• Journal of Powder Materials
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• v.30 no.1
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• pp.53-64
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• 2023

Atomic layer etching (ALE) is a promising technique with atomic-level thickness controllability and high selectivity based on self-limiting surface reactions. ALE is performed by sequential exposure of the film surface to reactants, which results in surface modification and release of volatile species. Among the various ALE methods, thermal ALE involves a thermally activated reaction by employing gas species to release the modified surface without using energetic species, such as accelerated ions and neutral beams. In this study, the basic principle and surface reaction mechanisms of thermal ALE?processes, including "fluorination-ligand exchange reaction", "conversion-etch reaction", "conversion-fluorination reaction", "oxidation-fluorination reaction", "oxidation-ligand exchange reaction", and "oxidation-conversion-fluorination reaction" are described. In addition, the reported thermal ALE processes for the removal of various oxides, metals, and nitrides are presented.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.11
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• pp.1912-1920
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• 1997

In the analysis of metal forming process, ALE(Arbitrary Lagrangian Eulerian) finite element methods have been increasingly used for the capability to control mesh independently from material flow. The methods can be divided into two groups i.e., coupled and split formulations. In the present work, the split ALE formulation is used for computational efficiency. A split ALE finite element method developed for rigid-viscoplastic materials and applied to the analysis of hot square die extrusion. Since thermal state greatly affects the product quality, an ALE scheme for temperature analysis is also presented. As computational examples, profile shapes as square and cross-like sections are chosen.

• Journal of the Korean institute of surface engineering
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• v.57 no.3
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• pp.125-139
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• 2024

As the limits of semiconductor integration are approached, the challenges in semiconductor processes have intensified. And, for the production of semiconductors with dimensions under a few nanometers and to resolve the issues related to nanoscale device fabrication, research on atomic layer etching (ALE) technology has been conducted. The investigation related to ALE encompasses not only silicon and dielectric materials but also metallic materials. Particularly, there is an increasing need for ALE in next-generation metal materials that could replace copper in interconnect materials. This brief review will summarize the concept and methods of ALE and describe recent studies on potential next-generation metal replacements for copper, along with their ALE processes.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• Proceedings of the KSRS Conference
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• 2003.11a
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• pp.1445-1456
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• 2003

The ASTER TIR (thermal infrared radiometer) sensor has 5 spectral bands over 8 to 12 ${\mu}$m region. Rock type classification using the ASTER TIR nighttime data was performed in the Erta Ale range of the Ethiopian Rift Valley. Erta Ale range is the most important axial volcanic chain of the Afar region. The petrographic diversity of lava erupted in this area is very important, ranging from magnesian transitional basalt to rhyolites. We tried to classify the rock types based on the spectral behavior of each volcanic rock types in thermal infrared range and estimated SiO$_{2}$ content with emission data by the ASTER TIR.

• Applied Microscopy
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• v.36 no.spc1
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• pp.35-40
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• 2006

Self-assembled InAs/GaAs quantum dots (QDs) were grown by the atomic layer epitaxy (ALE) and molecular beam epitaxy (MBE) techniques, The structure and the thermal stability of QDs have been studied by high resolution electron microscopy with in-situ heating experiment capability, The ALE and MBE QDs were found to form a hemispherical structure with side facets in the early stage of growth, Upon capping by GaAs layer, however, the apex of QDs changed to a flat one. The ALE QDs have larger size and more regular shape than those of MBE QDs. The QDs collapse due to elevated temperature was observed directly in atomic scale, In situ heating experiment within TEM revealed that the uncapped QDs remained stable up to $580^{\circ}C$, However, at temperature above $600^{\circ}C$, the QDs collapsed due to the diffusion and evaporation of In and As from the QDs, The density of the QDs decreased abruptly by this collapse and most of them disappeared at above $600^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.120-123
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• 1993

This paper describes the deposition and characteristics of electrochromic tungsten oxide thin films for electrochromic smart windows. Tungsten Oxide thin films(WO$_3$) are deposited by thermal evaporation techniques. By varying deposition parameters, WO$_3$ thin films exhibit different optical properties. The electrochromic devices are consist of ITO glass/ WO$_3$ thin films/ LiClO$_4$-propylene carbonate electrolyte/ counter electrode. The electrochromic properties of tungsten oxide thin films with different deposition condition ale investigated.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1996.10a
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• pp.185-191
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• 1996

The Variation of die bearing is primary way to control the metal flow in hot square die extrusion process. Finite element computations are carried out to assess the influence of die bearing on metal flow and state variables. The finit element method is developed based on ALE description for a rigid-viscoplastic material. Since thermal state computational example, hot square die extrusion with varied die bearing lengths has been analyzed for the profile of a L-section.

• Journal of Aerospace System Engineering
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• v.15 no.6
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• pp.10-18
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• 2021

A flame deflector prevents a launch system from thermal damage by deflecting the exhaust flame of the launch vehicle. During the deflection of the flame, the flame deflector is subjected to a high-temperature and high-pressure flow, which results in thermal ablation damage at the surface. Predicting this ablation damage is an essential requirement to ensure a reliable design. This paper introduces a numerical method for predicting the ablation damage phenomena based on a one-way fluid-structure interaction (FSI) analysis. In the proposed procedure, the temperature and convective heat transfer coefficient of the exhaust flame are calculated using a fluid dynamics analysis, and then the ablation is calculated using a finite element analysis (FEA) based on the user-subroutine UMESHMOTION and Arbitrary Lagrangian-Eulerian (ALE) adaptive mesh technique in ABAQUS. The result of such an analysis was verified by comparison to the ablation test result for a flame deflector.

• Journal of the Microelectronics and Packaging Society
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• v.6 no.4
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• pp.15-22
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• 1999

Generally, many equipments and a long lead time ale required to manufacture the build-up multilayer board through various processes such as etching, plating, drilling etc. Wet process is suitable for mass production, however it is not adequate for manufacturing prototype in developing stage. In this study, a silk screen printing technology is introduced to make a prototype build-up multilayer board. As for the material photo/thermal curable resin and conductive paste are used for forming dielectric and conductor. And conductive paste fills vias for interconnecting each layer, and also is used for circuit patterning by silk screen technology. Finally, the basic concept and the possibility of build-up multilayer board prototype is proposed and verified as a powerful approach, compared with the conventional processes.