Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of a Single ZnO Nanowire in a four-probe Configuration

단일 ZnO 나노선 4단자 소자의 전기적 특성

  • Published : 2005.12.01
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Abstract

Four-probe device of single ZnO nanowire was fabricated by electron beam lithography. Electrical characterizations in a two-probe and a four-probe configuration with a back-gate were carried out to clarify the relative contribution of the contact and the intrinsic part in a ZnO nanowire. I-V characteristic in four-probe measurement showed an ohmic behavior with a high conductivity, 100 S/cm, which was better than those of two-probe measurement by 10 times. At the same values of the current between two-probe and four-probe, the net voltage applied inside the nanowire were extracted with calculated voltages at the contact. Four-probe current-gate voltage characteristics showed bigger tendencies than those of two-probe measurement at low temperatures, indicating the reduced gate dependence in two-Probe measurements by the existence of the contact resistance.

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References

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