• Corrosion Science and Technology
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• 제2권2호
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• pp.98-101
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• 2003

The Electrical Resistance Probe of carbon steel and weight loss coupons were exposed in atmosphere and in the lake water of Hanoi. The comparison of data received by two methods after one year exposure was presented. The correspondence of the data of these methods on the exposure time in both environments showed a capacity of using Electrical Resistance Probe in Vietnamese natural corrosion testing of Carbon steel.

• International Journal of Safety
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• 제7권2호
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• pp.1-6
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• 2008

In this paper, the effects of the position and the angle of the potential probes on the measurements of the ground resistance using the fall-of-potential method are described and the testing techniques for minimizing the measuring errors are proposed. The fall-of-potential method is theoretically based on the potential and current measuring principle and the measuring error is primarily caused by the position and angle of auxiliary probes. In order to analyze the relative error in the measured value of the ground resistance due to the position of the potential probe, the ground resistance was measured for the case in which the distance of the current probe was fixed at 50[m] and the distance of the potential probe was located from 10[m] to 50[m]. Also, the potential probe was located in turn at $30[^{\circ}]$, $45[^{\circ}]$, $60[^{\circ}]$, $90[^{\circ}]$, and $180[^{\circ}]$. As a consequence, relative error decreased with increasing distance of the potential probe and decreasing angle between the current probe and potential probe. The results could help to determine the position of the potential probe during the ground resistance measurement.

• 전기학회논문지P
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• 제59권4호
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• pp.423-427
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• 2010

Portable sheet resistance-measuring instrument using the dual-configuration Four-Point Probe method is developed for the purpose of precisely measuring the sheet resistance of conducting thin films. While single-configuration Four-Point Probe method has disadvantages of applying sample size, shape and thickness corrections for a probe spacing, the developed instrument has advantages of no such corrections, little edge effects and measuring simply and accurately the sheet resistance between $0.2\Omega/sq$ and $2k\Omega/sq$.

• Journal of Electrical Engineering and Technology
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• 제12권3호
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• pp.1314-1319
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• 2017

A handheld sheet resistance meter that can easily and quickly measure the sheet resistance of indium tin oxide films was developed. The dual-configuration four-point probe method was adopted for this instrument, which measured sheet resistance in the range from $0.26{\Omega}/sq$. to $2.6k{\Omega}/sq$. with 0.3 % ~ 0.5 % uncertainty. The screen of the instrument displayed the sheet resistance when the probe was in contact with the sample surface and the value continued to be displayed during the probe contact. Even after separating the probe from the surface, the value was still displayed on the screen and could be read easily. A feature of the instrument was the use of the dual-configuration technique to reduce edge effects markedly compared with the single-configuration technique and its ease of operation without applying correction factors for sample size and thickness.

• International Journal of Aeronautical and Space Sciences
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• 제14권4호
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• pp.350-355
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• 2013

Electrical resistance change measurements were performed, to detect fatigue damage of a quasi-isotropic CFRP and cross-ply CFRP laminates. A four-probe method was used to measure the exact electrical resistance change. A three-probe method was used to measure the electrical contact resistance change, during long cyclic loading. The specimen side surface was observed using a video-microscope to detect damage. The measured electrical resistance changes were compared with the observed damage. The results of this study show that the electrical resistance increase of the quasi-isotropic laminate was caused by a delamination crack between ${\pm}45^{\circ}$ plies. Matrix cracking caused a small electrical resistance increase of the cross-ply laminate, but the decreased electrical resistance caused by the shear-plastic deformation impedes matrix-cracking detection.

• 한국전기전자재료학회논문지
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• 제18권12호
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• pp.1087-1091
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• 2005

Four-probe device of single ZnO nanowire was fabricated by electron beam lithography. Electrical characterizations in a two-probe and a four-probe configuration with a back-gate were carried out to clarify the relative contribution of the contact and the intrinsic part in a ZnO nanowire. I-V characteristic in four-probe measurement showed an ohmic behavior with a high conductivity, 100 S/cm, which was better than those of two-probe measurement by 10 times. At the same values of the current between two-probe and four-probe, the net voltage applied inside the nanowire were extracted with calculated voltages at the contact. Four-probe current-gate voltage characteristics showed bigger tendencies than those of two-probe measurement at low temperatures, indicating the reduced gate dependence in two-Probe measurements by the existence of the contact resistance.

