined using Sn-3.0Ag-0.5Cu (SAC305) Pb-free solder with a mid-temperature type of melting temperature and Sn-57Bi-1Ag Pb-free solder with a low-temperature type of melting temperature were reported. Combined Pb-free solder joints were formed by reflow soldering processes with ball grid array (BGA) packages which have SAC305 solder balls and flame retardant-4 (FR-4) printed circuit boards (PCBs) which printed Sn-57Bi-1Ag solder paste. The reflow soldering processes were performed with two types of temperature profiles and interfacial properties of combined Pb-free solder joints such as interfacial reactions, formations of intermetallic compounds (IMCs), diffusion mechanisms of Bi, and so on were analyzed with the reflow process conditions. In order to compare reliability characteristics of combined Pb-free solder joints, we also conducted thermal shock test and analyzed changes of mechanical properties for joints from a shear test during the thermal shock test.

• Korean Chemical Engineering Research
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• v.59 no.2
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• pp.239-246
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• 2021

Characteristics of hydrodynamics and heat absorption by gas in a directly-irradiated fluidized bed particle receiver (50 mm-ID X 150 mm high) of SiC particles have been determined. Solid holdups of SiC particles show almost constant values with increasing gas velocity. Fine SiC particles (SiC II; dp=52 ㎛, ρs=2992 kg/㎥) showed low values of relative standard deviation of pressure drop across bed but high solids holdups in the freeboard region compared to coarse SiC particles (SiC I; dp=123 ㎛, ρs=3015 kg/㎥). The SiC II exhibited higher values of temperature difference normalized by irradiance due to the effect of additional solar heat absorption and heat transfer to the gas by the particles entrained in the freeboard region in addition to the efficient thermal diffusion of the solar heat received at bed surface. Heat absorption rate and efficiency increased with increasing the gas velocity and fluidization number. The SiC II showed maximum heat absorption rate of 17.8 W and thermal efficiency of 14.8%, which are about 33% higher than those of SiC I within the experimental gas velocity range.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.233-241
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces strictly related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.09a
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• pp.211-219
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• 2004

A new alloy definition will be presented concerning increasing demands for the board level reliability of miniaturized interconnections. The damage mechanism for LFBGA components on different board finishes is not quite understood. Further demands from mobile phones are the drop test, characterizing interface performance of different package constructions in relation to decreased pad constructions and therefore interfaces. The paper discusses the characterization of interfaces based on SnPb, SnPbXYZ, SnAgCu and SnAgCuInNd ball materials and SnAgCuInNd as solder paste, the stability after accelerated tests and the description of modified interfaces stric시y related to the assembly conditions, dissolution behavior of finishes on board side and the influence of intermetallic formation. The type of intermetallic as well as the quantity of intermetallics are observed, primaliry the hardness, E modules describing the ability of strain/stress compensation. First results of board level reliability are presented after TCT-40/+150. Improvement steps from the ball formulation will be discussed in conjunction to the implementation of lead free materials. In order to optimize ball materials for area array devices accelareted aging conditions like TCTs were used to analyze the board level reliability of different ball materials for BGA, LFBGA, CSP, Flip Chip. The paper outlines lead-free ball analysis in comparison to conventional solder balls for BGA and chip size packages. The important points of interest are the description of processability related to existing ball attach procedures, requirements of interconnection properties and the knowledge gained the board level reliability. Both are the primary acceptance criteria for implementation. Knowledge about melting characteristic, surface tension depend on temperature and organic vehicles, wetting behavior, electrical conductivity, thermal conductivity, specific heat, mechanical strength, creep and relaxation properties, interactions to preferred finishes (minor impurities), intermetallic growth, content of IMC, brittleness depend on solved elements/IMC, fatigue resistance, damage mechanism, affinity against oxygen, reduction potential, decontamination efforts, endo-/exothermic reactions, diffusion properties related to finishes or bare materials, isothermal fatigue, thermo-cyclic fatigue, corrosion properties, lifetime prediction based on board level results, compatibility with rework/repair solders, rework temperatures of modified solders (Impurities, change in the melting point or range), compatibility to components and laminates.

