• Journal of Radiation Protection and Research
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• v.36 no.4
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• pp.190-194
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• 2011

After the first report that electrons with sub-ionization energy of DNA could cause single strand breaks or double strand breaks to DNA, there have been various studies to investigate the mechanisms of DNA damage by low-energy electrons. In this paper, we examined the possibility of using X-ray photoelectron spectroscopy (XPS) to analyze the dissociation patterns of the molecular bonds by electron irradiation on DNA thin films and tried to establish the method as a general tool for studying the radiation damage of biomolecules by low energ yelectrons. For the experiment, pBR322 plasmid DNA solution was formed into the films on tantalum plates by lyophilization and was irradiated by 5-eV electrons. Un-irradiated and irradiated DNA films were compared and analyzed using the XPS technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05b
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• pp.31-34
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by chemical and mechanical polishing(CMP) process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of sapphire crystalline wafer at surfaces has a full width at half maximum 89 arcses. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. Sapphire wafers's waveness has higher abrasion rate in the edge of the wafer than its center due to Newton's Ring interference.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.493-498
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• 1995

Ultrathin networks of itaconic acid copolymers and poly(allylamine) were produced by a Langmuir-Blodgett (LB) technique employing a double-chain amine as a monolayer template which was subsequently removed by extraction after thermal crosslinking. Itaconic acid copolymers used were copoly (itaconic acid-ethyl vinyl ether) and copoly (itaconic acid-n-butyl vinyl ether). The polyion-complexed monolayers of three components consisting of template amine, itaconic acid copolymer and poly (allylamine) were formed at the air-water interface. The Langmuir film properties have been studied by the surface pressure-area isotherm and fluorescence microscopy. The monolayers were transferred on solid substrates and were characterized by FT-IR spectroscopy, X-ray photoelectron spectroscopy, and scanning electron microscopy (SEM). Two-dimensional polymer networks were formed through imide or amide linkages by heat treatment under vacuum. The heat-treated films were extracted with chloroform after immersion in aq. sodium chloride to remove the template amines. SEM observation of a LB film on a porous fluorocarbon membrane filter with pore diameter of 0.1 μm showed covering of the pores by six layers in the polyion complex state.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.302-307
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• 1999

We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03 $\mu \textrm m$/min, respectively. The $I_2^U$ and $I_2^L$ peaks, which split by strain due to lattice mismatch between substrate and epilayer, were measured from the photoluminescence experiment. And we found that the residual impurities in ZnSe epilayer were concerned with Al or CI elements from the calculated binding energy of donor impurity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.1026-1029
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• 2001

Zinc films have been deposited onto various buffer layers, Al, Al-Cu, Ag and Ag-Al, by vacuum evaporation method in order to investigate the film microstructure and its consequence on the film growth. Zn films were grown onto Al buffer layers with faster rates than on Ag buffer layers, because of the presence of preferred growth orientation. Especially, in the Zn film formation on the Ag layers, intermetallic compounds AgZn was formed to cause the different growth orientation from Zn film obtained on the Al layers.

• Journal of the Korean Society for Precision Engineering
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• v.21 no.2
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• pp.218-223
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• 2004

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by Micro-lapping process. The sapphire crystalline wafers were characterized by double crystal X-ray diffraction. The sample quality of crystalline sapphire wafer at surface has a full width at half maximum of 250 arcsec. This value at the surface sapphire wafer surfaces indicated 0.12${mu}m$ sizes. Surfaces of sapphire wafers were mechanically affected by residual stress and surface default. As a result, the value of surface roughness of sapphire wafers measured by AFM(Atom Force Microscope) was 2.1nm.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2003.05a
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• pp.18-22
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• 2003

The sapphire wafers for blue light emitting devices were manufactured by the implementation of the surface machining technology based on micro-tribology. This process has been performed by grinding, lapping and polishing. The surfaces of sapphire wafers were mechanically affected by residual stress and surface default. This mechanical stress and strain can be cured by thermal anneal ing process. The sapphire crystalline wafers were annealed at $1100~1400^{\circ}C$ and then characterized by double crystal X-ray diffraction. The sample showed good quality of crystalline wafer surface wi th full width at hal f maximum of 16 arcsec for the 4-hour heat-treatment at $1300^{\circ}C$.

• Journal of radiological science and technology
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• v.12 no.1
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• pp.17-23
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• 1989

We have developed of the exposure technique for the chest radiography to get different contrast in left and right lung fields simultaneously for the effective diagnosis, I.E., get high contrast to detect tuberculosis, dispersal shadow or exudative lesions of early tuberculosis and get better sharpness and wider latitude to detect growing lesions of lung cancer or lesions overlapped with bones. As a result, by using an additional filter Cu 1.2mm with BX-III screen side and sheet of yellow cellophane on BF-III screen side at the conventional KV ($80KV{\sim}100KV$) for the chest X-ray, we can get similar densities in both left and right lung fields and, thus, this method is considered to be very effective for the quality diagnosis for the routine chest radiography.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.143-144
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• 2008

Single crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_2S_4$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_2S_4$ thin films measured with Hall effect by van der Pauw method are $8.51\times10^{17}$ electron/$cm^{-3}$, 291 $cm^2$/v-s at 293 K, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1996.05a
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• pp.72-75
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• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.