• 조명전기설비학회논문지
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• 제23권2호
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• pp.96-102
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• 2009

본 논문에서는 전위강하법을 이용한 접지저항 측정시 전위보조전극의 위치 및 각도의 영향에 대하여 기술하였으며, 측정시 오차를 최소화하는 기법을 제안하였다. 전위강하법은 이론적으로 전위와 전류의 측정원리에 근간을 두고 있으며 측정오차는 주로 보조전극의 위치와 각도에 기인한다. 전위보조전각의 위치에 의한 접지저항 측정값의 상대오차를 분석하기 위해 전류보조전극의 거리를 50[m]로 고정시키고 전위보조전극의 거리를 10[m]에서 50[m]까지 변화시키며 접지저항을 측정하였고 또한 전위보조전극과 전류보조전극 사이의 각도를 30[$^{\circ}$], 45[$^{\circ}$], 60[$^{\circ}$], 90[$^{\circ}$], 180[$^{\circ}$]로 변화시키며 측정하였다. 결과적으로 전위보조전극의 거리 증가 및 전류보조전극과 전위보조전극 사이의 각도가 감소할수록 상대오차가 작게 나타났다. 본 실험결과는 접지시스템의 접지저항을 측정할 때 전위보조전극의 위치를 결정하는데 활용될 수 있다.

• 한국전기전자재료학회논문지
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• 제19권9호
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• pp.825-831
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• 2006

As an increase of chip complexity and level of chip integration, chip input/output (I/O) pad pitches are also drastically reduced. With arrival of high complexity SoC (System on Chip) and SiP (System in Package) products, conventional horizontal type probe card showed its limitation on probing density for wafer level test. To enhance probing density, we proposed new vertical type probe card that has the $70{\mu}m$ probe needle with tungsten wire in $80{\mu}m$ micro-drilled hole in ceramic board. To minimize alignment error, micro-drilling conditions are optimized and epoxy-hardening conditions are also optimized to minimize planarity changes. To apply wafer level test for target devices (T5365 256M SDRAM), designed probe card was characterized by probe needle tension for test, contact resistance measurement, leakage current measurement and the planarity test. Compare to conventional probe card with minimum pitch of $50{\sim}125{\mu}m\;and\;2\;{\Omega}$ of average contact resistance, designed probe card showed only $22{\mu}$ of minimum pitch and $1.5{\Omega}$ of average contact resistance. And also, with the nature of vertical probing style, it showed comparably small contact scratch and it can be applied to bumping type chip test.

• Journal of Electrical Engineering and Technology
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• 제10권1호
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• pp.325-330
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• 2015

With approval from the Asia Pacific Metrology Program Working Group on Materials Metrology (APMP WGMM), an international comparison for sheet resistance standards for silicon wafers was firstly conducted among Korea Research Institute of Standards and Science (KRISS) in Korea, CMS/ITRI in Taiwan, and NIM in China, which are national metrology institutes (NMIs), from August 2011 to January 2012. The sheet resistance values of the standards are $10{\Omega}$, $100{\Omega}$, and $1000{\Omega}$; the measurement was conducted in sequence at KRISS, CMS/ITRI, NIM, and KRISS again using the four-point probe method with single and dual configuration techniques. The reference value for the measurement results of the three NMIs was obtained through averaging the values of the three results for each sheet resistance range. The differences between the reference value and the measured values is within 0.22% for $10{\Omega}$, 0.17% for $100{\Omega}$, and 0.12% for $1000{\Omega}$. Therefore, the international consistency for conducting sheet resistance measurements is confirmed within 0.22% through the APMP WGMM approved comparison.

• 한국표면공학회지
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• 제45권2호
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• pp.81-88
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• 2012

Probe tip, which should have not only superior electrical characteristics but also good abrasion resistance for numerous contacts with semiconductor pads to confirm their availability, is essential for MEMS probe card. To obtain good durability of probe tip, it needs thick and crack-free rhodium layer on the tip. However, when the rhodium thickness deposited by electroplating increased, unwanted cracks by high internal stress led to serious problem of MEMS probe tip. This article reported the method of thick Rh deposition with Au buffer layer on the probe tip to overcome the problem of high internal stress and studied mechanical and electrical properties of that. MEMS probe tip with double-Rh layer had good contact resistance and durability during long term touch downs.