• Journal of Energy Engineering
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• v.22 no.4
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• pp.399-405
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• 2013

The gas motion inside the engine cylinder plays a very important role in determining the thermal efficiency of an internal combustion engine. A precise information of in-cylinder three dimensional complex gas motion is crucial in optimizing engine design. Homogeneous charge compression ignition (HCCI) engine is a combustion concept, which is a hybrid between Otto and Diesel engine. The turbulent diffusion leads to increased rates of momentum, heat and mass transfer. The in-cylinder turbulence flow was found to affect the present HCCI combustion mainly through its influence on the wall heat transfer. This study investigates the effect of piston geometry shape on the turbulent flow characteristics of in-cylinder from the numerical analysis using the LES model and the results obtained can offer guidelines of the combustion geometries for better combustion process and engine performance.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.179-184
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• 2016

In recent years, the on-resistance, power loss and cell density of Si power devices have not exhibited significant improvements, and performance is approaching the material limits. GaN is considered an attractive material for future high-power applications because of the wide band-gap, large breakdown field, high electron mobility, high switching speed and low on-resistance. Here we report on the Ohmic contact resistance and reverse-bias characteristics of AlGaN/GaN Schottky barrier diodes with and without annealing. Annealing in oxygen at $500^{\circ}C$ resulted in an increase in the breakdown voltage from 641 to 1,172 V for devices with an anode-cathode separation of $20{\mu}m$. However, these annealing conditions also resulted in an increase in the contact resistance of $0.183{\Omega}-mm$, which is attributed to oxidation of the metal contacts. Auger electron spectroscopy revealed diffusion of oxygen and Au into the AlGaN and GaN layers following annealing. The improved reverse-bias characteristics following annealing in oxygen are attributed to passivation of dangling bonds and plasma damage due to interactions between oxygen and GaN/AlGaN. Thermal annealing is therefore useful during the fabrication of high-voltage GaN devices, but the effects on the Ohmic contact resistance should be considered.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.297.2-297.2
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• 2016

Photoacoustic generation of ultrasound is an effective approach for development of high-frequency and high-amplitude ultrasound transmitters. This requires an efficient energy converter from optical input to acoustic output. For such photoacoustic conversion, various light-absorbing materials have been used such as metallic coating, dye-doped polymer composite, and nanostructure composite. These transmitters absorb laser pulses with 5-10 ns widths for generation of tens-of-MHz frequency ultrasound. The short optical pulse leads to rapid heating of the irradiated region and therefore fast thermal expansion before significant heat diffusion occurs to the surrounding. In this purpose, nanocomposite thin films containing gold nanoparticles, carbon nanotubes (CNTs), or carbon nanofibers have been recently proposed for high optical absorption, efficient thermoacosutic transfer, and mechanical robustness. These properties are necessary to produce a high-amplitude ultrasonic output under a low-energy optical input. Here, we investigate carbon nanotube (CNT)-polydimethylsiloxane (PDMS) composite transmitters and their nanostructure-originated characteristics enabling extraordinary energy conversion. We explain a thermoelastic energy conversion mechanism within the nanocomposite and examine nanostructures by using a scanning electron microscopy. Then, we measure laser-induced damage threshold of the transmitters against pulsed laser ablation. Particularly, laser-induced damage threshold has been largely overlooked so far in the development of photoacoustic transmitters. Higher damage threshold means that transmitters can withstand optical irradiation with higher laser energy and produce higher pressure output proportional to such optical input. We discuss an optimal design of CNT-PDMS composite transmitter for high-amplitude pressure generation (e.g. focused ultrasound transmitter) useful for therapeutic applications. It is fabricated using a focal structure (spherically concave substrate) that is coated with a CNT-PDMS composite layer. We also introduce some application examples of the high-amplitude focused transmitter based on the CNT-PDMS composite film.

• Journal of Welding and Joining
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• v.35 no.1
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• pp.89-94
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• 2017

The microstructure and dilatation for 0.15C steels were investigated to define the phase transformation during the quenching and partitioning (Q&P) process. For the one step Q&P dilatation, the isothermal martensite/bainite transformation occurred because the holding temperature was between $M_s$ and $M_f$. The isothermally transformed martensite/bainite and the athermally transformed martensite were produced by a loss of retained austenite. As the holding time increased, new martensite-start ($M_s$) temperature produced from the final quenching process decreased due to the carbon partitioning from the martensite to the retained austenite. This was the direct evidence of increment for the retained austenite stability. For the two step Q&P dilatation, the isothermal bainitic transformation occurred because the partitioning temperature was larger than the $M_s$ and new $M_s$. The partitioning at $400^{\circ}C$ indicated the short incubation period for the bainite transformation than the $350^{\circ}C$ partitioning because the partitioning at $400^{\circ}C$ should acquire the larger thermal driving force for carbon partitioning than the $350^{\circ}C$ partitioning. A quick drop of $M_s$ and short period of bainite incubation for the $400^{\circ}C$ partitioning steel were also the direct evidence of significant effects of carbon partitioning on the stability of retained austenite.